Patents by Inventor Mun-Young Lee
Mun-Young Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240166515Abstract: Disclosed is a method of producing lithium sulfide (Li2S) without using hydrogen sulfide (H2S) gas. Particularly, the method of producing lithium sulfide (Li2S) includes preparing a starting material including a metal oxide by subjecting a mixed powder including an inorganic compound containing lithium and oxygen, a metal reducing agent, and sulfur (S) to synthesis reaction using mechanical force, preparing a mixed solution by mixing the starting material and a solvent, and obtaining a lithium sulfide (Li2S) powder by removing the metal oxide from the mixed solution and then performing drying.Type: ApplicationFiled: November 8, 2023Publication date: May 23, 2024Inventors: MUN SEOK CHAE, Hong Seok Min, Sang Heon Lee, Sang Soo Lee, Ho Cheol Shin, Wo Dum Jung, In Woo Song, So Young Kim, Young Whan Cho
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Publication number: 20240083851Abstract: The present invention relates to a novel lappaconitine derivative and a pharmaceutically acceptable salt thereof, a preparation method therefor, and a medical use thereof using osteogenesis-promoting activity. The lappaconitine derivative induces the differentiation of stem cells into preosteoblasts, and increases bone density when administered to an osteoporosis animal model, and induces osteogenesis, and thus can be effectively used for preventing, alleviating, or treating bone-related diseases such as osteoporosis.Type: ApplicationFiled: March 5, 2021Publication date: March 14, 2024Applicant: QGENETICS CO., LTD.Inventors: Mun Seog CHANG, Tae Hee LEE, Ha Young KIM, Jung Bin MIN
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Publication number: 20240083850Abstract: The present invention pertains to a novel lappaconitine derivative, a method for producing same, and a pharmaceutical use thereof using osteogenesis-promoting activity. The lappaconitine derivative induces the differentiation of stem cells into osteoblasts, increases bone mineral density when administered to animal models of osteoporosis, and induces bone formation in animal models of bone fracture, and thus can be advantageously used for preventing, ameliorating, or treating bone-related diseases such as osteoporosis, as well as treating non-disease fractures caused by physical trauma.Type: ApplicationFiled: March 5, 2021Publication date: March 14, 2024Applicant: QGENETICS CO., LTD.Inventors: Mun Seog CHANG, Tae Hee LEE, Ha Young KIM, Jung Bin MIN
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Patent number: 11709880Abstract: Provided is a method of image searching based on artificial intelligence (AI), the method including acquiring retrieved information, which includes at least one of a retrieved image and an image address, and a user query on the basis of a search result of an image search engine, detecting a keyword-category combination on the basis of a type of the acquired user query, determining whether cache data that matches the detected keyword-category combination exists, generating, in response to absence of the cache data that matches the keyword-category combination, an object-category combination through an AI technology based object detection on the acquired retrieved information.Type: GrantFiled: January 29, 2021Date of Patent: July 25, 2023Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Mun Young Lee, Mi Gyeong Yang, Seung Hun Jeong
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Patent number: 11705482Abstract: A metal-insulator-metal (MIM) capacitor includes a first group of metal contacts disposed on a first region of an isolation layer spaced apart from each other in a first direction, a second group of metal contacts disposed on a second region of the isolation layer spaced apart from each other in the first direction, a dielectric layer disposed between the first group of metal contacts and the second group of metal contacts, a first metal electrode disposed to contact the top surfaces of the first group of metal contacts, and a second metal electrode disposed to contact the top surfaces of the second group of metal contacts.Type: GrantFiled: December 23, 2022Date of Patent: July 18, 2023Assignee: SK Hynix system ic Inc.Inventors: Kyung Wook Kwon, Mun Young Lee, Myoung Kyun Choi
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Publication number: 20230129912Abstract: A metal-insulator-metal (MIM) capacitor includes a first group of metal contacts disposed on a first region of an isolation layer spaced apart from each other in a first direction, a second group of metal contacts disposed on a second region of the isolation layer spaced apart from each other in the first direction, a dielectric layer disposed between the first group of metal contacts and the second group of metal contacts, a first metal electrode disposed to contact the top surfaces of the first group of metal contacts, and a second metal electrode disposed to contact the top surfaces of the second group of metal contacts.Type: ApplicationFiled: December 23, 2022Publication date: April 27, 2023Inventors: Kyung Wook KWON, Mun Young LEE, Myoung Kyun CHOI
