Patents by Inventor Munehiro Oota
Munehiro Oota has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10155886Abstract: A polishing liquid for CMP, comprising: an abrasive grain including a cerium-based compound; a 4-pyrone-based compound; a polymer compound having an aromatic ring and a polyoxyalkylene chain; a cationic polymer; and water.Type: GrantFiled: April 28, 2014Date of Patent: December 18, 2018Assignee: HITACHI CHEMICAL COMPANY, LTD.Inventors: Munehiro Oota, Toshio Takizawa, Hisataka Minami, Toshiaki Akutsu, Tomohiro Iwano
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Patent number: 9966269Abstract: One embodiment of the present invention relates to a polishing liquid for CMP containing cerium oxide particles and water, wherein the half-value width of the main peak appearing within a range from 2?=27.000 to 29.980° in a powder X-ray diffraction chart of the cerium oxide particles is from 0.26 to 0.36°, the average particle size of the cerium oxide particles is at least 130 nm but less than 175 nm, and the number of cerium oxide particles having a particle size of 1.15 ?m or greater is 5000×103/mL or less.Type: GrantFiled: May 29, 2015Date of Patent: May 8, 2018Assignee: HITACHI CHEMICAL COMPANY, LTD.Inventors: Shigeru Yoshikawa, Munehiro Oota, Takaaki Tanaka, Takashi Shinoda
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Publication number: 20170210958Abstract: A CMP polishing liquid for polishing an insulating material, comprising a cerium oxide particle satisfying the conditions (A) and (B) below, a 4-pyrone-based compound, and water: condition (A): an average particle diameter R of the cerium oxide particle is 50 nm or more and 300 nm or less, and condition (B): when the cerium oxide particle is defined as a spherical particle having the average particle diameter R, sphericity S2/S1 provided by a specific surface area S1 of the spherical particle and a specific surface area S2 of the cerium oxide particle measured by the BET method is 3.15 or less.Type: ApplicationFiled: July 3, 2015Publication date: July 27, 2017Inventors: Takashi SHINODA, Munehiro OOTA, Nao YAMAMURA, Aiko KINO
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Publication number: 20170200617Abstract: One embodiment of the present invention relates to a polishing liquid for CMP containing cerium oxide particles and water, wherein the half-value width of the main peak appearing within a range from 2?=27.000 to 29.980° in a powder X-ray diffraction chart of the cerium oxide particles is from 0.26 to 0.36°, the average particle size of the cerium oxide particles is at least 130 nm but less than 175 nm, and the number of cerium oxide particles having a particle size of 1.15 ?m or greater is 5000×103/mL or less.Type: ApplicationFiled: May 29, 2015Publication date: July 13, 2017Inventors: Shigeru YOSHIKAWA, Munehiro OOTA, Takaaki TANAKA, Takashi SHINODA
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Publication number: 20170133237Abstract: Provided is a polishing liquid including cerium oxide particles, an organic acid A, a polymer compound B having a carboxyl acid group or a carboxylate group, and water, wherein the organic acid A has at least one group selected from the group consisting of —COOM group, -Ph-OM group, —SO3M group and —PO3M2 group, pKa of the organic acid A is less than 9, a content of the organic acid A is 0.001 to 1 mass % with respect to the total mass of the polishing liquid, and a content of the polymer compound B is 0.01 to 0.50 mass % with respect to the total mass of the polishing liquid, and pH is in the range of 4.0 to 7.0.Type: ApplicationFiled: December 1, 2016Publication date: May 11, 2017Inventors: Munehiro Oota, Takaaki Tanaka, Toshio Takizawa, Shigeru Yoshikawa, Takaaki Matsumoto, Takahiro Yoshikawa, Takashi Shinoda
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Patent number: 9564337Abstract: Provided is a polishing liquid including cerium oxide particles, an organic acid A, a polymer compound B having a carboxyl acid group or a carboxylate group, and water, wherein the organic acid A has at least one group selected from the group consisting of —COOM group, -Ph-OM group, —SO3M group and —PO3M2 group, pKa of the organic acid A is less than 9, a content of the organic acid A is 0.001 to 1 mass % with respect to the total mass of the polishing liquid, and a content of the polymer compound B is 0.01 to 0.50 mass % with respect to the total mass of the polishing liquid, and pH is in the range of 4.0 to 7.0.Type: GrantFiled: December 22, 2011Date of Patent: February 7, 2017Assignee: HITACHI CHEMICAL CO., LTD.Inventors: Munehiro Oota, Takaaki Tanaka, Toshio Takizawa, Shigeru Yoshikawa, Takaaki Matsumoto, Takahiro Yoshikawa, Takashi Shinoda
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Publication number: 20160137881Abstract: A polishing liquid for CMP, comprising: an abrasive grain including a cerium-based compound; a 4-pyrone-based compound; a polymer compound having an aromatic ring and a polyoxyalkylene chain; a cationic polymer; and water.Type: ApplicationFiled: April 28, 2014Publication date: May 19, 2016Inventors: Munehiro OOTA, Toshio TAKIZAWA, Hisataka MINAMI, Toshiaki AKUTSU, Tomohiro IWANO
