Patents by Inventor Munirathna Padmanaban

Munirathna Padmanaban has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6610465
    Abstract: The present invention provides a method for producing a film forming resin suitable for use in a photoresist composition, involving the following steps: (a) providing a solution of a film forming resin in a solvent; (b) providing the following two filter sheets: (i) a filter sheet containing a self-supporting fibrous matrix having immobilized therein a particulate filter aid and particulate ion exchange resin particles, where the particulate filter aid and ion exchange resin particles are distributed substantially uniformly throughout a cross-section of said matrix; and (ii) a filter sheet containing a self-supporting matrix of fibers having immobilized therein particulate filter aid and binder resin; (c) rinsing the filter sheets of step (b) with the solvent of step (a); and (d) passing the solution of the film forming resin through the rinsed filter sheets of step (c).
    Type: Grant
    Filed: April 11, 2001
    Date of Patent: August 26, 2003
    Assignee: Clariant Finance (BVI) Limited
    Inventors: M. Dalil Rahman, Douglas McKenzie, Takanori Kudo, Munirathna Padmanaban
  • Publication number: 20030129527
    Abstract: The present invention relates to a novel negative working deep uv photoresist that is developable in an aqueous alkaline solution, and comprises a fluorinated polymer, photoactive compound and a crosslinking agent. The photoresist composition is particularly useful for patterning with exposure wavelengths of 193 nm and 157 nm.
    Type: Application
    Filed: January 9, 2002
    Publication date: July 10, 2003
    Inventors: Takanori Kudo, Munirathna Padmanaban, Ralph R. Dammel, Medhat A. Touky
  • Publication number: 20030087180
    Abstract: The present invention relates to a photoresist composition sensitive to radiation in the deep ultraviolet, particularly a positive working photoresist sensitive in the range of 100-200 nanometers(nm). The photoresist composition comprises a) a polymer that is insoluble in an aqueous alkaline solution and comprises at least one acid labile group, and furthermore where the polymer is essentially non-phenolic, b) a compound capable of producing an acid upon radiation, and c) an additive that reduces the effect of electrons and ions on the photoresist image.
    Type: Application
    Filed: November 7, 2001
    Publication date: May 8, 2003
    Inventors: Takanori Kudo, Ralph R. Dammel, Munirathna Padmanaban
  • Publication number: 20030065119
    Abstract: A radiation absorbing polymer having chemically bonded thereto a radiation absorbing dye, which has high absorption at a predetermined wavelength radiation, which shows good adhesion to a substrate and good thin film-forming, which has no dependence upon resists, which is soluble in a solvent for photoresists but becomes insoluble after being baked; a composition for radiation absorbing coating containing this polymer, and a radiation absorbing coating such as an anti-reflective coating formed from this composition are disclosed. The radiation absorbing polymer comprises a copolymer containing at least both a recurring unit composed of a monomer containing a keto group and a divalent group (preferably a methylene group) in its side chain and a recurring unit composed of a monomer containing an organic chromophore bonded directly or through a linkage group to the main chain. This radiation absorbing polymer is dissolved in a solvent such as alcohol, aromatic hydrocarbon, ketone, ester, etc.
