Abstract: A friction material including: a friction modifier: a binder: and a fiber base material, in which an alumina fiber is contained as the fiber base material, and a content of the alumina fiber is 0.1 mass % to 1.0 mass. The alumina fiber preferably includes Al2O3 and SiO2, and a chemical composition ratio of Al2O3 and SiO2 is preferably Al2O3:SiO2=70:30 to 80:20.

Abstract: A payment remittance support system according to one aspect includes an order placement terminal configured to provide contract information indicating a payment for and contents of a job for which an order is placed; an order reception terminal configured to provide completion information, which indicates completion of the job for which the order was accepted, such that the completion information is linked to the contract information; and a remittance unit configured to cause remittance processing for the payment indicated in the contract information linked to the completion information to be executed.

Abstract: A film thickness measurement apparatus includes a measurement light source which supplies measurement light containing wavelength components over a predetermined band to a semiconductor film, a spectroscopic optical system and a photodetector which detect intensities of output light formed by superimposing reflected light components from an upper surface and a lower surface of the semiconductor film at each time point by wavelength, and a film thickness analysis section which obtains a temporal change in film thickness of the semiconductor film. The film thickness analysis section obtains a value corresponding to a peak wavelength where the intensity of interfering light generated by the reflected light from the upper surface and the reflected light from the lower surface interfering with each other is maximized or minimized or an interval of the adjacent peak wavelengths based on spectral waveforms of the output light detected at mutually different time points.

Abstract: A film thickness measurement apparatus includes a measurement light source that supplies measurement light containing a measurement light component with a first wavelength and a measurement light component with a second wavelength to a measuring object, a spectroscopic optical system that decomposes interfering light of reflected light from the upper surface and reflected light from the lower surface of the measuring object into an interfering light component with the first wavelength and an interfering light component with the second wavelength, photodetectors that detect intensities of the first and second interfering light components at each time point, and a film thickness analysis section that obtains a temporal change in film thickness of the measuring object based on a phase difference between a first phase in a temporal change in detected intensity of the first interfering light component and a second phase in a temporal change in detected intensity of the second interfering light component.

Abstract: A spectroscopic measurement apparatus 1A comprises an integrating sphere 20 in which a sample S is located, a spectroscopic analyzer 30 dispersing the light to be measured from the sample S and obtaining a wavelength spectrum, and a data analyzer 50. The analyzer 50 includes an object range setting section which sets a first object range corresponding to excitation light and a second object range corresponding to light emission from the sample S in a wavelength spectrum, and a sample information analyzing section which determines a luminescence quantum yield of the sample S, determines a measurement value ?0 of the luminescence quantum yield from results of a reference measurement and a sample measurement, and determines, by using factors ?, ? regarding stray light in the reference measurement, an analysis value ? of the luminescence quantum yield with the effect of stray light reduced by ?=??0+?.

Abstract: A film thickness measurement apparatus 1A includes a measurement light source 28 which supplies measurement light containing wavelength components over a predetermined band to a semiconductor film 15, a spectroscopic optical system 30 and a photodetector 31 which detect intensities of output light formed by superimposing reflected light components from an upper surface and a lower surface of the semiconductor film 15 at each time point by wavelength, and a film thickness analysis section 40 which obtains a temporal change in film thickness d of the semiconductor film 15.

Abstract: A film thickness measurement apparatus 1A includes a measurement light source 28 that supplies measurement light containing a measurement light component with a first wavelength ?1 and a measurement light component with a second wavelength ?2 to a measuring object 15, a spectroscopic optical system 30 that decomposes interfering light of reflected light from the upper surface and reflected light from the lower surface of the measuring object 15 into an interfering light component with the first wavelength ?1 and an interfering light component with the second wavelength ?2, photodetectors 31 and 32 that detect intensities of the first and second interfering light components at each time point, and a film thickness analysis section 40.

Abstract: A spectroscopic measurement apparatus 1A comprises an integrating sphere 20 in which a sample S is located, a spectroscopic analyzer 30 dispersing the light to be measured from the sample S and obtaining a wavelength spectrum, and a data analyzer 50. The analyzer 50 includes an object range setting section which sets a first object range corresponding to excitation light and a second object range corresponding to light emission from the sample S in a wavelength spectrum, and a sample information analyzing section which determines a luminescence quantum yield of the sample S, determines a measurement value ?0 of the luminescence quantum yield from results of a reference measurement and a sample measurement, and determines, by using factors ?, ? regarding stray light in the reference measurement, an analysis value ? of the luminescence quantum yield with the effect of stray light reduced by ?=??0+?.

Abstract: A fluorescence correlation spectroscopy analyzer 1 is equipped with an excitation light illuminating optical system 21, a fluorescence imaging optical system 22, a CCD camera 15, and a data analyzer 16. The excitation light illuminating optical system 21 illuminates excitation light onto a predetermined region of a measured sample S. The fluorescence imaging optical system 22 images the fluorescence generated at the measured sample S onto the photodetection surface of the CCD camera 15. The CCD camera 15 performs photoelectric conversion of the fluorescence made incident onto the photodetection surface in accordance with the respective pixels and outputs the charges generated by the photoelectric conversion as detection signals from an output terminal. The data analyzer 16 inputs the detection signals based on the charges generated at the pixels, and computes autocorrelation functions of the input detection signals according to each pixel.

Abstract: A fluorescence correlation spectroscopy analyzer 1 is equipped with an excitation light illuminating optical system 21, a fluorescence imaging optical system 22, a CCD camera 15, and a data analyzer 16. The excitation light illuminating optical system 21 illuminates excitation light onto a predetermined region of a measured sample S. The fluorescence imaging optical system 22 images the fluorescence generated at the measured sample S onto the photodetection surface of the CCD camera 15. The CCD camera 15 performs photoelectric conversion of the fluorescence made incident onto the photodetection surface in accordance with the respective pixels and outputs the charges generated by the photoelectric conversion as detection signals from an output terminal.

