Patents by Inventor Mutsumi MORITA

Mutsumi MORITA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus and method for growing nitride semiconductor crystal film
    Patent number: 8470694
    Abstract: An apparatus for growing a nitride semiconductor crystal film, comprises a chamber that can control inside temperature and air pressure, a susceptor supported by a rotating shaft inside the chamber and on which a growth substrate is placed, a reactant gas supplier that emits reactant gas to the growth substrate in parallel to a surface of the growth substrate, a first subflow gas supplier that emits first subflow gas for pressing the reactant gas down to the surface of the growth substrate at an inclination angle of 45 to 90 degrees in a same in-plane direction as the reactant gas, a second subflow gas supplier that emits second subflow gas for removing the reactant gas from an periphery of the growth substrate to the surface at an inclination angle of 45 to 90 degrees, and an exhaust device that exhausts gas from the chamber.
    Type: Grant
    Filed: February 10, 2011
    Date of Patent: June 25, 2013
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Shinichi Tanaka, Tomoaki Kodama, Mutsumi Morita, Masayuki Kanechika, Masayuki Makishima, Yasuro Kingo, Toshiyuki Sugawara
  • APPARATUS AND METHOD FOR GROWING NITRIDE SEMICONDUCTOR CRYSTAL FILM
    Publication number: 20110201181
    Abstract: An apparatus for growing a nitride semiconductor crystal film, comprises a chamber that can control inside temperature and air pressure, a susceptor supported by a rotating shaft inside the chamber and on which a growth substrate is placed, a reactant gas supplier that emits reactant gas to the growth substrate in parallel to a surface of the growth substrate, a first subflow gas supplier that emits first subflow gas for pressing the reactant gas down to the surface of the growth substrate at an inclination angle of 45 to 90 degrees in a same in-plane direction as the reactant gas, a second subflow gas supplier that emits second subflow gas for removing the reactant gas from an periphery of the growth substrate to the surface at an inclination angle of 45 to 90 degrees, and an exhaust device that exhausts gas from the chamber.
    Type: Application
    Filed: February 10, 2011
    Publication date: August 18, 2011
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Shinichi TANAKA, Tomoaki KODAMA, Mutsumi MORITA, Masayuki KANECHIKA, Masayuki MAKISHIMA, Yasuro KINGO, Toshiyuki SUGAWARA