Abstract: A semiconductor component that is designed as a trench MISFET. The semiconductor component includes a substrate made of gallium nitride (GaN), a drift layer situated thereon, a barrier layer, and a source region situated thereabove. The source region includes a gate trench that extends from the source region into the underlying barrier layer.

Abstract: A semiconductor component, in particular diode or transistor. The semiconductor component includes two electrodes configured vertically one above the other, a substrate (102) made of gallium nitride, and a shielding layer for forming a space charge zone for shielding of an electric field when the semiconductor component is connected in a blocking operation or reverse direction.

Abstract: A semiconductor element includes an enhancement-type transistor structure with a layer construction including a base substrate, a first semiconductor layer, and a second semiconductor layer, which are arranged one on top of the other along a first direction. The transistor structure further has a source electrode, a gate electrode, and a drain electrode, which are spaced apart from one another along a second direction that is transverse to the first direction. The first and second semiconductor layers are formed by different group III nitride materials, such that a 2D electron gas forms in a boundary region of the first and second semiconductor layers. The first and second semiconductor layers have holes in the region of the gate electrode, between which holes multiple fins including the group III nitride materials remain. The gate electrode has a plurality of gate fingers extending into the holes.

Abstract: A semiconductor element includes an enhancement-type transistor structure with a layer construction including a base substrate, a first semiconductor layer, and a second semiconductor layer, which are arranged one on top of the other along a first direction. The transistor structure further has a source electrode, a gate electrode, and a drain electrode, which are spaced apart from one another along a second direction that is transverse to the first direction. The first and second semiconductor layers are formed by different group III nitride materials, such that a 2D electron gas forms in a boundary region of the first and second semiconductor layers. The first and second semiconductor layers have holes in the region of the gate electrode, between which holes multiple fins including the group III nitride materials remain. The gate electrode has a plurality of gate fingers extending into the holes.