    Type: Application
    Filed: August 27, 2002
    Publication date: April 3, 2003
    Applicant: Clariant Finance (BVI) Limited
    Inventors: Wen-Bing Kang, Munirathna Padmanaban, Hatsuyuki Tanaka, Ken Kimura, Takanori Kudo, George Pawlowski
  • Publication number: 20020197555
    Abstract: The present invention provides a method for producing a film forming resin suitable for use in a photoresist composition, involving the following steps: (a) providing a solution of a film forming resin in a solvent, the film forming resin made by polymerizing at least one monomer containing a cycloolefin or an acid labile acrylate or a methacrylate; (b) providing at least one of the following two filter sheets: (i) a filter sheet containing a self-supporting fibrous matrix having immobilized therein a particulate filter aid (which has preferably been acid-washed) and particulate ion exchange resin particles having an average particle size of from about 2 to about 10 microns, where the particulate filter aid and ion exchange resin particles are distributed substantially uniformly throughout a cross-section of said matrix; and/or (ii) a filter sheet containing a self-supporting matrix of fibers (preferably cellulose) having immobilized therein particulate filter aid and binder resin, the filter sheet preferably
    Type: Application
    Filed: April 11, 2001
    Publication date: December 26, 2002
    Inventors: M. Dalil Rahman, Douglas McKenzie, Takanori Kudo, Munirathna Padmanaban
  • Patent number: 6468718
    Abstract: A radiation absorbing polymer having chemically bonded thereto a radiation absorbing dye, which has high absorption at a predetermined wavelength radiation, which shows good adhesion to a substrate and good thin film-forming, which has no dependence upon resists, which is soluble in a solvent for photoresists but becomes insoluble after being baked; a composition for radiation absorbing coating containing this polymer, and a radiation absorbing coating such as an anti-reflective coating formed from this composition are disclosed. The radiation absorbing polymer comprises a copolymer containing at least both a recurring unit composed of a monomer containing a keto group and a divalent group (preferably a methylene group) in its side chain and a recurring unit composed of a monomer containing an organic chromophore bonded directly or through a linkage group to the main chain. This radiation absorbing polymer is dissolved in a solvent such as alcohol, aromatic hydrocarbon, ketone, ester, etc.
    Type: Grant
    Filed: February 4, 1999
    Date of Patent: October 22, 2002
    Assignee: Clariant Finance (BVI) Limited
    Inventors: Wen-Bing Kang, Munirathna Padmanaban, Hatsuyuki Tanaka, Ken Kimura, Takanori Kudo, Georg Pawlowski
  • Patent number: 6447980
    Abstract: The present invention relates to a chemically amplified system, which is, sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a polymer that is insoluble an aqueous alkaline solution and comprises at least one acid labile group, b) a compound capable of producing an acid upon radiation. The present invention comprises a polymer that is made from a alicyclic hydrocarbon olefin, an acrylate with a pendant cyclic moeity, and a cyclic anhydride. The present invention also relates to a process for imaging such a photoresist.
    Type: Grant
    Filed: July 19, 2000
    Date of Patent: September 10, 2002
    Assignee: Clariant Finance (BVI) Limited
    Inventors: M. Dalil Rahman, Munirathna Padmanaban, Ralph R. Dammel
  • Patent number: 6365322
    Abstract: The present invention relates to a novel photoresist composition sensitive in the deep ultraviolet region, where the photoresist performance is not adversely impacted by basic contaminants in the processing environment of the photoresist. The novel photoresist comprises a polymer, a photoactive compound, a basic compound that is a sulfonium or iodonium compound that is essentially nonabsorbing at the exposure wavelength of the photoresist, and a solvent composition. The invention further relates to a process for imaging such a photoresist in the deep ultraviolet region.
    Type: Grant
    Filed: December 7, 1999
    Date of Patent: April 2, 2002
    Assignee: Clariant Finance (BVI) Limited
    Inventors: Munirathna Padmanaban, Ralph R. Dammel
  • Patent number: 6329117
    Abstract: A composition for an anti-reflective coating or a light absorbing coating, which shows good light absorption for lights of 100-450 nm in wavelength, suffers neither footing nor intermixing, and has excellent storage stability and step coverage, and novel copolymers to be used therein.
    Type: Grant
    Filed: August 9, 1999
    Date of Patent: December 11, 2001
    Assignee: Clariant International, Ltd.
    Inventors: Munirathna Padmanaban, Wen-Bing Kang, Georg Pawlowski, Ken Kimura, Hatsuyuki Tanaka
  • Patent number: 6277750
    Abstract: As a bottom anti-reflective coating material for use in photolithography, polymer dyes represented by following general formula are used. The polymer dyes are able to form a bottom anti-reflective coating having good film formation properties, good absorption properties at exposure wavelength, good step coverage, non-intermixing with photoresist and high etch rate. wherein R represents H or a substituted or non-substituted alkyl, cycloalkyl, or aryl group, R1 represents a substituted or non-substituted alkyl or aryl, or a —COOR3 group in which R3 represents an alkyl group, R2 represents a substituted or non-substituted alkyl, cycloalkyl, or aryl group, D is an organic chromophore which absorbs at the exposure wavelength (150-450 nm) and represents a substituted or non-substituted aryl, condensed aryl, or heteroaryl group, m and o are any integer above zero, and n, p and q are any integer including zero.
