Patents by Inventor Nader Montazernezam Kalkhoran

Nader Montazernezam Kalkhoran has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8003551
    Abstract: The present invention provides means and methods for producing surface-activated semiconductor nanoparticles suitable for in vitro and in vivo applications that can fluoresce in response to light excitation. Semiconductor nanostructures can be produced by generating a porous layer in semiconductor substrate comprising a network of nanostructures. Prior or subsequent to cleavage from the substrate, the nanostructures can be activated by an activation means such as exposing their surfaces to a plasma, oxidation or ion implantation. In some embodiments, the surface activation renders the nanostructures more hydrophilic, thereby facilitating functionalization of the nanoparticles for either in vitro or in vivo use.
    Type: Grant
    Filed: April 27, 2009
    Date of Patent: August 23, 2011
    Assignee: Spire Corporation
    Inventors: Nader Montazernezam Kalkhoran, James G. Moe, Kurt J. Linden, Marisa Sambito
  • Patent number: 6635559
    Abstract: The present invention provides methods and apparatus for creating insulating layers in Group III-V compound semiconductor structures having aluminum oxide with a substantially stoichiometric compositions. Such insulating layers find applications in a variety of semiconductor devices. For example, in one aspect, the invention provides vertical insulating layers separating two devices, such as photodiodes, formed on a semiconductor substrate from one another. In another aspect, the invention can provide such insulating layers as buried horizontal insulating layers of semiconductor devices.
    Type: Grant
    Filed: September 6, 2001
    Date of Patent: October 21, 2003
    Assignee: Spire Corporation
    Inventors: Anton C. Greenwald, Nader Montazernezam Kalkhoran
  • Publication number: 20030042501
    Abstract: The present invention provides methods and apparatus for creating insulating layers in Group III-V compound semiconductor structures having aluminum oxide with a substantially stoichiometric compositions. Such insulating layers find applications in a variety of semiconductor devices. For example, in one aspect, the invention provides vertical insulating layers separating two devices, such as photodiodes, formed on a semiconductor substrate from one another. In another aspect, the invention can provide such insulating layers as buried horizontal insulating layers of semiconductor devices.
    Type: Application
    Filed: September 6, 2001
    Publication date: March 6, 2003
    Inventors: Anton Carl Greenwald, Nader Montazernezam Kalkhoran