Abstract: A thin-film coating apparatus for forming a metal oxide film or diffusion source film on the surfaces of materials to be treated. The apparatus includes a solution-dropping nozzle device including an inner tube adapted to cause a solution to flow down therethrough and an outer tube enclosing the inner tube. The inner wall of the outer tube is spaced from the outer wall of the inner tube so as to define a flow path therebetween, the flow path being adapted to supply a cleaning solution to the tip portion of the inner tube. Because the tip portion of the inner tube can be cleaned efficiently, any concentration or deposition of the dropping solution is prevented from occurring at the tip portion of the inner tube.

Abstract: A coating apparatus comprises a spinning chuck rotatably supported within an enclosure and securely holding a substrate thereon. A coating material is applied onto the surface of the substrate and distributed over the substrate by centrifugal forces. An annular air duct is disposed in surrounding and spaced relation to the spinning chuck, and a disk is placed between the air duct and the spinning chuck and has a plurality of guide vanes. Fans are provided in the air duct to develop a positive flow of air over the substrate. The flow of air is guided by the guide vanes in a direction identical to the direction of rotation of the substrate so as to eliminate undesirable deposition from the end edges of the substrate.

Abstract: The inventive method comprises the steps of coating the substrate surface with a coating solution containing .beta.-diketone complex of a metallic element in an aprotic polar solvent, drying and irradiating the coating film on the surface with ultraviolet light, optionally, followed by a heat treatment to form an electrically insulating oxidized metal film on the surface. By virtue of the ultraviolet irradiation, the oxidized metal film can be imparted with increased insulation even by omitting the heat treatment or by decreasing the temperature of the heat treatment so that the adverse influences on the characteristics of the substrate can be minimized.

Abstract: A coating apparatus comprises a spinning chuck rotatably supported within an enclosure and securely holding a substrate thereon. A coating material is applied onto the surface of the substrate and distributed over the substrate by centrifugal forces. An annular air duct is disposed in surrounding and spaced relation to the spinning chuck, and a disk is placed between the air duct and the spinning chuck and has a plurality of guide vanes. Fans are provided in the air duct to develop a positive flow of air over the substrate. The flow of air is guided by the guide vanes in a direction identical to the direction of rotation of the substrate so as to eliminate undesirable deposition from the end edges of the substrate.

Abstract: A process for the formation of a metal oxide film on a substrate by coating the substrate with a coating solution and heating the substrate to a temperature of at least 100.degree. C. The coating solution is composed of (a) a .beta.-diketone, (b) at least one element or compound selected from the group consisting of elements capable of forming complexes with said .beta.-diketone, salts of the elements and hydrolysates of alkoxides of the elements, and (c) an aprotic polar solvent. As an alternative, it is composed of a metal complex of a .beta.-diketone and an aprotic polar solvent.

Abstract: A thin-film coating apparatus rotates a member on which a coating solution is dropped to spread the coating solution over the member. The thin-film coating apparatus comprises a spinner for securely supporting the member, a casing firmly attached to the spinner in surrounding relation to the spinner and the member, and a lid for closing an opening in the casing through which the member can be brought into and out of the casing, thereby defining a closed processing chamber in the casing.

Abstract: A coating solution for use in the formation of a metal oxide film is described. It is composed of (a) a .beta.-diketone, (b) at least one element or compound selected from the group consisting of elements capable of forming complexes with said .beta.-diketone, salts of the elements and hydrolysates of alkoxides of the elements, and (c) an aprotic polar solvent. As an alternative, it is composed of a metal complex of a .beta.-diketone and an aprotic polar solvent.

Abstract: A coating solution for forming a silica-based film, having a given viscosity, is coated on a substrate such as a silicon wafer, this coating solution is dried to form a silica-based film, and this silica-based film is exposed to ultraviolet radiation in an atmosphere containing ozone at room temperature or while heating it preferably at a temperature of not more than 300.degree. C., particularly at a temperature of from 50.degree. to 200.degree. C., by means of a heating member such as a hot plate.The film quality of the silica-based film can be improved by exposing it to ultraviolet radiation in the atmosphere containing ozone.

Abstract: A silicone film is formed by drying a solution coated on a substrate at a temperature below 150.degree. C. to form a silicone film on the substrate, treating the silicone film in an oxygen plasma, and heating the silicone film treated in the plasma at a temperature of 150.degree. C. or higher.

Abstract: A thin-film coating apparatus for forming a metal oxide film or diffusion source film on the surface of materials to be treated. The apparatus includes a solution-dropping nozzle device including an inner tube adapted to cause a solution to flow down therethrough and an outer tube enclosing the inner tube. The inner wall of the outer tube is spaced from the outer wall of the inner tube so as to define a flow path therebetween, the flow path being adapted to supply a cleaning solution to the tip portion of the inner tube. Because the tip portion of the inner tube can be cleaned efficiently, any concentration or deposition of the dropping solution is prevented from occurring at the tip portion of the inner tube.

