Patents by Inventor Nabil Chhaimi

Nabil Chhaimi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF RECYCLING AN EPITAXIED DONOR WAFER
    Publication number: 20100167500
    Abstract: A method for forming a semiconductor structure that includes a thin layer of semiconductor material on a receiver wafer is disclosed. The method includes removing a thickness of material from a donor wafer, which comprises a support substrate and an epitaxial layer, for surface preparation and transferring a portion of the epitaxial layer from the donor wafer to the receiver wafer. The thickness removed during the surface preparation is adapted to enable formation of a new semiconductor structure from the remaining epitaxial portion of the donor wafer.
    Type: Application
    Filed: March 5, 2010
    Publication date: July 1, 2010
    Inventors: Nabil Chhaimi, Eric Guiot, Patrick Reynaud, Bruno Ghyselen, Cécile Aulnette, Bénédite Osternaud, Takeshi Akatsu, Yves-Matthieu Le Vaillant
  • METHOD OF RECYCLING AN EPITAXIED DONOR WAFER
    Publication number: 20090325362
    Abstract: A method for forming a semiconductor structure that includes a thin layer of semiconductor material on a receiver wafer is disclosed. The method includes removing a thickness of material from a donor wafer, which comprises a support substrate and an epitaxial layer, for surface preparation and transferring a portion of the epitaxial layer from the donor wafer to the receiver wafer. The thickness removed during the surface preparation is adapted to enable formation of a new semiconductor structure from the remaining epitaxial portion of the donor wafer.
    Type: Application
    Filed: July 15, 2009
    Publication date: December 31, 2009
    Inventors: Nabil Chhaimi, Eric Guiot, Patrick Reynaud, Bruno Ghyselen, Cécile Aulnette, Bénédicte Osternaud, Takeshi Akatsu, Bruce Faure
  • Method of recycling an epitaxied donor wafer
    Publication number: 20070087526
    Abstract: A method for forming a semiconductor structure comprising a thin layer of semiconductor material on a receiver wafer is disclosed. The method comprises removing a thickness of material from a donor wafer, which comprises a support substrate and an epitaxial layer, for surface preparation and transferring a portion of the epitaxial layer from the donor wafer to the receiver wafer. The thickness removed during the surface preparation is adapted to enable formation of a new semiconductor structure from the remaining epitaxial portion of the donor wafer.
    Type: Application
    Filed: March 21, 2006
    Publication date: April 19, 2007
    Inventors: Nabil Chhaimi, Eric Guiot, Patrick Reynaud