Abstract: A magnetic field sensor and an associated method use one or more magnetoresistance elements driven with an AC mixing current and experiencing an AC mixing magnetic field to generate a DC voltage signal or a DC voltage signal component related to a slope of a transfer curve of the one or more magnetoresistance elements.

Abstract: A device for prosthetic vision rehabilitation, which includes a scleral explant with a shape that is suitable for being in contact with at least one portion of the sclera of an eye, and at least one inducer arranged on the scleral explant.

Abstract: A magnetoresistance element can have a substrate; a ferromagnetic seed layer consisting of a binary alloy of NiFe; and a first nonmagnetic spacer layer disposed under and directly adjacent to the ferromagnetic seed layer and proximate to the substrate, wherein the first nonmagnetic spacer layer is comprised of Ta or Ru. A method fabricating of fabricating a magnetoresistance element can include depositing a seed layer structure over a semiconductor substrate, wherein the depositing the seed layer structure includes depositing at least a ferromagnetic seed layer over the substrate. The method further can further include depositing a free layer structure over the seed layer structure, wherein the depositing the ferromagnetic seed layer comprises depositing the ferromagnetic seed layer in the presence of a motion along a predetermined direction and in the presence of a predetermined magnetic field having the same predetermined direction.

Abstract: A magnetic field sensor and an associated method use one or more magnetoresistance elements driven with an AC mixing current and experiencing an AC mixing magnetic field to generate a DC voltage signal or a DC voltage signal component related to a slope of a transfer curve of the one or more magnetoresistance elements.

Abstract: A magnetoresistance element has a double pinned arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.

Abstract: A magnetoresistance element has a seed layer that promotes an increased magnetic anisotropy of layers of the magnetoresistance element above the seed layer structure.

Abstract: A magnetoresistance element has a double pinned arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.

Abstract: The invention relates to an integrated sensor, including terminals (1, 2) for connection to an electric generator, said terminals being connected to a metal measuring line (4, 5) in which a current proportional to the voltage or current of the generator to be measured flows, and magnetoresistors (31, 32, 33, 34). The metal measuring line includes elongate and parallel sections (4, 5) in which the current flows in opposite directions, said sections being connected to a portion (3) for closing the metal measuring line (3, 4, 5), which is arranged on a galvanic isolation layer (8) that is in turn arranged on an integrated circuit portion including the magnetoresistors (31, 32, 33, 34), each of which have a sensitive portion that is vertically adjacent to one of the elongate sections (4, 5). The sensor can be integrated into a diagnostic system.

Abstract: The invention relates to an integrated sensor, including terminals (1, 2) for connection to an electric generator, said terminals being connected to a metal measuring line (4, 5) in which a current proportional to the voltage or current of the generator to be measured flows, and magnetoresistors (31, 32, 33, 34). The metal measuring line includes elongate and parallel sections (4, 5) in which the current flows in opposite directions, said sections being connected to a portion (3) for closing the metal measuring line (3, 4, 5), which is arranged on a galvanic isolation layer (8) that is in turn arranged on an integrated circuit portion including the magnetoresistors (31, 32, 33, 34), each of which have a sensitive portion that is vertically adjacent to one of the elongate sections (4, 5). The sensor can be integrated into a diagnostic system.

Abstract: The method for cancellation of low frequency noise in a magneto-resistive mixed sensor (1) comprising at least a superconducting loop with at least one constriction and at least one magneto-resistive element (6) comprises a set of measuring steps with at least one measuring step being conducted with the normal running of the mixed sensor and at least another measuring step being conducted whilst an additional super-current is temporarily injected in the at least one constriction of the at least one superconducting loop of the mixed sensor (1) up to a critical super-current of the constriction so that the result of the at least another measuring step is used as a reference level of the at least one magneto-resistive element (6).