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Patent number: 9022834Abstract: The polishing solution for CMP according to the invention comprises abrasive grains, an additive and water, and the polishing solution comprises an organic compound satisfying specified conditions as the additive. The polishing method of the invention is for polishing of a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.Type: GrantFiled: June 10, 2011Date of Patent: May 5, 2015Assignee: Hitachi Chemical Company, Ltd.Inventors: Eiichi Satou, Munehiro Oota, Kanshi Chinone, Shigeru Nobe, Kazuhiro Enomoto, Tadahiro Kimura, Masato Fukasawa, Masanobu Habiro, Yousuke Hoshi
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Patent number: 8853082Abstract: An object of the present invention is to provide a polishing liquid for CMP with which polishing scratches can be reduced and a sufficiently high polishing rate can be obtained in a CMP step for an ILD film, aggregation of an abrasive grain is difficult to occur, and high flatness is obtained, and provide a polishing method using the same. The polishing liquid for CMP according to the present invention is a polishing liquid for CMP containing an abrasive grain, an additive, and water, wherein the abrasive grain comprises a cerium-based particle, and the additive comprises a 4-pyrone-based compound and at least one of a nonionic surfactant or a cationic surfactant: [wherein X11, X12, and X13 each independently represent a hydrogen atom or a monovalent substituent].Type: GrantFiled: December 24, 2010Date of Patent: October 7, 2014Assignee: Hitachi Chemical Company, Ltd.Inventors: Masayuki Hanano, Eiichi Satou, Munehiro Oota, Kanshi Chinone
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Patent number: 8592317Abstract: The polishing solution for CMP of the invention comprises abrasive grains, a first additive and water, wherein the first additive is at least 1,2-benzoisothiazole-3(2H)-one or 2-aminothiazole. The polishing method of the invention is a polishing method for a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.Type: GrantFiled: May 6, 2011Date of Patent: November 26, 2013Assignee: Hitachi Chemical Co., Ltd.Inventors: Eiichi Satou, Shigeru Nobe, Munehiro Oota, Masayuki Hanano, Shigeru Yoshikawa
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Publication number: 20130260558Abstract: Provided is a polishing liquid including cerium oxide particles, an organic acid A, a polymer compound B having a carboxyl acid group or a carboxylate group, and water, wherein the organic acid A has at least one group selected from the group consisting of —COOM group, -Ph-OM group, —SO3M group and —PO3M2 group, pKa of the organic acid A is less than 9, a content of the organic acid A is 0.001 to 1 mass % with respect to the total mass of the polishing liquid, and a content of the polymer compound B is 0.01 to 0.50 mass % with respect to the total mass of the polishing liquid, and pH is in the range of 4.0 to 7.0.Type: ApplicationFiled: December 22, 2011Publication date: October 3, 2013Applicant: HITACHI CHEMICAL CO., LTD.Inventors: Munehiro Oota, Takaaki Tanaka, Toshio Takizawa, Shigeru Yoshikawa, Takaaki Matsumoto, Takahiro Yoshikawa, Takashi Shinoda
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Publication number: 20120315763Abstract: An object of the present invention is to provide a polishing liquid for CMP with which polishing scratches can be reduced and a sufficiently high polishing rate can be obtained in a CMP step for an ILD film, aggregation of an abrasive grain is difficult to occur, and high flatness is obtained, and provide a polishing method using the same. The polishing liquid for CMP according to the present invention is a polishing liquid for CMP containing an abrasive grain, an additive, and water, wherein the abrasive grain comprises a cerium-based particle, and the additive comprises a 4-pyrone-based compound and at least one of a nonionic surfactant or a cationic surfactant: [wherein X11, X12, and X13 each independently represent a hydrogen atom or a monovalent substituent.Type: ApplicationFiled: December 24, 2010Publication date: December 13, 2012Applicant: HITACHI CHEMICAL COMPANY, LTD.Inventors: Masayuki Hanano, Eiichi Satou, Munehiro Oota, Kanshi Chinone
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Publication number: 20110275285Abstract: The polishing solution for CMP according to the invention comprises abrasive grains, an additive and water, and the polishing solution comprises an organic compound satisfying specified conditions as the additive. The polishing method of the invention is for polishing of a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.Type: ApplicationFiled: June 10, 2011Publication date: November 10, 2011Applicant: HITACHI CHEMICAL COMPANY, LTD.Inventors: Eiichi Satou, Munehiro Oota, Kanshi Chinone, Shigeru Nobe, Kazuhiro Enomoto, Tadahiro Kimura, Masato Fukasawa, Masanobu Habiro, Yousuke Hoshi
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Publication number: 20110275217Abstract: The polishing solution for CMP of the invention comprises abrasive grains, a first additive and water, wherein the first additive is at least 1,2-benzoisothiazole-3(2H)-one or 2-aminothiazole. The polishing method of the invention is a polishing method for a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.Type: ApplicationFiled: May 6, 2011Publication date: November 10, 2011Applicant: HITACHI CHEMICAL COMPANY, LTD.Inventors: Eiichi Satou, Shigeru Nobe, Munehiro Oota, Masayuki Hanano, Shigeru Yoshikawa