Patents by Inventor Muhammad Maksudur RAHMAN
Muhammad Maksudur RAHMAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11881492Abstract: Transistor structures for a transistor may include a first source-drain region, a second source-drain region, and a channel region between the first and second source-drain regions overlapped by a gate structure. Transistor structures may be formed in a well of a first doping type. Isolation structures having the first doping type may be formed within the well. A lightly doped implant region of a second doping type for each of the source-drain regions may be formed within the well and separated from the isolation structures. A heavily doped surface implant region of the first doping type may extend across the surface of the well and cover the lightly doped implant region of each source-drain region. The surface implant region may be formed by patterning or by a blanket implantation process across the transistor structures.Type: GrantFiled: January 13, 2022Date of Patent: January 23, 2024Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Robert Michael Guidash, Muhammad Maksudur Rahman
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Publication number: 20240006436Abstract: An image sensor, comprises a three-dimensional integrated circuit comprising a stack with at least a top-, a middle-, and a bottom-tier. The bottom-tier (BTR) comprises a first array of photodetectors, denoted first pixels (PD1), and the first pixels being sensitive in the visual and/or near-infrared spectral range. The middle-tier (MTR) comprises a second array of photodetectors, denoted second pixels (PD2), and the second pixels being sensitive in the short-wave infrared spectral range. The top-tier (TTR) comprises an application-specific integrated circuit, denoted ASIC, operable to read out the arrays of the first and second photodiodes (PD1, PD2).Type: ApplicationFiled: June 29, 2022Publication date: January 4, 2024Applicant: ams Sensors USA Inc.Inventors: Muhammad Maksudur RAHMAN, Ananth TAMMA, Stefano GUERRIERI
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Patent number: 11778343Abstract: An image sensor may include an array of image sensor pixels. Each pixel in the array may be a global shutter pixel having a first charge storage node configured to capture scenery information and a second charge storage node configured to capture background information generated as a result of parasitic light and dark noise signals. The first and/or second charge storage nodes may each be provided with an overflow charge storage to provide high dynamic range (HDR) functionality. The background information may be subtracted from the scenery information to cancel out the desired background signal contribution and to obtain an HDR signal with high global shutter efficiency. The charge storage nodes may be implemented as storage diode or storage gate devices. The pixels may be backside illuminated pixels with optical diffracting structures and multiple microlenses formed at the backside to distribute light equally between the two charge storage nodes.Type: GrantFiled: November 30, 2021Date of Patent: October 3, 2023Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Dajiang Yang, Sergey Velichko, Bartosz Piotr Banachowicz, Tomas Geurts, Muhammad Maksudur Rahman
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Publication number: 20230223412Abstract: Transistor structures for a transistor may include a first source-drain region, a second source-drain region, and a channel region between the first and second source-drain regions overlapped by a gate structure. Transistor structures may be formed in a well of a first doping type. Isolation structures having the first doping type may be formed within the well. A lightly doped implant region of a second doping type for each of the source-drain regions may be formed within the well and separated from the isolation structures. A heavily doped surface implant region of the first doping type may extend across the surface of the well and cover the lightly doped implant region of each source-drain region. The surface implant region may be formed by patterning or by a blanket implantation process across the transistor structures.Type: ApplicationFiled: January 13, 2022Publication date: July 13, 2023Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Robert Michael GUIDASH, Muhammad Maksudur RAHMAN
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Patent number: 11696048Abstract: A pixel arrangement comprises a photodiode, a circuit node, a transfer transistor coupled to the photodiode and to the circuit node, an amplifier with an input coupled to the circuit node, a first and a second capacitor, a first transistor coupled to an output of the amplifier and to the first capacitor, a second transistor coupled to the first transistor and to the second capacitor, and a coupling transistor coupled to the circuit node and to the second capacitor.Type: GrantFiled: March 31, 2022Date of Patent: July 4, 2023Assignee: ams Sensors USA Inc.Inventors: Muhammad Maksudur Rahman, Denver Lloyd, Scott Johnson, Adi Xhakoni
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Patent number: 11671719Abstract: A pixel arrangement comprises a photodiode, a circuit node, a transfer transistor coupled to the photodiode and to the circuit node, an amplifier with an input coupled to the circuit node, a first and a second capacitor, a first transistor coupled to an output of the amplifier and to the first capacitor, a second transistor coupled to the first transistor and to the second capacitor, and a coupling transistor coupled to the circuit node and to the second capacitor.Type: GrantFiled: March 31, 2022Date of Patent: June 6, 2023Assignee: ams Sensors USA Inc.Inventors: Muhammad Maksudur Rahman, Denver Lloyd, Scott Johnson, Adi Xhakoni