Abstract: In a fluorescence measuring method and apparatus, a sample S is irradiated with pulsed pumping light supplied from a pumping light source. Fluorescence generated by the sample S is detected by a photodetector by way of a condensing optical system and a spectroscope. The fluorescence time waveform is subjected to a data analysis in a data processing unit in a controller. This computes waveform data and physical quantities such as fluorescence lifetime. The pumping light time waveform is fixedly arranged with respect to a time axis used for data analysis. Fitting calculations are carried out while moving the fluorescence time waveform and fitting range from an initial position earlier than a pumping light peak to a later end position, and optimal measurement waveform data is selected according to a predetermined selection criterion. Waveform data is thus computed accurately and efficiently regardless of fluctuations in the fluorescence time waveform.

Abstract: At each measurement time, measurement light is supplied from a measurement light source 11, and interference light obtained when reflected light from a semiconductor wafer W and reference light from a reference light generating section 14 are coupled is detected by a photodetector 15. A thickness calculating section 16 obtains a light intensity distribution representing the correlation between the light intensity of the interference light and the reference optical path length, selects a wafer upper surface peak and wafer lower surface peak from a plurality of light intensity peaks in the light intensity distribution using a predetermined selection criterion, and calculates the thickness of the semiconductor wafer W from the optical path length difference between the light intensity peaks.

Abstract: At each measurement time, reflected light from a semiconductor wafer W or the like by measurement light from a measurement light source 11 is coupled to reference light from a reference light generating section 14, and interference light is detected by a photodetector 15. A raw thickness value calculating section 16b selects two light intensity peaks corresponding to the upper and lower surfaces of the wafer W from a light intensity distribution between an interference light intensity and a reference optical path length and calculates a raw thickness value. A statistical thickness value calculating section 16c executes statistical processing including data sorting, determination whether the raw thickness value falls within an allowable numerical value range, and determination of a thickness change line, thereby obtaining a statistical thickness value.

Abstract: A sample S is irradiated with pulsed pumping light supplied from a pumping light source 1, fluorescence generated by the sample S is detected by a photodetector 5 by way of a condensing optical system 3 and a spectroscope 4, and the fluorescence time waveform is subjected to a data analysis in a data processing unit 62 in a controller 6, so as to compute waveform data and physical quantities such as fluorescence lifetime. Here, the pumping light time waveform is fixedly arranged with respect to a time axis used for the data analysis, a plurality of fitting calculations are carried out while moving the fluorescence time waveform and fitting range from an initial position earlier than a pumping light peak to a later end position, and optimal measurement waveform data is selected according to a predetermined selection criterion.

Abstract: At each measurement time, reflected light from a semiconductor wafer W or the like by measurement light from a measurement light source 11 is coupled to reference light from a reference light generating section 14, and interference light is detected by a photodetector 15. A raw thickness value calculating section 16b selects two light intensity peaks corresponding to the upper and lower surfaces of the wafer W from a light intensity distribution between an interference light intensity and a reference optical path length and calculates a raw thickness value. A statistical thickness value calculating section 16c executes statistical processing including data sorting, determination whether the raw thickness value falls within an allowable numerical value range, and determination of a thickness change line, thereby obtaining a statistical thickness value.

Abstract: At each measurement time, measurement light is supplied from a measurement light source 11, and interference light obtained when reflected light from a semiconductor wafer W and reference light from a reference light generating section 14 are coupled is detected by a photodetector 15. A thickness calculating section 16 obtains a light intensity distribution representing the correlation between the light intensity of the interference light and the reference optical path length, selects a wafer upper surface peak and wafer lower surface peak from a plurality of light intensity peaks in the light intensity distribution using a predetermined selection criterion, and calculates the thickness of the semiconductor wafer W from the optical path length difference between the light intensity peaks.

Abstract: A feeble light measuring device comprising a photon counting tube, an image detector and a signal processor. The photon counting tube includes a photocathode for generating an electron upon an incidence of light to be measured, an MCP for multiplying the photoelectron from the photocathode and a phosphor screen for converting the photoelectrons multiplied by the MCP into a light image such as luminous spots. The MCP is not saturated by an incidence of single photoelectron. Thus the spread of the luminous spot corresponding to the single photoelectron is very small. The image detector converts the light image from the photon counting tube to electric outputs the signal processor removes noise components of the electric outputs from the image detector to extract signal components of the electric outputs.

Abstract: A framing camera comprises a photocathode, a first deflection means for scanning electron beams emitted from the photocathode, a slit plate having a single slit for converting the electron beams with a spatial picture image information into electron beams with a picture image of temporal sequence and a second deflection means for scanning the electron beams passed from the slit plate to have them impinge upon a phosphor screeen to thereby produce a plurality of framed patterns, in which deflection voltages supplied to the first and second deflection means are adjustable independently of each other.

Abstract: Optical waveform observing apparatus including a sampling streak tube to which is applied an incident light beam having a waveform to be observed. An electron beam corresponding to the incident light beam is repetitively deflected in the streak tube, in response to a repetitive deflecting trigger signal, to sample the electron beam. The repetitive deflection of the electron beam is periodically stopped for a first time period. An integration circuit integrates data outputted by the streak tube. A subtraction circuit subtracts the integration of streak tube data outputted during the first time period from the integration of streak tube data outputted during a second time period when the repetitive beam deflection is not stopped, so that background noise and dark currents are not included in the subtraction result.