    Type: Grant
    Filed: June 27, 2000
    Date of Patent: August 21, 2001
    Assignee: Clariant Finance (BVI) Limited
    Inventors: Georg Pawlowski, Munirathna Padmanaban, Wen-Bing Kang, Hatsuyuki Tanaka, Ken Kimura, Yoshinori Nishiwaki
  • Patent number: 6114085
    Abstract: The present invention relates to a novel antireflecting coating composition, where the composition comprises a polymer, thermal acid generator and a solvent composition. The invention further comprises processes for the use of such a composition in photolithography. The composition strongly absorbs radiation ranging from about 130 nm (nanometer) to about 250 nm.
    Type: Grant
    Filed: November 18, 1998
    Date of Patent: September 5, 2000
    Assignee: Clariant Finance (BVI) Limited
    Inventors: Munirathna Padmanaban, Ralph R. Dammel, Stanley A. Ficner, Joseph E. Oberlander, John P. Sagan
  • Patent number: 5852128
    Abstract: Acid-labile group protected hydroxystyrene polymers having recurrent pendant groups such as 1-(2-methanecarbonyl oxyethoxy)ethoxy group and 1-(2-N-methylcarbamatoethoxy) ethoxy group. A resist containing the polymer, a photo acid generator, a base, additives and a solvent is sensitive to UV, electron beam and X-ray. In the resist, acid is formed in the exposed area during irradiation, which deprotects acid-labile group catalytically during application of post-exposure baking. Positive patterns are formed after development using an alkaline solution.
    Type: Grant
    Filed: September 3, 1997
    Date of Patent: December 22, 1998
    Assignee: Clariant AG
    Inventors: Munirathna Padmanaban, Georg Pawlowski, Yoshiaki Kinoshita, Hiroshi Okazaki, Seiya Masuda, Satoru Funato, Tetsu Yamamoto
  • Patent number: 5846690
    Abstract: A radiation-sensitive composition is disclosed which includes (a) a binder insoluble in water but soluble in or capable of being swelled in an aqueous alkali solution, (b) a dissolution inhibitor composed of (b1) a poly(N,O-acetal) having a general formula: ##STR1## wherein R.sup.3 is alkyl or substituted or unsubstituted aryl, R.sup.4 is a divalent group selected from alkylene, cycloalkylene, alkene or alkyne, R.sup.5 is alkyl, alkene, alkyne or cycloalkyl, X is --OCO--, --CO-- or --NHCO--, and p is a number not less than 1, and/or (b2) a phenol compound having a hydroxyl group which is protected by a group which can be cleaved in the presence of an acid, (c) a photosensitive compound capable of generating an acid when exposed to an active radiation, (d) a base capable of being decomposed when exposed to an active radiation to form a neutral compound derived therefrom, (e) a plasticizer, and (f) a solvent.
