Abstract: Methods of optimizing the diameters of nanowire photodiode light sensors. The method includes comparing the response of nanowire photodiode pixels having predetermined diameters with standard spectral response curves and determining the difference between the spectral response of the photodiode pixels and the standard spectral response curves. Also included are nanowire photodiode light sensors with optimized nanowire diameters and methods of scene reconstruction.

Abstract: An embodiment relates to an image sensor comprising (a) a optical pipe comprising a core and a cladding, and (b) a pair of photosensitive elements comprising a central photosensitive element and a peripheral photosensitive element, wherein the central photosensitive element is operably coupled to the core and the peripheral photosensitive element is operably coupled to the cladding, and methods of fabricating and using the same. The image sensor could further comprise a lens structure or an optical coupler or an optical coupler over the optical pipe, wherein the lens structure or the optical coupler or the optical coupler is operably coupled to the optical pipe.

Abstract: A photovoltaic device operable to convert light to electricity, comprising a substrate, a plurality of structures essentially perpendicular to the substrate, one or more recesses between the structures, each recess having a planar mirror on a bottom wall thereof and each recess filled with a transparent material. The structures have p-n or p-i-n junctions for converting light into electricity. The planar mirrors function as an electrode and can reflect light incident thereon back to the structures to be converted into electricity.

Abstract: An image sensor and methods of use the image sensor, methods of manufacturing the image sensor, and apparatuses comprising the image sensor are disclosed. The image sensor has pixels includes at least one nanopillar with a gate electrode surrounding the at least one nanopillar, wherein the at least one nanopillar is adapted to convert light impinging thereon to electrical signals and the gate electrode is operable to pinch off or allow current flow through the at least one nanopillar. The image sensor can have a plurality of pixels arranged in an individually addressable fashion. The at least one nanopillar has a cladding. A refractive index of the cladding being smaller than a refractive index of the nanopillar.

Abstract: An image sensor comprising a substrate and one or more of pixels thereon. The pixels have subpixels therein comprising nanowires sensitive to light of different color. The nanowires are functional to covert light of the colors they are sensitive to into electrical signals.

Abstract: Described herein is a nanowire array, comprising a substrate, a plurality of fluorescent nanowires extending essentially perpendicularly from the substrate and a reflective layer disposed on the substrate in areas between the fluorescent nanowires; wherein the fluorescent nanowires are operable to fluoresce at a wavelength of a collective mode of the nanowire array.

Abstract: Various embodiments for etching of silicon nitride (SixNy) lightpipes, waveguides and pillars, fabricating photodiode elements, and integration of the silicon nitride elements with photodiode elements are described. The results show that the quantum efficiency of the photodetectors (PDs) can be increased using vertical silicon nitride vertical waveguides.

Abstract: Described herein is a device comprising: a substrate; one or more of a nanostructure extending essentially perpendicularly from the substrate; wherein the nanostructure comprises a core of a doped semiconductor, an first layer disposed on the core, and a second layer of an opposite type from the core and disposed on the first layer.

Abstract: Methods, apparatuses, systems, and devices relating to fabricating one or more nanowires are disclosed. One method for fabricating a nanowire includes: selecting a particular wavelength of electromagnetic radiation for absorption for a nanowire; determining a diameter corresponding to the particular wavelength; and fabricating a nanowire having the determined diameter. According to another embodiment, one or more nanowires may be fabricated in an array, each having the same or different determined diameters. An image sensor and method of imaging using such an array are also disclosed.

Abstract: Described herein is device configured to be a solar-blind UV detector comprising a substrate; a plurality of pixels; a plurality of nanowires in each of the plurality of pixel, wherein the plurality of nanowires extend essentially perpendicularly from the substrate.

