Abstract: A quantum bit device according to the present invention includes a first quantum bit substrate 10 which includes a first superconductive wiring 13 disposed to have a magnetically coupled portion with a first superconductive magnetic flux quantum bit 14 on a surface thereof, a second quantum bit substrate 11 which includes a second superconductive wiring 13 disposed to have a magnetically coupled portion with a second superconductive magnetic flux quantum bit 14 on a surface thereof, and a base substrate 12 which includes a third superconductive wiring 13 configured by two superconductive wirings extending parallel to each other on a surface thereof.

Abstract: A quantum bit device according to the present invention includes a first quantum bit substrate 10 which includes a first superconductive wiring 13 disposed to have a magnetically coupled portion with a first superconductive magnetic flux quantum bit 14 on a surface thereof, a second quantum bit substrate 11 which includes a second superconductive wiring 13 disposed to have a magnetically coupled portion with a second superconductive magnetic flux quantum bit 14 on a surface thereof, and a base substrate 12 which includes a third superconductive wiring 13 configured by two superconductive wirings extending parallel to each other on a surface thereof.

Abstract: In a superconducting random access memory according to this invention, drive lines such as a word line and a bit line, and a sense line for accessing a memory cell array are each divided into a plurality of blocks and an in-block signal propagation circuit having a level-logic drive circuit and sense circuit each with high load drive capability is used for signal propagation in each of the blocks. Further, for long-distance signal propagation between the blocks, superconducting passive transmission lines formed by single flux quantum (SFQ) devices and capable of high-speed operation are used. As a result, the high-speed operation as a whole is enabled. It is possible to additionally use splitters or confluence buffers and latch circuits and, further, a binary tree structure may be adopted.

Abstract: In a superconducting random access memory according to this invention, drive lines such as a word line and a bit line, and a sense line for accessing a memory cell array are each divided into a plurality of blocks and an in-block signal propagation circuit having a level-logic drive circuit and sense circuit each with high load drive capability is used for signal propagation in each of the blocks. Further, for long-distance signal propagation between the blocks, superconducting passive transmission lines formed by single flux quantum (SFQ) devices and capable of high-speed operation are used. As a result, the high-speed operation as a whole is enabled. It is possible to additionally use splitters or confluence buffers and latch circuits and, further, a binary tree structure may be adopted.

Abstract: To provide a planarization method which does not depend upon the size and the density of a wiring pattern and in which a reliable wiring system and a Josephson device can be formed and wiring structure, an insulation layer is planarized by forming a reversal pattern mask of wiring and selectively removing the insulation layer on the wiring.

Abstract: In a sampler for use in measuring a waveform of an electric signal, a measurement target current is given as the electric signal to a sampler chip 11 and is also used to produce a trigger current Itr for determining measurement timing on the sampler chip. A comparator 20 compares a sum of a feedback current, a current derived from the measurement target current, and the trigger current Itr with a threshold value to produce an SFQ pulse when the sum exceeds the threshold value. The SFQ pulse produced by the comparator is observed or counted for a predetermined duration to measure the waveform of the electric signal.

Abstract: To provide a planarization method which does not depend upon the size and the density of a wiring pattern and in which a reliable wiring system and a Josephson device can be formed and wiring structure, an insulation layer is planarized by forming a reversal pattern mask of wiring and selectively removing the insulation layer on the wiring.

Abstract: In a sampler for use in measuring a waveform of an electric signal, a measurement target current is given as the electric signal to a sampler chip 11 and is also used to produce a trigger current Itr for determining measurement timing on the sampler chip. A comparator 20 compares a sum of a feedback current, a current derived from the measurement target current, and the trigger current Itr with a threshold value to produce an SFQ pulse when the sum exceeds the threshold value. The SFQ pulse produced by the comparator is observed or counted for a predetermined duration to measure the waveform of the electric signal.

Abstract: A superconducting current measuring circuit is provided with a detection loop through which a current flows by the influence of a magnetic field generated by a measurement target current. The detection loop contains a superconductor. The superconducting current measuring circuit is also provided with a superconducting sampler circuit for measuring the current flowing through the detection loop.

Abstract: In a superconducting contact structure between an oxide superconductor and a metal superconductor, the oxide superconductor has a recess in a surface which is in contact with the metal superconductor.