Patents by Inventor Myungnam LEE

Myungnam LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • NONVOLATILE MEMORY DEVICE AND METHOD OF DETECTING DEFECTIVE MEMORY CELL BLOCK OF NONVOLATILE MEMORY DEVICE
    Publication number: 20240021255
    Abstract: A method of detecting, by a nonvolatile memory system, a defective memory cell block from among memory cell blocks, includes performing, after performing an erase operation, a read operation on at least some memory cells included in a target memory cell block based on an off-cell detection voltage that is different from a read reference voltage that distinguishes an off-cell on which no data is written from an on-cell on which data is written; counting a number of hard off-cells having a higher threshold voltage than the off-cell detection voltage from among the memory cells based on a result of performing the read operation; and identifying whether the target memory cell block is a defective memory cell block based on the number of counted hard off-cells.
    Type: Application
    Filed: July 21, 2023
    Publication date: January 18, 2024
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Myungnam Lee, Daehan Kim, Wontaeck Jung
  • Nonvolatile memory device and method of detecting defective memory cell block of nonvolatile memory device
    Patent number: 11763901
    Abstract: A method of detecting, by a nonvolatile memory system, a defective memory cell block from among memory cell blocks, includes performing, after performing an erase operation, a read operation on at least some memory cells included in a target memory cell block based on an off-cell detection voltage that is different from a read reference voltage that distinguishes an off-cell on which no data is written from an on-cell on which data is written; counting a number of hard off-cells having a higher threshold voltage than the off-cell detection voltage from among the memory cells based on a result of performing the read operation; and identifying whether the target memory cell block is a defective memory cell block based on the number of counted hard off-cells.
    Type: Grant
    Filed: August 9, 2021
    Date of Patent: September 19, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Myungnam Lee, Daehan Kim, Wontaeck Jung
  • NONVOLATILE MEMORY DEVICE AND METHOD OF DETECTING DEFECTIVE MEMORY CELL BLOCK OF NONVOLATILE MEMORY DEVICE
    Publication number: 20220051738
    Abstract: A method of detecting, by a nonvolatile memory system, a defective memory cell block from among memory cell blocks, includes performing, after performing an erase operation, a read operation on at least some memory cells included in a target memory cell block based on an off-cell detection voltage that is different from a read reference voltage that distinguishes an off-cell on which no data is written from an on-cell on which data is written; counting a number of hard off-cells having a higher threshold voltage than the off-cell detection voltage from among the memory cells based on a result of performing the read operation; and identifying whether the target memory cell block is a defective memory cell block based on the number of counted hard off-cells.
    Type: Application
    Filed: August 9, 2021
    Publication date: February 17, 2022
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Myungnam LEE, Daehan KIM, Wontaeck JUNG