    Type: Grant
    Filed: March 14, 1996
    Date of Patent: December 8, 1998
    Assignee: Hoechst Japan Limited
    Inventors: Munirathna Padmanaban, Yoshiaki Kinoshita, Hiroshi Okazaki, Seiya Masuda, Natsumi Kawasaki, Satoru Funato, Georg Pawlowski
  • Patent number: 5843319
    Abstract: A process for producing a solution of a basic or non-basic sulfonium compound (A) of formulae II-V: ##STR1## wherein R.sup.5, R.sup.6 and R.sup.7 each independently represent a C.sub.1 -C.sub.18 alkyl, aryl or heteroaryl group or an aryl group mono-, di- or tri-substituted with an alkyl, an alkylaryl, an aryl, a halogen, an alkoxy, a phenoxy, a thiophenol, a phenylsulfonyl or a phenylsulphenyl;Y represents (CH.sub.2).sub.n (wherein n is 0 or 1), O or S;R.sup.8 and R.sup.9 represent a C.sub.1 -C.sub.4 alkyl, alkoxy or a halogen;R.sup.10 and R.sup.11 represent a C.sub.1 -C.sub.4 alkyl, alkoxy or a halogen;n is 5 or 6; andX.sub.2.sup.- represents a basic anion having a pK.sub.B value of -3 to +5; comprising the steps of:(a) dissolving a sulfonium salt (B) in a metal-ion free polar or non-polar solvent to form a solution, said sulfonium salt (B) being selected from said formulae II-V, wherein R.sup.5 to R.sup.11, Y and n of said sulfonium salt (B) have the sane meaning as above and X.sub.2.sup.
    Type: Grant
    Filed: July 29, 1997
    Date of Patent: December 1, 1998
    Assignee: Hoechst Japan Limited
    Inventors: Klaus Juergen Przybilla, Takanori Kudo, Seiya Masuda, Yoshiaki Kinoshita, Natsumi Suehiro, Munirathna Padmanaban, Hiroshi Okazaki, Hajime Endo, Ralph Dammel, Georg Pawlowski
  • Patent number: 5773191
    Abstract: A radiation-sensitive composition is disclosed which includes:(a) a copolymer represented by the general formula: ##STR1## wherein R.sup.1 is a hydrogen atom or a methyl group, R.sup.2 is a substituted or unsubstituted alkyl group or a substituted or unsubstituted aryl group, Ar is a substituted or unsubstituted phenylene group or a substituted or unsubstituted cyclohexylene group, X is a divalent group represented by --SO.sub.2 -- or --CO--, m and n are individually an integer not less than 1;(b) a dissolution inhibitor composed of a compound represented by the general formula: ##STR2## wherein R.sup.3 is an alkyl group or a substituted or unsubstituted aryl group, R.sup.4 is an alkylene group, a cycloalkylene group, an alkenylene group or an alkynylene group, R.sup.
    Type: Grant
    Filed: July 24, 1996
    Date of Patent: June 30, 1998
    Assignee: Hoechst Japan Limited
    Inventors: Munirathna Padmanaban, Yoshiaki Kinoshita, Satoru Funato, Natsumi Kawasaki, Hiroshi Okazaki, Georg Pawlowski
  • Patent number: 5738972
    Abstract: A chemically amplified resist material comprising: a) a homopolymer or a copolymer of hydroxystyrene or hydroxystyrene partly protected by a group sensitive to an acid such as a tetrahydropyranyl or t-butoxycarbonyl group, b) a dissolution inhibitor such as poly(N,O-acetal) or phenol or bisphenol protected by a group cleavable with an acid, c) a photosensitive compound capable of generating an acid upon exposure, d) a base capable of degrading upon radiation to regulate the line width in a period between the exposure step and the processing steps after exposure, e) a low-molecular weight phenolic or polyphenolic compound having a structure represented by the following general formula or a mixture of the phenolic or polyphenolic compounds: ##STR1## where n is an integer of 1 to 5, m is an integer of 0 to 4, n+m.ltoreq.5, and p is an integer of 1 to 10, each R is a C.sub.1 -C.sub.12 alkyl group or an unsubstituted or substituted cycloalkyl group or a C.sub.1 -C.sub.
    Type: Grant
    Filed: May 28, 1997
    Date of Patent: April 14, 1998
    Assignee: Hoechst Japan Limited
    Inventors: Munirathna Padmanaban, Natsumi Suehiro, Yoshiaki Kinoshita, Satoru Funato, Seiya Masuda, Hiroshi Okazaki, Georg Pawlowski
  • Patent number: 5663035
    Abstract: A radiation-sensitive mixture for use in the production of semiconductor elements, which has high sensitivity and high resolution, which can be developed by an aqueous alkaline solution, and which is based on a novel concept in that a stable acid latent image is controlled by using a radiation-decomposable base.The mixture is characterized by comprising as essential components a) a binder which is insoluble in water but soluble in an aqueous alkaline solution; b.sup.1) a compound having at least one bond which can be cleaved by an acid, or b.sup.2) a compound having at least one bond which is crosslinked with the compound a) by an acid; c) a compound which generates an acid when irradiated; and d) a basic iodonium compound.