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Patent number: 11569343Abstract: A metal-insulator-metal (MIM) capacitor includes a first group of metal contacts disposed on a first region of an isolation layer spaced apart from each other in a first direction, a second group of metal contacts disposed on a second region of the isolation layer spaced apart from each other in the first direction, a dielectric layer disposed between the first group of metal contacts and the second group of metal contacts, a first metal electrode disposed to contact the top surfaces of the first group of metal contacts, and a second metal electrode disposed to contact the top surfaces of the second group of metal contacts.Type: GrantFiled: January 6, 2021Date of Patent: January 31, 2023Assignee: SK HYNIX SYSTEM IC INC.Inventors: Kyung Wook Kwon, Mun Young Lee, Myoung Kyun Choi
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Publication number: 20210384293Abstract: A metal-insulator-metal (MIM) capacitor includes a first group of metal contacts disposed on a first region of an isolation layer spaced apart from each other in a first direction, a second group of metal contacts disposed on a second region of the isolation layer spaced apart from each other in the first direction, a dielectric layer disposed between the first group of metal contacts and the second group of metal contacts, a first metal electrode disposed to contact the top surfaces of the first group of metal contacts, and a second metal electrode disposed to contact the top surfaces of the second group of metal contacts.Type: ApplicationFiled: January 6, 2021Publication date: December 9, 2021Inventors: Kyung Wook KWON, Mun Young LEE, Myoung Kyun CHOI
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Publication number: 20210240758Abstract: Provided is a method of image searching based on artificial intelligence (AI), the method including acquiring retrieved information, which includes at least one of a retrieved image and an image address, and a user query on the basis of a search result of an image search engine, detecting a keyword-category combination on the basis of a type of the acquired user query, determining whether cache data that matches the detected keyword-category combination exists, generating, in response to absence of the cache data that matches the keyword-category combination, an object-category combination through an AI technology based object detection on the acquired retrieved information.Type: ApplicationFiled: January 29, 2021Publication date: August 5, 2021Applicant: Electronics and Telecommunications Research InstituteInventors: Mun Young LEE, Mi Gyeong YANG, Seung Hun JEONG
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Patent number: 7981783Abstract: A semiconductor device including at least one drift region formed near a channel region on a substrate, a first buried insulating layer formed in the drift region, and a first reduced surface field region interposed between the first buried insulating layer and the drift region. Accordingly, the semiconductor device provides first reduced surface field regions arranged between drift regions and first buried insulating layers, thus having advantages of improved junction integrity, suitability for LDMOS transistors employing a high operation voltage and reduced total size.Type: GrantFiled: May 6, 2008Date of Patent: July 19, 2011Assignee: Dongbu HiTek Co., Ltd.Inventor: Mun-Young Lee
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Publication number: 20090166764Abstract: A transistor and fabricating method thereof includes sequentially forming a gate oxide layer and a poly gate over an active area of a semiconductor substrate, forming a drift region in the active area adjacent to the poly gate, and then forming a source/drain by simultaneously implanting impurity ions of various types into the drift region at a lower depth profile than that of the drift region.Type: ApplicationFiled: December 28, 2008Publication date: July 2, 2009Inventor: Mun-Young Lee
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Publication number: 20090166765Abstract: A MOS transistor and a method for manufacturing the transistor that may include forming a gate pattern on and/or over an active area of a semiconductor substrate defined as the active area and a field area, and silicide blocking films at each side of the gate pattern and partially over the uppermost surface of the gate pattern the silicide blocking films including first and second silicide blocking film portions formed spaced apart and extending in parallel to each other, and third and fourth silicide blocking film portions connected to the first and second silicide blocking film portions and formed spaced apart and extending in parallel to each other and perpendicular to the first and second silicide blocking film portions. With such a structural design, a high voltage transistor and middle voltage transistor having a reduced pitch size may be formed, thereby reducing the overall chip size.Type: ApplicationFiled: December 28, 2008Publication date: July 2, 2009Inventor: Mun-Young Lee
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Publication number: 20080290411Abstract: A semiconductor device including at least one drift region formed near a channel region on a substrate, a first buried insulating layer formed in the drift region, and a first reduced surface field region interposed between the first buried insulating layer and the drift region. Accordingly, the semiconductor device provides first reduced surface field regions arranged between drift regions and first buried insulating layers, thus having advantages of improved junction integrity, suitability for LDMOS transistors employing a high operation voltage and reduced total size.Type: ApplicationFiled: May 6, 2008Publication date: November 27, 2008Inventor: Mun-Young Lee