Patents by Inventor Mun Hooi Yaow

Mun Hooi Yaow has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11038033
    Abstract: The present subject matter relates to an integrated circuit. The integrated circuit includes a first metal layer and a second metal layer capacitively coupled to the first metal layer through a dielectric layer. Further, the second metal layer includes an electron leakage path to provide for leakage of charge from the second metal layer in a predetermined leak time period.
    Type: Grant
    Filed: April 30, 2014
    Date of Patent: June 15, 2021
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Reynaldo V Villavelez, Ning Ge, Mun Hooi Yaow, Erik D Ness, David B Novak
  • Patent number: 9914297
    Abstract: A fluid ejection device is described. In an example, a device includes a substrate having a chamber formed thereon to contain a fluid. A metal layer includes a resistor under the chamber having a surface thermally coupled to the chamber. At least one layer is deposited on the metal layer. A polysilicon layer is under the metal layer comprising a polysilicon structure under the resistor to change topography of the resistor such that the surface is uneven.
    Type: Grant
    Filed: May 12, 2017
    Date of Patent: March 13, 2018
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Ning Ge, Mun Hooi Yaow, Bee Ling Peh
  • Patent number: 9849672
    Abstract: An example provides a fluid ejection apparatus including a first firing resistor and a second firing resistor to selectively cause fluid to be ejected through a single nozzle, and a parasitic resistor arranged to add a parasitic resistance to the first firing resistor.
    Type: Grant
    Filed: April 3, 2014
    Date of Patent: December 26, 2017
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Ning Ge, Hang-Ru Goy, Boon Bing Ng, Shane O'Brien, Mun Hooi Yaow
  • Publication number: 20170246866
    Abstract: A fluid ejection device is described. In an example, a device includes a substrate having a chamber formed thereon to Ncontain a fluid. A metal layer includes a resistor under the chamber having a surface thermally coupled to the chamber. At least one layer is deposited on the metal layer. A polysilicon layer is under the metal layer comprising a polysilicon structure under the resistor to change topography of the resistor such that the surface is uneven.
    Type: Application
    Filed: May 12, 2017
    Publication date: August 31, 2017
    Inventors: Ning Ge, Mun Hooi Yaow, Bee Ling Peh
  • Patent number: 9676187
    Abstract: A fluid ejection device is described. In an example, a device includes a substrate having a chamber formed thereon to contain a fluid. A metal layer includes a resistor under the chamber having a surface thermally coupled to the chamber. At least one layer is deposited on the metal layer. A polysilicon layer is under the metal layer comprising a polysilicon structure under the resistor to change topography of the resistor such that the surface is uneven.
    Type: Grant
    Filed: July 29, 2013
    Date of Patent: June 13, 2017
    Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Ning Ge, Mun Hooi Yaow, Bee Ling Peh
  • Publication number: 20170151783
    Abstract: An example provides a fluid ejection apparatus including a first firing resistor and a second firing resistor to selectively cause fluid to be ejected through a single nozzle, and a parasitic resistor arranged to add a parasitic resistance to the first firing resistor.
    Type: Application
    Filed: April 3, 2014
    Publication date: June 1, 2017
    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Ning GE, Hang-Ru GOY, Boon Bing NG, Shane O'Brien, Mun Hooi Yaow
  • Publication number: 20170053993
    Abstract: The present subject matter relates to an integrated circuit. The integrated circuit includes a first metal layer and a second metal layer capacitively coupled to the first metal layer through a dielectric layer. Further, the second metal layer includes an electron leakage path to provide for leakage of charge from the second metal layer in a predetermined leak time period.
    Type: Application
    Filed: April 30, 2014
    Publication date: February 23, 2017
    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Reynaldo V Villavelez, Ning GE, Mun Hooi YAOW, Erik D Ness, David B Novak
  • Publication number: 20160114580
    Abstract: A fluid ejection device is described. In an example, a device includes a substrate having a chamber formed thereon to contain a fluid. A metal layer includes a resistor under the chamber having a surface thermally coupled to the chamber. At least one layer is deposited on the metal layer. A polysilicon layer is under the metal layer comprising a polysilicon structure under the resistor to change topography of the resistor such that the surface is uneven.
    Type: Application
    Filed: July 29, 2013
    Publication date: April 28, 2016
    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Ning Ge, Mun Hooi Yaow, Bee Ling Peh