Abstract: A light emitting diode includes a substrate tilted toward first and second directions simultaneously, a first cladding layer formed with a semiconductor material of a first conductive type on the substrate, an active layer formed on the first cladding layer, and a second cladding layer formed with a semiconductor material of a second conductive type on the active layer, wherein concavo-convexes are formed on the interfaces of the first cladding layer, the second cladding layer, and the active layer.

Abstract: A growing method of a SiC single crystal includes the steps of thermal treatment of a high purity SiC source for decreasing a specific surface area and increasing a ratio of a-phase and making a mole fraction of C greater than that of Si in the source, providing the SiC source into a crucible, arranging a SiC seed in the crucible, and growing the SiC single crystal by heating the SiC source.

Abstract: A light emitting diode includes a substrate tilted toward first and second directions simultaneously, a first cladding layer formed with a semiconductor material of a first conductive type on the substrate, an active layer formed on the first cladding layer, and a second cladding layer formed with a semiconductor material of a second conductive type on the active layer, wherein concavo-convexes are formed on the interfaces of the first cladding layer, the second cladding layer, and the active layer.

Abstract: Disclosed is a wire-type corona charger having a wire electrode disposed between ground electrode plates. The wire electrode is supported by the ends of the plurality of wire electrode supporters which are so arranged that their ends have a curvature equal to arcuately-shaped upper edge of the ground electrode plates. The curvature coincides with one of the curvatures of the horizontal axis and the vertical axis of the interior surface of the panel faceplate, while the charger is pivoted along the other curvature of the faceplate. The charger can uniformly charge the photoconductive layer and improves the charging efficiency.

Abstract: An electrostatic thermal bonding method for bonding a pair of glass substrates, is capable of solving the problems such as a contamination of a device and incomplete vacuum packaging due to gas generated during the bonding of glass substrates utilizing a conventional epoxy or frit. The electrostatic thermal bonding method uses a silicon-glass bonding mechanism. First, a silicon thin film is deposited on a metal thin film formed on a side of one glass substrate, and the two glass substrates are brought face to face with each other by bringing the silicon thin film into contact with the surface of the other glass substrate. A predetermined direct current voltage is applied between the metal thin film and the other glass substrate under a predetermined temperature, thereby the bonding between glass substrates is performed. In the glass-glass bonding method utilizing the silicon thin film, the direct current voltage in the range of 0 to 1000V is applied under a bonding temperature between 100 to 500° C.

Abstract: A field emission display and a method for fabricating the same are disclosed. The method includes the steps of: forming a silicon mold; growing a diamond on the silicon mold, to form a diamond tip; forming a conductive layer on the diamond tip; bonding a first substrate to the conductive layer; removing the silicon mold; forming a gate insulating layer and gate electrode on the diamond tip; and etching the gate electrode and gate insulating layer to expose an electron emission portion of the tip, and thereby form a gate hole. By doing so, the operation voltage is reduced, compared with the diode-type display, and high-responsibility field emission display can be realized by applying (-) or (+) voltage to the gate electrode.

Abstract: In the present invention, the vacuum packaging of a field emission display (FED) is achieved in a high vacuum apparatus using a glass-to-glass bonding. The apparatus may eliminate the problems encountered in the conventional art in which a ventilation tube is used, so that vacuum degree of the interior of panels of the FED is affected (decreased) by the gases generated in sealing the ventilation tube. Furthermore, in the prior art, a part of the ventilation tube remains on the panel of the FED for thereby increasing the thickness of the panels, and the ventilating of gases is not effectively performed by the extension of the tube and a big size hole.

Abstract: A field emission display device and a fabrication method thereof, by which a vacuum sealing can be simple, and electric and optical characteristics between pixels can be improved by achieving a device package by means of a junction between substrates in vacuum without a spacer, which includes a semiconductor substrate having a groove having a predetermined depth; an n-well formed on the semiconductor substrate under the bottom of the groove; an emitter formed on the n-well; an insulation film formed on a portion of the semiconductor substrate, in which the groove is not formed; a transparent electrode bonded to the upper portion of the insulation film; a light emitting layer arranged on the upper portion of the emitter and formed within the transparent electrode; and a glass substrate formed on the transparent electrode.