    Type: Grant
    Filed: April 12, 1995
    Date of Patent: September 2, 1997
    Assignee: Hoechst Japan Limited
    Inventors: Seiya Masuda, Munirathna Padmanaban, Takanori Kudo, Yoshiaki Kinoshita, Natsumi Suehiro, Yuko Nozaki, Hiroshi Okazaki, Klaus Jurgen Przybilla
  • Patent number: 5641594
    Abstract: A colored, photosensitive resin composition of a pigment dispersing-type is disclosed.The colored, photosensitive resin composition is characterized by containing (a) a polymer having alcohlic or phenolic hydroxyl groups, (b) a compound capable of producing a nitrene when irradiated with an actinic radiation, (c) a pigment, and (d) a solvent. Preferably, the composition further contains (e) a heat crosslinking agent and/or (f) a compound having a polymerizable double bond in addition to the above ingredients.According to the present invention, the production of a color filter need not be performed in an inert gas atmosphere, does not require an oxygen barrier film and does not require heating during the period of from the exposure step to the development step. Thus, the use of the composition permits the color filter production steps to be made significantly simple so that the composition provides a great value in industrial utilization.
    Type: Grant
    Filed: August 25, 1995
    Date of Patent: June 24, 1997
    Assignee: Hoechst Japan Limited
    Inventors: Takanori Kudo, Yuko Nozaki, Kazuya Nagao, Yuki Nanjo, Hiroshi Okazaki, Yoshiaki Kinoshita, Seiya Masuda, Munirathna Padmanaban, Natsumi Suehiro
  • Patent number: 5595855
    Abstract: A chemically amplified radiation sensitive composition comprising: (a) a copolymer such as poly(4-hydroxystyrene-co-styrene), (b) a dissolution inhibitor such as polyacetal or (b') a crosslinking agent, (c) a radiation sensitive compound capable of generating an acid upon exposure to actinic radiation, (d) a radiation sensitive base capable of stabilizing the width of lines throughout steps from exposure to post-exposure bake treatment, and (e) a solvent for dissolving the components (a) to (d), can realize fine lines and spaces down to 0.22 microns, for example, using KrF laser, and possesses excellent heat and etch resistance and adhesiveness to substrates, and produces patterns with low standing waves arising due to substrate reflectiveness of exposed light.
    Type: Grant
    Filed: February 17, 1995
    Date of Patent: January 21, 1997
    Assignee: Hoechst Japan Limited
    Inventors: Munirathna Padmanaban, Yoshiaki Kinoshita, Natsumi Suehiro, Takanori Kudo, Seiya Masuda, Yuko Nozaki, Hiroshi Okazaki, Georg Pawlowski
  • Patent number: 5525453
    Abstract: A novel positive-working radiation-sensitive mixture having a high sensitivity to radiation in a short-wavelength UV region is provided which can be developed in an aqueous alkaline solution, has a stable acid latent image and is used for the production of a semiconductor. The mixture comprises, as indispensable components, a) a binder insoluble in water but soluble in an aqueous alkaline solution, b) a compound having at least one bond cleavable with an acid, c) a compound capable of producing an acid upon radiation, and d.sub.1) a basic ammonium compound or d.sub.2) a basic sulfonium compound.
    Type: Grant
    Filed: February 15, 1994
    Date of Patent: June 11, 1996
    Assignee: Hoechst Japan Limited
    Inventors: Klaus J. Przybilla, Takanori Kudo, Seiya Masuda, Yoshiaki Kinoshita, Natumi Suehiro, Munirathna Padmanaban, Hiroshi Okazaki, Hajime Endo, Ralph Dammel, Georg Pawlowski