Abstract: A semiconductor device capable of charging that is less likely to cause deterioration of a power storage device is provided. The amount of a charging current is adjusted in accordance with the ambient temperature. Charging under low-temperature environments is performed with a reduced charging current. When the ambient temperature is too low or too high, the charging is stopped. Measurement of the ambient temperature is performed with a memory element using an oxide semiconductor. The use of a memory element using an oxide semiconductor enables measurement of the ambient temperature and retention of the temperature information to be performed at the same time.

Abstract: A high-resolution display device in which delay of input signals to pixels is reduced is provided. In the display device, a first layer, a second layer, and a third layer are formed in this order from the bottom. The first layer includes a driver circuit and a plurality of first wirings, the second layer includes a plurality of first contact portions, and the third layer includes a pixel array and a plurality of second wirings. The pixel array includes a plurality of pixel circuits. The plurality of second wirings are parallel to each other and extended in the column direction of the pixel array, and the plurality of pixel circuits are electrically connected to the plurality of second wirings. The driver circuit includes a plurality of output terminals positioned along a first direction. The plurality of first wirings are extended perpendicular to the first direction, and the plurality of output terminals are electrically connected to the plurality of first wirings.

Abstract: A battery protection circuit with a novel configuration and a power storage device including the battery protection circuit are provided. The battery protection circuit includes a switch circuit for controlling charge and discharge of a battery cell; the switch circuit includes a mechanical relay, a first transistor, and a second transistor; the switch circuit has a function of controlling electrical connection between a first terminal and a second terminal; the mechanical relay has a function of breaking electrical connection between the first terminal and the second terminal; the first transistor has a function of supplying first current between the first terminal and the second terminal; the second transistor has a function of supplying second current between the first terminal and the second terminal; and the first current is higher than the second current.

Abstract: A semiconductor device having a novel structure is provided. The semiconductor device includes a CPU and an accelerator. The accelerator includes a first memory circuit and an arithmetic circuit. The first memory circuit includes a first transistor. The first transistor includes a semiconductor layer containing a metal oxide in a channel formation region. The arithmetic circuit includes a second transistor. The second transistor includes a semiconductor layer containing silicon in a channel formation region. The first transistor and the second transistor are provided to be stacked. The CPU includes a CPU core including a flip-flop provided with a backup circuit. The backup circuit includes a third transistor. The third transistor includes a semiconductor layer containing a metal oxide in a channel formation region.

Abstract: A semiconductor device resistant to a high temperature with low power consumption is provided. The semiconductor device includes a first and a second circuit, a first and a second cell, and a first and a second wiring. The first cell includes a first transistor, and the second cell includes a second transistor. The first and the second transistor operate in a subthreshold region. The first cell is electrically connected to the first circuit through the first wiring, the first cell is electrically connected to the second circuit through the second wiring, and the second cell is electrically connected to the second circuit through the second wiring. The first cell sets a current flowing through the first transistor to a first current and the second cell sets a current flowing through the second transistor to a second current. At this time, a potential corresponding to the second current is input from the second wiring to the first cell.

Abstract: In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.

Abstract: A semiconductor device with a novel structure is provided. The semiconductor device includes a digital calculator, an analog calculator, a first memory circuit, and a second memory circuit. The analog calculator, the first memory circuit, and the second memory circuit each include a transistor including an oxide semiconductor in a channel formation region. The first memory circuit has a function of supplying first weight data to the digital calculator as digital data. The digital calculator has a function of performing product-sum operation using the first weight data. The second memory circuit has a function of supplying second weight data to the analog calculator as analog data. The analog calculator has a function of performing product-sum operation using the second weight data.

Abstract: A novel comparison circuit, a novel amplifier circuit, a novel battery control circuit, a novel battery protection circuit, a power storage device, a semiconductor device, an electric device, and the like are provided. In a semiconductor device, one of a source and a drain of a first transistor is electrically connected to one of a source and a drain of a second transistor and one of a source and a drain of a third transistor; the other of the source and the drain of the third transistor is electrically connected to a first output terminal; and the other of the source and the drain of the second transistor is electrically connected to a second output terminal.

Abstract: Rapid degradation an off-leakage current in an overdischarged state is prevented. In order to prevent an overdischarged state, a control circuit with low leakage current includes a transistor using an oxide semiconductor, whereby the characteristics of the secondary battery are retained. In addition, a system in which a control signal generation circuit is also integrated is formed. With this system structure, the control circuit enters a low-power consumption mode in accordance with the circuit operation after an overdischarge is detected. When recovering from an overdischarged state, the control circuit enters a normally-operating mode in accordance with the voltage increase when charging is started.

Abstract: A semiconductor device with a small circuit area and low power consumption is provided. The semiconductor device includes first to fourth cells, a current mirror circuit, and first to fourth wirings, and the first to fourth cells each include a first transistor, a second transistor, and a capacitor. In each of the first to fourth cells, a first terminal of the first transistor is electrically connected to a first terminal of the capacitor and a gate of the second transistor. The first wiring is electrically connected to first terminals of the second transistors in the first cell and the second cell, the second wiring is electrically connected to first terminals of the second transistors in the third cell and the fourth cell, the third wiring is electrically connected to second terminals of the capacitors in the first cell and the third cell, and the fourth wiring is electrically connected to second terminals of the capacitors in the second cell and the fourth cell.

