Abstract: A substrate processing apparatus includes: a process chamber including a chamber lid and a chamber body to provide a reaction space therein; a source electrode in the process chamber; a radio frequency (RF) power source for supplying an RF power to the source electrode; a feeding line connecting the source electrode and the RF power source; and a shielding part wrapping the feeding line to block an electric field.

Abstract: A gas distribution device for a substrate treating apparatus includes a plurality of plasma source electrodes having a first side surface; a plurality of plasma ground electrodes having a second side surface facing the first side surface, the plurality of plasma ground electrodes being alternately arranged with the plurality of plasma source electrodes; and a first gas providing part disposed at each plasma source electrode and including a first space, a plurality of first through-holes in communication with the first space for providing a first process gas between one of the plurality of plasma source electrodes and a corresponding ones of the plurality of plasma ground electrodes, and a first discharging portion at the first side surface.

Abstract: A substrate processing apparatus includes: a process chamber including a chamber lid and a chamber body to provide a reaction space therein; a source electrode in the process chamber; a radio frequency (RF) power source for supplying an RF power to the source electrode; a feeding line connecting the source electrode and the RF power source; and a shielding part wrapping the feeding line to block an electric field.

Abstract: A gas distribution device for a substrate treating apparatus includes a plurality of plasma source electrodes having a first side surface; a plurality of plasma ground electrodes having a second side surface facing the first side surface, the plurality of plasma ground electrodes being alternately arranged with the plurality of plasma source electrodes; and a first gas providing part disposed at each plasma source electrode and including a first space, a plurality of first through-holes in communication with the first space for providing a first process gas between one of the plurality of plasma source electrodes and a corresponding ones of the plurality of plasma ground electrodes, and a first discharging portion at the first side surface.

Abstract: A substrate processing apparatus includes a process chamber having a chamber lid and a chamber body to provide a reaction space and a gas distributing means including a plate and an injection part in the process chamber. The injection part includes a plurality of through holes in the plate and a discharge portion capable of being in fluid communication with the plurality of through holes. The discharge portion has a matrix shape and provides a space where a plasma is discharged. The apparatus additionally includes a susceptor in the process chamber. The susceptor faces the gas distributing means.

Abstract: An apparatus for processing a substrate includes: a process chamber providing a reaction space by a combination of a lid and a body; a susceptor in the reaction space and having a substrate thereon; a plurality of plasma source electrodes over the reaction space; a plurality of first lower protruding portions under the lid; and a plurality of first gas injecting means corresponding to the plurality of plasma source electrodes and a plurality of second gas injecting means alternately disposed with the plurality of first gas injecting means.

Abstract: A substrate treatment apparatus includes a process chamber providing a reaction region and including a body and a lid, the lid having a plurality of openings, a plurality of insulating plates sealing the plurality of openings, respectively, a plurality of antennas over the plurality of insulating plates, respectively, a gas injection unit over the lid and the plurality of insulating plates, and a substrate holding unit in the reaction region, wherein a substrate is disposed on the substrate holding unit.

Abstract: A focusing apparatus and a lithography system using the same capable of adjusting a uniformity of an electromagnetic field by moving a portion of a magnetic field generator. The focusing apparatus may control a path of an electron beam generated from an electron-beam emitter of the lithography system. In the focusing apparatus, a uniformity of the magnetic field in the vacuum chamber may be adjusted through movement of the portion of the magnetic field generator with respect to the vacuum chamber.

Abstract: An etching apparatus comprises a chamber; a substrate supporter in the chamber; a substrate disposed on the substrate and having one of a notch zone and a flat zone, the substrate having a rim of a circular shape except in the one of the notch zone and the flat zone, wherein the rim of the substrate has a dented shape in the notch zone and a chord shape in the flat zone; a substrate-screening unit having a substantially same shape as the substrate and disposed over the substrate, the substrate-screening unit having a portion corresponding to the one of the notch zone and the flat zone, wherein the substrate-screening unit has a first diameter smaller than or equal to a second diameter of the substrate; a gas injection means supplying gases onto a periphery of the substrate; and a power supply unit supplying an RF (radio frequency) power into the chamber.

Abstract: An etching apparatus includes a chamber, a substrate support in the chamber, a substrate-screening unit over the substrate support, wherein a diameter of the substrate-screening unit is smaller than as or equals to a substrate, a gas injection means injecting gases onto a periphery of the substrate, a power supply unit providing an RF (radio frequency) power into the chamber, and a plurality of sensors sensing intervals between the substrate support and the substrate-screening unit.

Abstract: A focusing apparatus and a lithography system using the same capable of adjusting a uniformity of an electromagnetic field by moving a portion of a magnetic field generator. The focusing apparatus may control a path of an electron beam generated from an electron-beam emitter of the lithography system. In the focusing apparatus, a uniformity of the magnetic field in the vacuum chamber may be adjusted through movement of the portion of the magnetic field generator with respect to the vacuum chamber.