Abstract: An eco-friendly power source, such as a battery module for a transportation vehicle includes a first sub-module and a second sub-module each including a plurality of battery cells; a lower cover supporting the first sub-module and the second sub-module; a connection member coupled to the first sub-module and the second sub-module, respectively; and a cooling plate coupled to the lower cover and forming a flow path through which a refrigerant can flow, wherein at least a portion of the flow path is disposed to oppose the connection member with the lower cover interposed therebetween.

Abstract: A semiconductor light emitting device includes a substrate; a light emitting structure and a Zener diode structure disposed to be spaced apart from each other on the substrate, and including a first semiconductor layer and a second semiconductor layer, respectively; and a common, integrally formed, electrode electrically connected to the first semiconductor layer of the light emitting structure and the second semiconductor layer of the Zener diode structure. At least a portion of the Zener diode formed by the Zener diode structure is disposed below the common electrode.

Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and a selective transmission-reflection layer disposed on the light-emitting structure and including a plurality of dielectric layers having different optical thicknesses alternately stacked at least once. The sum of an optical thickness of a dielectric layer having a maximum optical thickness and an optical thickness of a dielectric layer having a minimum optical thickness is in the range of 0.75 to 0.80.

Abstract: A semiconductor light emitting device may include a substrate having a first surface and a second surface, the second surface being opposite to the first surface; a light emitting structure disposed on the first surface of the substrate and including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer; and a reflector disposed on the second surface of the substrate and including a low refractive index layer and a Bragg layer, wherein the Bragg layer includes a plurality of alternately stacked layers having different refractive indices, and wherein a refractive index of the low refractive index layer is lower than a refractive index of the Bragg layer.

Abstract: A semiconductor light-emitting device having improved light extraction efficiency provided by a reflector including a separation layer. The separation layer may be interposed between first and second Bragg layers including one or more pairs of refractive layers having different refractive indices, the first pairs being stacked on one side of the separation layer and the second pairs being stacked on an opposing side of the separation layer.

Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and a selective transmission-reflection layer disposed on the light-emitting structure and including a plurality of dielectric layers having different optical thicknesses alternately stacked at least once. The sum of an optical thickness of a dielectric layer having a maximum optical thickness and an optical thickness of a dielectric layer having a minimum optical thickness is in the range of 0.75 to 0.80.

Abstract: A method of manufacturing a semiconductor light emitting device is performed on a light emitting structure including a sequential stack of a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. The second conductivity-type semiconductor layer and the active layer are mesa-etched to expose a portion of the first conductivity-type semiconductor layer therethrough. A conductive layer is formed on the second conductivity-type semiconductor layer and the portion of the first conductivity-type semiconductor layer exposed by mesa-etching. In turn, the conductive layer is dry etched such that an upper surface of the first conductivity-type semiconductor layer is partially etched to have uneven portions formed thereon. The resulting semiconductor light emitting device has improved external light extraction efficiency while being easily manufactured.

Abstract: A semiconductor light emitting device includes a substrate; a light emitting structure and a Zener diode structure disposed to be spaced apart from each other on the substrate, and including a first semiconductor layer and a second semiconductor layer, respectively; and a common, integrally formed, electrode electrically connected to the first semiconductor layer of the light emitting structure and the second semiconductor layer of the Zener diode structure. At least a portion of the Zener diode formed by the Zener diode structure is disposed below the common electrode.

Abstract: A semiconductor light emitting device includes a substrate, a first structure, a second structure, first and second n-electrodes, and first and second p-electrodes. The first structure is disposed on the substrate and includes a first n-type semiconductor layer, a first active layer, and a first p-type semiconductor layer. The second structure is spaced apart from the first structure on the substrate and includes a second n-type semiconductor layer, a second active layer and a second p-type semiconductor layer. The first n-electrode and the first p-electrode are connected to the first n-type semiconductor layer and the first p-type semiconductor layer, respectively. The second n-electrode and the second p-electrode are connected to the second n-type semiconductor layer and the second p-type semiconductor layer, respectively. The second n-electrode is spaced apart from the second active layer to encompass the second active layer.

Abstract: A method of manufacturing a semiconductor light emitting device is performed on a light emitting structure including a sequential stack of a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. The second conductivity-type semiconductor layer and the active layer are mesa-etched to expose a portion of the first conductivity-type semiconductor layer therethrough. A conductive layer is formed on the second conductivity-type semiconductor layer and the portion of the first conductivity-type semiconductor layer exposed by mesa-etching. In turn, the conductive layer is dry etched such that an upper surface of the first conductivity-type semiconductor layer is partially etched to have uneven portions formed thereon. The resulting semiconductor light emitting device has improved external light extraction efficiency while being easily manufactured.

Abstract: A light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer, and first and second electrodes electrically connected to the first and second semiconductor layers, respectively. The second electrode includes a reflective pad portion, a transparent electrode layer, a reflective finger portion and an electrode pad portion. The reflective pad portion is disposed in a region of an upper surface of the second semiconductor layer. The transparent electrode layer is disposed on the second semiconductor layer and has an opening encompassing the reflective pad portion such that the transparent electrode layer is not in contact with the reflective pad portion. The reflective finger portion extends from the reflective pad portion and has at least a portion thereof disposed on the transparent electrode layer. The electrode pad portion covers the reflective pad portion to be in contact with the transparent electrode layer.

Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer, an insulating region formed along the outer edges of an upper surface of the second conductivity-type semiconductor layer, and an ohmic-electrode layer disposed on the second conductivity-type semiconductor layer.

Abstract: A light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer, and first and second electrodes electrically connected to the first and second semiconductor layers, respectively. The second electrode includes a reflective pad portion, a transparent electrode layer, a reflective finger portion and an electrode pad portion. The reflective pad portion is disposed in a region of an upper surface of the second semiconductor layer. The transparent electrode layer is disposed on the second semiconductor layer and has an opening encompassing the reflective pad portion such that the transparent electrode layer is not in contact with the reflective pad portion. The reflective finger portion extends from the reflective pad portion and has at least a portion thereof disposed on the transparent electrode layer. The electrode pad portion covers the reflective pad portion to be in contact with the transparent electrode layer.

Abstract: The present invention is directed to a beauty mask having a circulator using a thermoelectric element, more specifically the beauty mask in which a urethane pack filled with silicon oil is attached on inner surface of a face mask, a tube allowing the silicon oil cooled or heated by the thermoelectric element to flow in or out the pack is connected to the urethane pack, and the urethane pack is cooled or heated according to a temperature of the inflow silicon oil and provides cold and hot packing effect to the face, so that a metabolism of a face skin is facilitated, the resilience of the skin is improved, and wrinkle can be eliminated.