Abstract: The present invention relates to an optical data recording device using SIL (Solid Immersion Lens) in order to store information with high capacity, and more particularly to the multiple optical-recording apparatus capable of doing multiple information storage and play by forming multiple focus within the SIL. The present invention utilizes the optical technology by multiple source in order to overcome the limit of improving the recording speed and transfer rate due to the mechanical transfer and access, the flying head technology, which was proposed to increase the transfer rate and recording access speed in the near-field recording technology. The present invention can increase the recording speed and transfer rate using optical technology transcending the limit of mechanical transfer and access according to the number of the optical sources and focuses by recording and playing several pits simultaneously after forming multiple optical focus by multiple sources on the recording medium.

Abstract: A triode-type field emission device includes an insulating substrate; a cathode formed on the insulating substrate; a field emitter aligned on the cathode, wherein the field emitter includes a plurality of emitter tips and each emitter tip has the diameter of nanometers; an insulating layer positioned around the field emitter for electrically isolating the field emitter; and a gate electrode formed on the insulating layer, wherein the gate electrode is closed to an upper portion of the field emitter. Therefore, the triode-type field emission device may be operable in a low voltage.

Abstract: The present invention relates to an optical data recording device using SIL (Solid Immersion Lens) in order to store information with high capacity, and more particularly to the multiple optical-recording apparatus capable of doing multiple information storage and play by forming multiple focus within the SIL.

Abstract: A triode-type field emission device includes an insulating substrate; a cathode formed on the insulating substrate; a field emitter aligned on the cathode, wherein the field emitter includes a plurality of emitter tips and each emitter tip has the diameter of nanometers; an insulating layer positioned around the field emitter for electrically isolating the field emitter; and a gate electrode formed on the insulating layer, wherein the gate electrode is closed to an upper portion of the field emitter. Therefore, the triode-type field emission device may be operable in a low voltage.

Abstract: The present invention relates to a semiconductor device and, more particularly, to a short-wavelength optoelectronic device and a method for fabricating the same. The optoelectronic device according to the present invention doesn't have to employ an ion implantation process and an ohmic contact to make the n-p junction in the WB compound semiconductor, providing a sufficient efficiency for display. The method according to the present invention comprises the step of a) forming a SiC:AlN super lattice multilayer by alternately forming a SiC epitaxial film and an AlN epitaxial film on a substrate, wherein the AlN film is formed and the SiC film is formed using a single source gas of 1,3disilabutane in an nitrogen plasma-assisted metalorganic molecular beam epitaxy system; and b) applying a thermal treatment to the SiC:AlN super lattice multilayer, thereby a mixed crystal compound having (SiC).sub.x (AlN).sub.1-x quantum wells obtained by a diffusion of SiC film and AlN.

Abstract: The object of the present invention is to provide a RF induction plasma source generating apparatus which generates a stabilized plasma and sustains the stabilized plasma by maintaining the plasma pressure from several hundreds Torr to several thousands Torr with attachment a buffer nozzle cap, upper metallic blocking films and lower metallic blocking films to a nozzle cap, plasma tube and RF induction coils, respectively for separating the plasma source generating apparatus from the chamber.

Abstract: This invention discloses a method of manufacturing a diamond vacuum device, and more particularly a method of manufacturing a diamond vacuum device which uses a diamond thin film as an electron emitter by electric field. The present invention presents a method of manufacturing a vacuum device for use in high speed, high voltage, using diamond having a negative electron affinity, which can emit electrons even at a low voltage and is also resistant to chemical variations.