Abstract: The adhesiveness of a silicone-based coating film on a substrate to an overcoating layer, e.g., a photoresist layer, can be improved without causing cracks when the silicone-based coating film is subjected to a plasma treatment at a temperature of 120.degree. C. or below in an atmosphere of a gas mainly composed of oxygen. Similar conditions of plasma treatment are applicable when patterning of a silicone-based coating film is desired in a procedure comprising the steps of forming a photoresist layer thereon, patterning of the photoresist layer in a photolithographic method, selectively etching the silicone-based coating film with the patterned resist layer serving as a mask and removing the photoresist layer by the plasma treatment.

Abstract: The coating solution of the invention is useful for forming a silica-based coating layer on a substrate such as semiconductor silicon wafers in the manufacturing process of semiconductor devices such as VLSIs. The coating solution is particularly advantageous to smooth a substrate surface having a difference in levels by completely filling the recessed areas. The coating solution is an organic solution of a cohydrolyzate of an alkoxy silane mixture composed of at least two kinds of di-, tri- and tetraalkoxy silane compounds such as a combination of methyl trimethoxy silane and tetramethoxy silane in a specified molar ratio and can be prepared by adding water to an organic solution of these alkoxy silane compounds without using any acid catalyst to effect the cohydrolysis of the silane compounds.

Abstract: A liquid coating composition for forming a silica-based coating film on the surface of a substrate such as a semiconductor silicon wafer. A partial hydrolysis product of an alkoxy silane and an alkoxy or phenoxy compound of pentavalent antimony are dissolved in an organic solvent. As compared with a trivalent antimony compound used in the prior art, the pentavalent antimony compound as an additive is very effective in respect of the improvements in the uniformity and increased thickness of the silica-based coating film prepared from the coating composition as well as storage stability of the coating composition over time.

Abstract: An improved silica-based film-forming composition for diffusion of antimony in the doping works of semiconductors is proposed which comprises an organic solvent, a partial hydrolysis product of an alkoxy silane compound and an antimony compound dissolved in the organic solvent. The antimony compound in the inventive composition is an alkoxy antimony or aryloxy antimony compound so that the problem of corrosion of the coating apparatus can be entirely avoided without decreasing the dopant concentration in the semiconductor substrate, as well as to provide a film-forming composition which is advantageously stable in storage.

Abstract: A thin-film coating apparatus for coating a thin film on a material includes a casing, a spinner mounted in the casing for rotating the material, and a pipe disposed upwardly of the spinner and having in a lower end thereof a nozzle for dropping a film-forming coating solution onto the material. The casing comprises an annular upper plate, a cylindrical circumferential wall, and a bottom plate. The annular upper plate has defined therein gas flow passages for passage of an inert gas such as an N.sub.2 gas introduced from an exterior supply source, and gas ejector holes defined in the upper surface of the annular upper plate in communication with the gas flow passages for ejecting the inert gas toward the pipe.

Abstract: An equipment (100; 200) for thermal stabilization process of photoresist pattern on semiconductor wafer comprises an ultraviolet lamp (20) by which a photoresist pattern formed on a semiconductor wafer (W) put in a process chamber (S) under vacuum pressure is irradiated with ultraviolet rays of a predetermined strength, and a heater (10) for heating the wafer to a predetermined temperature.

Abstract: The invention provides a novel means for providing a highly heat-resistant and corrosion-resistant coating film on the surface of a substrate such as a semiconductor silicon wafer or glass plate by coating the surface with a liquid coating composition which is a solution of an oligomeric organopolysiloxane as a partial dehydration-condensation product of a monohydrocarbylsilane triol RSi(OH).sub.3, optionally, with admixture of a dihydrocarbylsilane diol R.sub.2 Si(OH).sub.2, R being a monovalent hydrocarbon group, e.g. methyl or phenyl, in an organic solvent followed by baking of the coated substrate to convert the coating layer into a cured resin film.

Abstract: Waste oils of synthetic lubricants containing fluorine atom are admixed with a solvent containing fluorine atom compatible with the waste oils thereby causing contaminants contained in the waste oils to float up into the upper region on the mixed solution. The solvent containing fluorine atom is removed from the solution of the lower layer by way of evaporation, distillation or the like. The regenerated oils of the synthetic lubricants containing fluorine atom thus obtained are completely colorless and transparent in appearance, and they have properties and performances quite similar to those of the fresh oils.

Abstract: An automatic plasma processing device having a substantially vertically disposed plasma chamber in which a plurality of semiconductor wafers can be simultaneously processed with plasma. The automatic plasma processing device comprises a container cassette adapted to contain a plurality of wafers therein, a feeding mechanism for taking out the wafers one by one from the cassette and for feeding the same, a holding frame for receiving the wafers one by one from the feeding mechanism and for holding the same therein, a driving mechanism for moving the holding frame up and down into and out of the plasma chamber, a plasma generating mechanism for generating plasma in the plasma chamber, and a control system for controlling the aforesaid mechanisms. The device is simplified in construction and can automatically and successively process a large number of wafers, while at the same time having a compact construction.