Patents by Inventor Munehiro Takasugi

Munehiro Takasugi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF FRAGMENTING OR METHOD OF GENERATING CRACKS IN SEMICONDUCTOR MATERIAL, AND METHOD OF MANUFACTURING SEMICONDUCTOR MATERIAL LUMPS
    Publication number: 20210269942
    Abstract: Provided are a method of fragmenting or a method of generating cracks in a semiconductor material, and a method of producing semiconductor material lumps, which can prevent contamination from an electrode material accompanied by application of a high-voltage pulse; in a method of fragmenting or generating cracks in the semiconductor material by applying high-voltage pulse to the semiconductor material disposed in liquid, new fluid is supplied towards at least one of a part on which the high-voltage pulse is applied and a vicinity of an electrode part, and the new fluid and a part of the liquid are drawn from the liquid and discharged.
    Type: Application
    Filed: July 3, 2019
    Publication date: September 2, 2021
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Masahiro Kanai, Rikito Sato, Munehiro Takasugi, Koki Umehara
  • Hammer for breaking polycrystalline silicon
    Patent number: 7950308
    Abstract: The hammer for breaking polycrystalline silicon is provided with a handle portion extending along a center axis and a head portion extending in a direction intersecting a direction of the center axis at the leading end of the handle portion. The head portion is provided with a head main body connecting with the handle portion, a striking part installed at one end of the head main body via a coupling shaft portion, and a counter weight portion installed at the other end of the head main body. The head main body, the coupling shaft portion, the striking part and the counter weight portion are formed integrally from a hard metal. A round-raised striking surface is formed at the striking part.
    Type: Grant
    Filed: August 25, 2008
    Date of Patent: May 31, 2011
    Assignee: Mitsubishi Materials Corporation
    Inventors: Tetsuya Atsumi, Munehiro Takasugi
  • Hammer for breaking polycrystalline silicon
    Publication number: 20090056504
    Abstract: The hammer for breaking polycrystalline silicon is provided with a handle portion extending along a center axis and a head portion extending in a direction intersecting a direction of the center axis at the leading end of the handle portion. The head portion is provided with a head main body connecting with the handle portion, a striking part installed at one end of the head main body via a coupling shaft portion, and a counter weight portion installed at the other end of the head main body. The head main body, the coupling shaft portion, the striking part and the counter weight portion are formed integrally from a hard metal. A round-raised striking surface is formed at the striking part.
    Type: Application
    Filed: August 25, 2008
    Publication date: March 5, 2009
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Tetsuya Atsumi, Munehiro Takasugi