Abstract: The present invention relates to a substrate structure in which organic-inorganic hybrid thin films are laminated and a method for preparing the same and more specifically to a substrate structure in which organic-inorganic hybrid thin films are laminated that can be used for light emitters, display devices and solar cell devices wherein the organic-inorganic hybrid thin film including a stable new functional group, an inorganic precursor and an organic precursor are alternately used to afford stability in air and a method for preparing the same.

Abstract: A touch screen panel includes first electrode patterns disposed in a first direction, first connection patterns electrically connecting the first electrode patterns, second electrode patterns disposed in a second direction intersecting the first direction and insulated from the first electrode patterns, insulating patterns disposed on the first connection patterns, and second connection patterns disposed on the insulating patterns and electrically connecting the second electrode patterns, in which at least one of the first electrode patterns, the first connection patterns, the second electrode patterns, and the second connection patterns include a first polymer layer including a conductive material infiltrated therein, and the insulating patterns comprise a second polymer layer comprising a dielectric material infiltrated therein.

Abstract: The present disclosure relates to a hybrid organic-inorganic thin film producing method including an interlayer connection between an inorganic cross-linked layer and an organic polymer through a molecular layer deposition (MLD) method, a hybrid organic-inorganic thin film produced by the producing method, and an organic electronic device and a thin film transistor containing the hybrid organic-inorganic thin film.

Abstract: The present disclosure relates to a hybrid organic-inorganic thin film producing method including an interlayer connection between an inorganic cross-linked layer and an organic polymer through a molecular layer deposition (MLD) method, a hybrid organic-inorganic thin film produced by the producing method, and an organic electronic device and a thin film transistor containing the hybrid organic-inorganic thin film.

Abstract: The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and the metal wiring, and a metal wiring thereof. Since a thin film transistor substrate of the present invention comprises three-dimensionally cross-linked self-assembled monolayers between the Si surface and the metal wiring, it has good adhesion ability and anti-diffusion ability.

Abstract: The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and the metal wiring, and a metal wiring thereof. Since a thin film transistor substrate of the present invention comprises three-dimensionally cross-linked self-assembled monolayers between the Si surface and the metal wiring, it has good adhesion ability and anti-diffusion ability.

Abstract: The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and the metal wiring, and a metal wiring method thereof. Since a thin film transistor substrate of the present invention comprises three-dimensionally cross-linked self-assembled monolayers between the Si surface and the metal wiring, it has good adhesion ability and anti-diffusion ability.

Abstract: The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and the metal wiring, and a metal wiring method thereof. Since a thin film transistor substrate of the present invention comprises three-dimensionally cross-linked self-assembled monolayers between the Si surface and the metal wiring, it has good adhesion ability and anti-diffusion ability.