Abstract: A device comprises a mixed sensor design with at least one superconducting loop (1) containing at least one constriction (3) and a magneto-resistive element (2) located next to the constriction (3). The device contains at least one heating element (5) that allows switching at sufficiently high frequency of at least one part of the superconducting loop (1) above its critical temperature, such that the super-current flowing through the at least one constriction (3) containing the at least one magneto-resistive element (2) is temporarily suppressed.

Abstract: The system for measuring high currents or magnetic fields using a magnetoresistive sensor (80) includes a device for applying a known predetermined magnetic bias field Hbias in a direction such that it has a non-zero component of the field perpendicular to a detection direction of the magnetoresistive sensor (80) that also corresponds to a direction of anisotropy of a layer of the magnetoresistive sensor, a device for measuring the variation in resistance of the magnetoresistive sensor (80) and means for determining the external magnetic field H to be measured from the measured resistance variation, the resistance of the sensor being subjected to a monotonic variation function.

Abstract: The system for measuring a magnetic resonance signal within a sample (4) placed in a static external magnetic field (H) includes an excitation device (1 to 3, 6 to 10) for applying high-intensity radio-frequency pulses at a predetermined emission frequency fe in a measurement zone containing the sample (4). The excitation device includes an excitation coil (3) tuned to the predetermined emission frequency fe and disposed in the vicinity of the sample (4) in such a way as to produce an electromagnetic field essentially perpendicular to the static external magnetic field (H). The system further includes at least a superconductive-magnetoresistive hybrid sensor (5) including a superconductive loop having a constriction adapted to increase significantly the current density and at least a magnetoresistive sensor placed in the immediate vicinity of said constriction (72) and being separated therefrom by an insulative deposit.

Abstract: The method for cancellation of low frequency noise in a magneto-resistive mixed sensor (1) comprising at least a superconducting loop with at least one constriction and at least one magneto-resistive element (6) comprises a set of measuring steps with at least one measuring step being conducted with the normal running of the mixed sensor and at least another measuring step being conducted whilst an additional super-current is temporarily injected in the at least one constriction of the at least one superconducting loop of the mixed sensor (1) up to a critical super-current of the constriction so that the result of the at least another measuring step is used as a reference level of the at least one magneto-resistive element (6).

Abstract: A device comprises a mixed sensor design with at least one superconducting loop (1) containing at least one constriction (3) and a magneto-resistive element (2) located next to the constriction (3). The device contains at least one heating element (5) that allows switching at sufficiently high frequency of at least one part of the superconducting loop (1) above its critical temperature, such that the super-current flowing through the at least one constriction (3) containing the at least one magneto-resistive element (2) is temporarily suppressed.

Abstract: The system for measuring high currents or magnetic fields using a magnetoresistive sensor (80) includes a device for applying a known predetermined magnetic bias field Hbias in a direction such that it has a non-zero component of the field perpendicular to a detection direction of the magnetoresistive sensor (80) that also corresponds to a direction of anisotropy of a layer of the magnetoresistive sensor, a device for measuring the variation in resistance of the magnetoresistive sensor (80) and means for determining the external magnetic field H to be measured from the measured resistance variation, the resistance of the sensor being subjected to a monotonic variation function.

Abstract: The system for measuring a magnetic resonance signal within a sample (4) placed in a static external magnetic field (H) includes an excitation device (1 to 3, 6 to 10) for applying high-intensity radio-frequency pulses at a predetermined emission frequency fe in a measurement zone containing the sample (4). The excitation device includes an excitation coil (3) tuned to the predetermined emission frequency fe and disposed in the vicinity of the sample (4) in such a way as to produce an electromagnetic field essentially perpendicular to the static external magnetic field (H). The system further includes at least a superconductive-magnetoresistive hybrid sensor (5) including a superconductive loop having a constriction adapted to increase significantly the current density and at least a magnetoresistive sensor placed in the immediate vicinity of said constriction (72) and being separated therefrom by an insulative deposit.