Abstract: The invention relates to a method of detecting the interaction between at least one entity and a dielectric layer containing different electron levels in the energy band gap of the dielectric layer, the method comprising the following steps: a) depositing the entity on the dielectric layer; b) subjecting the dielectric layer and the entity deposited thereon to exciting electromagnetic radiation that does not give rise to observable luminescence in the entity itself under the conditions implemented in step c); and c) detecting the luminescence of the dielectric layer, in which the radiative and non-radiative electron transitions between the energy levels of the band gap have been influenced as a result of its interaction with the entity.

Abstract: The present invention relates to a method for preparing, on a silicon wafer, an n+pp+ or p+nn+ structure which includes the following consecutive steps: a) on a p or n silicon wafer (1), which includes a front surface (8) and a rear surface (9), a layer of boron-doped silicon oxide (BSG) (2) is formed on the rear surface (9) by PECVD, followed by a SiOx diffusion barrier (3); b) a source of phosphorus is diffused such that the phosphorus and the boron co-diffuse and in order also to form: on the front surface (8) of the wafer obtained at the end of step a), a layer of phosphorus-doped silicon oxide (PSG) (4) and an n+ doped area (5); and on the rear surface of the wafer obtained at the end of step a), a boron-rich area (BRL) (6), as well as a p+ doped area (7); c) the layers of BSG (2) and PSG (4) oxides and SiOx (3) are removed, the BRL (6) is oxidized and the layer resulting from said oxidation is removed.

Abstract: The invention relates to a method of detecting the interaction between at least one entity and a dielectric layer containing different electron levels in the energy band gap of the dielectric layer, the method comprising the following steps: a) depositing the entity on the dielectric layer; b) subjecting the dielectric layer and the entity deposited thereon to exciting electromagnetic radiation that does not give rise to observable luminescence in the entity itself under the conditions implemented in step c); and c) detecting the luminescence of the dielectric layer, in which the radiative and non-radiative electron transitions between the energy levels of the band gap have been influenced as a result of its interaction with the entity.

Abstract: The present invention relates to a method for preparing, on a silicon wafer, an n+pp+ or p+nn+ structure which includes the following consecutive steps: a) on a p or n silicon wafer (1), which includes a front surface (8) and a rear surface (9), a layer of boron-doped silicon oxide (BSG) (2) is formed on the rear surface (9) by PECVD, followed by a SiOx diffusion barrier (3); b) a source of phosphorus is diffused such that the phosphorus and the boron co-diffuse and in order also to form: on the front surface (8) of the wafer obtained at the end of step a), a layer of phosphorus-doped silicon oxide (PSG) (4) and an n+ doped area (5); and on the rear surface of the wafer obtained at the end of step a), a boron-rich area (BRL) (6), as well as a p+ doped area (7); c) the layers of BSG (2) and PSG (4) oxides and SiOx (3) are removed, the BRL (6) is oxidised and the layer resulting from said oxidation is removed.