Patents by Inventor Mu-Chin Chen

Mu-Chin Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating conductive line of a semiconductor device
    Patent number: 9318381
    Abstract: A method of fabricating a conductive line of a semiconductor device is disclosed. The method includes the steps of: sequentially forming a conductive material layer and a mask on a semiconductor substrate, wherein a thickness of the conductive material layer is between 30000 angstroms (?) and 90000 angstrom (?); performing a first etching process to remove a part of the conductive material layer to form at least an upper side; and performing a second etching process to remove a part of the conductive material layer to form at least a lower side, wherein a curvature of the upper side is different from a curvature of the lower side.
    Type: Grant
    Filed: July 1, 2015
    Date of Patent: April 19, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Mu-Chin Chen, Yuan-Sheng Chiang, Chi-Sheng Hsiung
  • METHOD OF FABRICATING CONDUCTIVE LINE OF A SEMICONDUCTOR DEVICE
    Publication number: 20150303104
    Abstract: A method of fabricating a conductive line of a semiconductor device is disclosed. The method includes the steps of: sequentially forming a conductive material layer and a mask on a semiconductor substrate, wherein a thickness of the conductive material layer is between 30000 angstroms (?) and 90000 angstrom (?); performing a first etching process to remove a part of the conductive material layer to form at least an upper side; and performing a second etching process to remove a part of the conductive material layer to form at least a lower side, wherein a curvature of the upper side is different from a curvature of the lower side.
    Type: Application
    Filed: July 1, 2015
    Publication date: October 22, 2015
    Inventors: Mu-Chin Chen, Yuan-Sheng Chiang, Chi-Sheng Hsiung
  • Conductive line of semiconductor device
    Patent number: 9117820
    Abstract: A conductive line of a semiconductor device includes a conductive layer disposed on a semiconductor substrate. A thickness of the conductive layer is substantially larger than 10000 angstrom (?), and at least a side of the conductive layer has at least two different values of curvature.
    Type: Grant
    Filed: August 8, 2012
    Date of Patent: August 25, 2015
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Mu-Chin Chen, Yuan-Sheng Chiang, Chi-Sheng Hsiung
  • CONDUCTIVE LINE OF SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    Publication number: 20140042642
    Abstract: A conductive line of a semiconductor device includes a conductive layer disposed on a semiconductor substrate. A thickness of the conductive layer is substantially larger than 10000 angstrom (?), and at least a side of the conductive layer has at least two different values of curvature.
    Type: Application
    Filed: August 8, 2012
    Publication date: February 13, 2014
    Inventors: Mu-Chin Chen, Yuan-Sheng Chiang, Chi-Sheng Hsiung