Patents by Inventor Mu-Kyung Jung

Mu-Kyung Jung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • INTEGRATED CIRCUIT CAPACITOR STRUCTURE
    Publication number: 20070072319
    Abstract: Embodiments of the invention include a MIM capacitor that has a high capacitance that can be manufactured without the problems that affected the prior art. Such a capacitor includes an upper electrode, a lower electrode, and a dielectric layer that is intermediate the upper and the lower electrodes. A first voltage can be applied to the upper electrode and a second voltage, which is different from the first voltage, can be applied to the lower electrode. A wire layer, through which the first voltage is applied to the upper electrode, is located in the same level as or in a lower level than the lower electrode.
    Type: Application
    Filed: November 13, 2006
    Publication date: March 29, 2007
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jeong-Hoon AHN, Kyungtae LEE, Mu-Kyung JUNG, Yong-Jun LEE
  • Integrated circuit capacitor structure
    Patent number: 7154162
    Abstract: Embodiments of the invention include a MIM capacitor that has a high capacitance that can be manufactured without the problems that affected the prior art. Such a capacitor includes an upper electrode, a lower electrode, and a dielectric layer that is intermediate the upper and the lower electrodes. A first voltage can be applied to the upper electrode and a second voltage, which is different from the first voltage, can be applied to the lower electrode. A wire layer, through which the first voltage is applied to the upper electrode, is located in the same level as or in a lower level than the lower electrode.
    Type: Grant
    Filed: October 3, 2003
    Date of Patent: December 26, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong-Hoon Ahn, Kyungtae Lee, Mu-Kyung Jung, Yong-Jun Lee
  • Integrated circuit capacitor structure
    Publication number: 20040075131
    Abstract: Embodiments of the invention include a MIM capacitor that has a high capacitance that can be manufactured without the problems that affected the prior art. Such a capacitor includes an upper electrode, a lower electrode, and a dielectric layer that is intermediate the upper and the lower electrodes. A first voltage can be applied to the upper electrode and a second voltage, which is different from the first voltage, can be applied to the lower electrode. A wire layer, through which the first voltage is applied to the upper electrode, is located in the same level as or in a lower level than the lower electrode.
    Type: Application
    Filed: October 3, 2003
    Publication date: April 22, 2004
    Inventors: Jeong-Hoon Ahn, Kyungtae Lee, Mu-Kyung Jung, Yong-Jun Lee