Abstract: A semiconductor device is provided; the semiconductor device includes unipolar transistors. A steady-state current does not flow in the semiconductor device. The semiconductor device uses a high-level potential and a low-level potential to express a high level and a low level, respectively. The semiconductor device includes unipolar transistors, a capacitor, first and second input terminals, and an output terminal. To the second input terminal, a signal is input whose logic is inverted from the logic of a signal input to the first input terminal. The semiconductor device has a circuit structure called bootstrap in which two unipolar transistors are connected in series between the high-level potential and the low-level potential and a capacitor is provided between an output terminal and a gate of one of the two transistors. A delay is caused between the gate of the transistor and the signal output from the output terminal, whereby the bootstrap can be certainly performed.

Abstract: A semiconductor device with a novel structure is provided. A first memory circuit portion includes a first memory circuit for retaining a plurality of pieces of first weight data. A second memory circuit portion includes a second memory circuit for retaining a plurality of pieces of second weight data. A first arithmetic circuit portion includes a first arithmetic circuit, a first switching circuit, and a third switching circuit. A second arithmetic circuit portion includes a second arithmetic circuit, a second switching circuit, and a fourth switching circuit. The first switching circuit has a function of supplying any one of the plurality of pieces of the first weight data to a first wiring. The second switching circuit has a function of supplying any one of the plurality of pieces of the second weight data to a second wiring.

Abstract: In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.

Abstract: A semiconductor device with a novel structure is provided. The semiconductor device includes a storage circuit, an arithmetic circuit, and a driver circuit. The arithmetic circuit includes a switching circuit and a product-sum operation circuit. The storage circuit includes a first storage region and a second storage region. The first storage region has a function of retaining first storage data. The second storage region has a function of retaining second storage data. The switching circuit has a function of outputting the first storage data or the second storage data to the product-sum operation circuit. The driver circuit has a function of outputting first input data or second input data to the product-sum operation circuit. The product-sum operation circuit has a function of retaining first output data obtained by arithmetic processing performed on the first input data and the first storage data selected by the switching circuit.

Abstract: A semiconductor device capable of performing product-sum operation with high layout flexibility is provided. In the semiconductor device, a first layer, a second layer, and a third layer are formed in this order. The first layer includes a first cell, a first circuit, a first wiring, and a second wiring adjacent to the first wiring. The second layer includes a third wiring and a fourth wiring adjacent to the third wiring. The third layer includes an electrode and a sensor. The first circuit includes a switch. The sensor is electrically connected to the third wiring through the electrode and a first plug, a first terminal of the switch is electrically connected to the third wiring through a second plug, and a second terminal of the switch is electrically connected to the first cell through the first wiring. The electrode includes a region overlapping with the sensor and a region overlapping with the first plug.

Abstract: A semiconductor device with a novel structure is provided. The semiconductor device includes a plurality of memory circuits, a switching circuit, a first arithmetic circuit, and a second arithmetic circuit. The plurality of memory circuits each have a function of retaining weight data. The switching circuit has a function of switching electrical continuity and discontinuity between any one of the memory circuits and the first arithmetic circuit. The first arithmetic circuit outputs a first output signal based on product-sum operation processing of input data and the weight data selected by the switching circuit to the second arithmetic circuit. A layer including the plurality of memory circuits is provided to be stacked over a layer including the switching circuit, the first arithmetic circuit, and the second arithmetic circuit.

Abstract: A semiconductor device with a novel structure is provided. The semiconductor device includes a plurality of arithmetic blocks each including an arithmetic circuit portion and a memory circuit portion. The arithmetic circuit portion and the memory circuit portion are electrically connected to each other. The arithmetic circuit portion and the memory circuit portion have an overlap region. The arithmetic circuit portion includes, for example, a Si transistor, and the memory circuit portion includes, for example, an OS transistor. The arithmetic circuit portion has a function of performing product-sum operation. The memory circuit portion has a function of retaining weight data. A first driver circuit has a function of writing the weight data to the memory circuit portion. The weight data is written to all the memory circuit portions included in the same column with the use of the first driver circuit.

Abstract: A semiconductor device with reduced power consumption that can perform a product-sum operation is provided. The semiconductor device includes first and second circuits, and the second circuit includes first and second switches, a current/voltage converter circuit, and a first transistor. The first circuit is electrically connected to a first terminal of the second circuit; a first terminal of the first switch is electrically connected to the first terminal of the second circuit; a second terminal of the first switch is electrically connected to an input terminal of the current/voltage converter circuit; an output terminal of the current/voltage converter circuit is electrically connected to a first terminal of the first transistor; a second terminal of the first transistor is electrically connected to a first terminal of the second switch; and a second terminal of the second switch is electrically connected to a second terminal of the second circuit.

Abstract: A semiconductor device with a novel structure is provided. A plurality of memory circuits, a switching circuit, and an arithmetic circuit are included. Each of the plurality of memory circuits has a function of retaining weight data and a function of outputting the weight data to a first wiring. The switching circuit has a function of switching a conduction state between any one of the plurality of first wirings and a second wiring. The arithmetic circuit has a function of performing arithmetic processing using input data and the weight data supplied to the second wiring. The memory circuits are provided in a first layer. The switching circuit and the arithmetic circuit are provided in a second layer. The first layer is provided in a layer different from the second layer.

Abstract: A semiconductor device that has low power consumption and is capable of performing arithmetic operation is provided. The semiconductor device includes first to third circuits and first and second cells. The first cell includes a first transistor, and the second cell includes a second transistor. The first and second transistors operate in a subthreshold region. The first cell is electrically connected to the first circuit, the first cell is electrically connected to the second and third circuits, and the second cell is electrically connected to the second and third circuits. The first cell sets current flowing from the first circuit to the first transistor to a first current, and the second cell sets current flowing from the second circuit to the second transistor to a second current. At this time, a potential corresponding to the second current is input to the first cell.