Abstract: Described herein is a device operable to detect polarized light comprising: a substrate; a first subpixel; a second subpixel adjacent to the first subpixel; a first plurality of features in the first subpixel and a second plurality of features in the second subpixel, wherein the first plurality of features extend essentially perpendicularly from the substrate and extend essentially in parallel in a first direction parallel to the substrate and the second plurality of features extend essentially perpendicularly from the substrate and extend essentially in parallel in a second direction parallel to the substrate; wherein the first direction and the second direction are different; the first plurality of features and the second plurality of features react differently to the polarized light.

Abstract: A nanowire array is described herein. The nanowire array comprises a substrate and a plurality of nanowires extending essentially vertically from the substrate; wherein: each of the nanowires has uniform chemical along its entire length; a refractive index of the nanowires is at least two times of a refractive index of a cladding of the nanowires. This nanowire array is useful as a photodetector, a submicron color filter, a static color display or a dynamic color display.

Abstract: A photovoltaic device operable to convert light to electricity, comprising a substrate, a plurality of structures essentially perpendicular to the substrate, one or more recesses between the structures, each recess having a planar mirror on a bottom wall thereof. The structures have p-n or p-i-n junctions for converting light into electricity. The planar mirrors function as an electrode and can reflect light incident thereon back to the structures to be converted into electricity.

Abstract: An embodiment relates to a device comprising a substrate, a nanowire and a doped epitaxial layer surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. Another embodiment relates to a device comprising a substrate, a nanowire and one or more photogates surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire, and wherein the one or more photogates comprise an epitaxial layer.

Abstract: An embodiment relates to a device comprising a substrate having a front side and a back-side that is exposed to incoming radiation, a nanowire disposed on the substrate and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.

Abstract: An imaging device formed as an active pixel array combining a CMOS fabrication process and a nanowire fabrication process. The pixels in the array may include a single or multiple photogates surrounding the nanowire. The photogates control the potential profile in the nanowire, allowing accumulation of photo-generated charges in the nanowire and transfer of the charges for signal readout. Each pixel may also include a readout circuit which may include a reset transistor, a charge transfer switch transistor, source follower amplifier, and pixel select transistor. A nanowire is generally structured as a vertical rod on the bulk semiconductor substrate to receive the light energy impinging onto the tip of the nanowire. The nanowire may be configured to function as either a photodetector or a waveguide configured to guild the light beam to the bulk substrate. In the embodiments herein, with the presence of the nanowire photogate and a substrate photogate, light of different wavelengths can be detected.

Abstract: An embodiment relates to a method of manufacturing a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.

Abstract: Embodiments relate to methods and devices comprising an optical pipe comprising a core and a cladding. An embodiment includes obtaining a substrate comprising a photodiode and a first protective layer, the first protective layer having a predetermined thickness and growing a nanowire having a length L on the photodiode, wherein the length L is greater than the predetermined thickness of the protective layer. Another embodiment includes (1) obtaining a substrate comprising a photodiode and a protective layer, (2) fabricating a nanowire light pipe on the photodiode, the light pipe comprising a nanowire core and a cladding; and (3) coating the substrate and the nanowire light pipe with a protective coating.

Abstract: An imaging device including a plurality of photo-sensitive elements suitable for imaging small objects less than 500 nm in size. Each of the photo-sentive elements forms a passive pixel which comprises at least one nanowire structured photodetector and a switch transistor. The nanowire structured photodetector is configured to receive the photons and store the photo generated charges and behave as a waveguide. The switch transistor is formed either in the substrate or at the same body of the nanowire and is configured to allow photo-genereated charges in the nanowire to accumulate when off and to drain from the nanowire when on. The pixel array is configured to allow high resolution imaging by arranging in a penny round pattern.

Abstract: An embodiment relates to a nanowire-containing LED device with optical feedback comprising a substrate, a nanowire protruding from a first side the substrate, an active region to produce light, a optical sensor and a electronic circuit, wherein the optical sensor is configured to detect at least a first portion of the light produced in the active region, and the electronic circuit is configured to control an electrical parameter that controls a light output of the active region. Yet, another embodiment relates to an image display having the nanowire-containing LED device with optical feedback.