Abstract: An optical monitor device of the present microwave plasma etching device has: a monitor head located in a position more radially inward than the edge of a semiconductor wafer W mounted on a susceptor, more radially outward than a coaxial pipe, and above a cover plate; an optical waveguide for monitoring provided vertically below the monitor head, and longitudinally traversing the cooling plate, a dielectric plate, and a dielectric window; and a monitor main body optically connected to the monitor head via an optical fiber.

Abstract: A process monitoring device 11 includes a light source unit that outputs light; a light detection unit that detects an intensity of light; a first optical path 21 that guides the light outputted from the light source unit to a wafer W and guides reflection light from the wafer W to the light detection unit; a second optical path that has a light propagation characteristic equivalent to that of the first optical path 21 and guides the light outputted from the light source unit to the light detection unit without allowing the light to pass the wafer W; and a controller 17 that corrects intensity information of the light detected by the light detection unit via the first optical path 21 based on intensity information of the light detected by the light detection unit via the second optical path, and analyzes a structure of the wafer W.

Abstract: [Problem] To carry out high accuracy optical monitoring of the surface of a substrate to be treated inside a treatment vessel using non-coherent monitor light having a wide wavelength range, without affecting the uniformity of the electromagnetic radiation from a planar slot antenna. [Solution] The optical monitor device 100 of the present microwave plasma etching device has: a monitor head 102 located in a position more radially inward than the edge of a semiconductor wafer W mounted on a susceptor 12, more radially outward than a coaxial pipe 66, and above a cover plate 72; an optical waveguide 104 for monitoring provided vertically below the monitor head 102, and longitudinally traversing the cooling plate 72, a dielectric plate 54, and a dielectric window 52; and a monitor main body optically connected to the monitor head 102 via an optical fiber 106.

Abstract: An information processing device includes a target value receiving unit receiving one or more types of target values in a predetermined semiconductor manufacturing process; a parameter acquiring unit acquiring values of parameters during the semiconductor manufacturing process; an execution result acquiring unit acquiring one or more types of execution results indicating results of the semiconductor manufacturing process; an accumulation unit associating the execution results, the target values, and the values of parameters with one another and accumulating the same; a correlation acquiring unit acquiring correlation information indicating correlations among the execution results, the target values, and the values of parameters; an assist information acquiring unit acquiring assist information related to parameters with high correlation with respect to the target values received by the target value receiving unit by using the correlation information; and an output unit outputting the assist information acquir

Abstract: A host personal computer (PC) 100 is connected to a plurality of slave PC 200 for controlling a plurality of process modules (PM) or a transfer module (TM). The host PC 100 judges whether or not an operation right is given to the slave PC 200 which has requested the operation right in accordance with the screen operation request from the slave PC 200.