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Publication number: 20220086375Abstract: An image sensor may include an array of image sensor pixels. Each pixel in the array may be a global shutter pixel having a first charge storage node configured to capture scenery information and a second charge storage node configured to capture background information generated as a result of parasitic light and dark noise signals. The first and/or second charge storage nodes may each be provided with an overflow charge storage to provide high dynamic range (HDR) functionality. The background information may be subtracted from the scenery information to cancel out the desired background signal contribution and to obtain an HDR signal with high global shutter efficiency. The charge storage nodes may be implemented as storage diode or storage gate devices. The pixels may be backside illuminated pixels with optical diffracting structures and multiple microlenses formed at the backside to distribute light equally between the two charge storage nodes.Type: ApplicationFiled: November 30, 2021Publication date: March 17, 2022Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Dajiang YANG, Sergey VELICHKO, Bartosz Piotr BANACHOWICZ, Tomas GEURTS, Muhammad Maksudur RAHMAN
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Patent number: 11218653Abstract: An image sensor may include an array of image sensor pixels. Each pixel in the array may be a global shutter pixel having a first charge storage node configured to capture scenery information and a second charge storage node configured to capture background information generated as a result of parasitic light and dark noise signals. The first and/or second charge storage nodes may each be provided with an overflow charge storage to provide high dynamic range (HDR) functionality. The background information may be subtracted from the scenery information to cancel out the desired background signal contribution and to obtain an HDR signal with high global shutter efficiency. The charge storage nodes may be implemented as storage diode or storage gate devices. The pixels may be backside illuminated pixels with optical diffracting structures and multiple microlenses formed at the backside to distribute light equally between the two charge storage nodes.Type: GrantFiled: October 23, 2019Date of Patent: January 4, 2022Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Dajiang Yang, Sergey Velichko, Bartosz Piotr Banachowicz, Tomas Geurts, Muhammad Maksudur Rahman
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Publication number: 20210014438Abstract: An image sensor may include an array of image sensor pixels. Each pixel in the array may be a global shutter pixel having a first charge storage node configured to capture scenery information and a second charge storage node configured to capture background information generated as a result of parasitic light and dark noise signals. The first and/or second charge storage nodes may each be provided with an overflow charge storage to provide high dynamic range (HDR) functionality. The background information may be subtracted from the scenery information to cancel out the desired background signal contribution and to obtain an HDR signal with high global shutter efficiency. The charge storage nodes may be implemented as storage diode or storage gate devices. The pixels may be backside illuminated pixels with optical diffracting structures and multiple microlenses formed at the backside to distribute light equally between the two charge storage nodes.Type: ApplicationFiled: October 23, 2019Publication date: January 14, 2021Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Dajiang YANG, Sergey VELICHKO, Bartosz Piotr BANACHOWICZ, Tomas GEURTS, Muhammad Maksudur RAHMAN
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Patent number: 10002895Abstract: An image sensor pixel may include a photodiode, a floating diffusion, and a transfer gate. A buried channel may be formed under the transfer gate. The buried channel may extend from the floating diffusion to overlap a portion of the transfer gate without extending completely beneath the transfer gate or reaching the photodiode. The buried channel may provide a path for antiblooming current from the photodiode to reach the floating diffusion, while allowing for the transfer gate off voltage to remain high enough to prevent transfer gate dark current from flowing into the photodiode.Type: GrantFiled: October 14, 2016Date of Patent: June 19, 2018Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Daniel Tekleab, Muhammad Maksudur Rahman, Eric Gordon Stevens, Bartosz Piotr Banachowicz, Robert Michael Guidash, Vladimir Korobov
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Publication number: 20170358617Abstract: An image sensor pixel may include a photodiode, a floating diffusion, and a transfer gate. A buried channel may be formed under the transfer gate. The buried channel may extend from the floating diffusion to overlap a portion of the transfer gate without extending completely beneath the transfer gate or reaching the photodiode. The buried channel may provide a path for antiblooming current from the photodiode to reach the floating diffusion, while allowing for the transfer gate off voltage to remain high enough to prevent transfer gate dark current from flowing into the photodiode.Type: ApplicationFiled: October 14, 2016Publication date: December 14, 2017Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Daniel TEKLEAB, Muhammad Maksudur RAHMAN, Eric Gordon STEVENS, Bartosz Piotr BANACHOWICZ, Robert Michael GUIDASH, Vladimir KOROBOV