Abstract: An improved field emission display device fabrication method which adopts both a silicon wafer direct bonding method and a mold method so as to fabricate an improved field emission display device, which includes the steps of a first step which forms a tip array by a molding method; and a second step which bonds the tip array to a second semiconductor substrate.

Abstract: An improved white-light emitting electroluminescent display device and a manufacturing method thereof capable of advantageously generating a light having a red, blue, and green wave lengths within a unique material, which includes a substrate; a lower electrode disposed on the substrate; a first dielectric layer disposed on the lower electrode; a ZnS:Pr,Mn light-emitting layer disposed on the first dielectric layer; a second dielectric layer; and an upper electrode disposed on the second dielectric layer. In addition, a fabrication method thereof includes the steps of forming a first dielectric layer on an upper electrode; forming a light-emitting layer on the first dielectric layer by depositing a ZnS:Pr,Mn luminescent material made of Pr of 1.4.about.0.5 mol % and Mn of 0.1.about.0.01 mol % on a ZnS host material; forming a second dielectric layer on the light-emitting layer; and forming a lower electrode on the second dielectric layer.

Abstract: An improved white-lite emitting electroluminescent display capable of emitting a light having a red, blue, and green wave length in a single material and having a buffer layer of Si.sub.x N.sub.y between a dielectric layer of BaTa.sub.2 O.sub.6 and a light-emitting layer, which includes a substrate; a lower dielectric layer of Bata.sub.2 O.sub.6 formed on a transparent electrode; a light-emitting layer of SrS:Pr,F formed on the lower dielectric layer; a buffer layer of Si.sub.x N.sub.y formed on the light-emitting layer; a upper dielectric layer of BaTa.sub.2 O.sub.6 formed on the buffer layer; and an upper electrode formed on the upper dielectric layer, and further includes the steps of a first step which forms a lower electrode on a substrate; a second step which forms a light-emitting layer of SrS:Pr.F on a lower dielectric layer; a third step which forms a buffer layer of Si.sub.x N.sub.y on the light-emitting layer; a fourth step which forms a upper dielectric layer of BaTa.sub.2 O.sub.

Abstract: A method for fabricating a luminant for a field emission display fabricated through PVD is disclosed. The method includes the steps of: forming a ZnO:Zn luminescent thin film on a glass substrate through PVD; and forming a conductive thin film on the ZnO:Zn luminescent thin film, to thereby change the luminescence threshold, brightness and luminescent color suitable for the operation characteristics of the emitter in a predetermined range, by controlling the thickness of the luminescent layer, temperature and ambient of heat treatment of the luminant.

Abstract: A micro-tip for emitting an electric field and a method for fabricating the same are disclosed. The method includes the steps of: forming a silicon mould; forming a functional layer on the silicon mould, and then forming a tip on the functional layer; forming a conductive thin film on one side of the tip; bonding a substrate to the conductive thin film; and removing the silicon mould, to thereby obtain the structural advantages of the semiconductor tip as well as the advantages of the material for functional layer, and realize the micro-tip for an emitting electric field having high reliability.

Abstract: A fabrication method for a test piece for observing non-contact regions in a pair of bonded semiconductor substrates includes thinning one substrate of a pair of bonded semiconductor substrates, grade-polishing the thinned semiconductor substrate and the bonded semiconductor substrates to have a predetermined graded angle relative their bonded surfaces, and dry-etching an area around the bonded surfaces of the grade-polished semiconductor substrates to reveal faults. With the thusly fabricated test piece, micro non-contact regions can be simply observed and crystal faults existing on the bonded surfaces as well as in the micro non-contact regions can be easily detected.

Abstract: A circuit for driving an AC TFEL device which is a complete solid luminescence element, capable of generating positive and negative AC voltages from a single DC voltage by utilizing a relative potential difference and thereby providing a compact voltage supply unit required for driving the AC TFEL device. A circuit is also provided which is constructed to reduce the number of operating voltages required in the refresh drive method and the scan inversion symmetric drive method upon driving the matrix of the AC TFEL device by using a relative potential generating circuit. By employing such a circuit, it is possible to simply provide a voltage supply circuit required in a portable display system using the AC TFEL device and supply a voltage required for the refresh driving and the scanning sequence inversion driving by using only one clock control signal.