Abstract: A lighting apparatus includes a semiconductor light source in direct contact with a polymer composite comprising a color stable Mn4+ doped phosphor, wherein the lighting apparatus has a color shift of ?1.5 MacAdam ellipses after operating for at least 2,000 hour at a LED current density greater than 2 A/cm2, a LED wall-plug efficiency greater than 40%, and a board temperature greater than 25° C.

Abstract: A lighting apparatus includes a semiconductor light source in direct contact with a polymer composite comprising a color stable Mn4+ doped phosphor, wherein the lighting apparatus has a color shift of ?1.5 MacAdam ellipses after operating for at least 2,000 hour at a LED current density greater than 2 A/cm2, a LED wall-plug efficiency greater than 40%, and a board temperature greater than 25° C.

Abstract: A lighting apparatus includes a semiconductor light source in direct contact with a polymer composite comprising a color stable Mn4+ doped phosphor, wherein the lighting apparatus has a color shift of ?1.5 MacAdam ellipses after operating for at least 2,000 hour at a LED current density greater than 2 A/cm2, a LED wall-plug efficiency greater than 40%, and a board temperature greater than 25° C.

Abstract: A lighting apparatus includes a semiconductor light source in direct contact with a polymer composite comprising a color stable Mn4+ doped phosphor, wherein the lighting apparatus has a color shift of ?1.5 MacAdam ellipses after operating for at least 2,000 hour at a LED current density greater than 2 A/cm2, a LED wall-plug efficiency greater than 40%, and a board temperature greater than 25° C.

Abstract: A circuit breaker having a monolithic structure and method of making is disclosed. The monolithic structure includes an arm portion having copper and a contact portion having a composite material. The composite material has a metallic matrix and a second phase disposed in the metallic matrix. The method of making the monolithic structure includes introducing a first powder into a first region of a mold, introducing a second powder into a second region of the mold, and consolidating the first powder and the second powder together. The first region of the mold corresponds to a contact portion, and the second region corresponds to an arm portion of the monolithic structure of the circuit breaker.

Abstract: A process for synthesizing a color stable Mn4+ doped phosphor includes contacting a precursor of formula I, in gaseous form at an elevated temperature with a fluorine-containing oxidizing agent to form the color stable Mn4+ doped phosphor Ax[MFy]:Mn4+??I wherein A is Li, Na, K, Rb, Cs, NR4 or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; R is H, lower alkyl, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; and y is 5, 6 or 7.

Abstract: A lighting apparatus includes a semiconductor light source in direct contact with a polymer composite comprising a color stable Mn4+ doped phosphor, wherein the lighting apparatus has a color shift of 1.5 MacAdam ellipses after operating for at least 2,000 hour at a LED current density greater than 2 A/cm2, a LED wall-plug efficiency greater than 40%, and a board temperature greater than 25° C.

Abstract: A color stable Mn4+ doped phosphor of formula I, Ax[MFy]:Mn4+??I wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7; and wherein % intensity loss of the phosphor after exposure to light flux of at least 80 w/cm2 at a temperature of at least 50° C. for at least 21 hours is ?4%.

Abstract: A circuit breaker having a monolithic structure and method of making is disclosed. The monolithic structure includes an arm portion having copper and a contact portion having a composite material. The composite material has a metallic matrix and a second phase disposed in the metallic matrix. The method of making the monolithic structure includes introducing a first powder into a first region of a mold, introducing a second powder into a second region of the mold, and consolidating the first powder and the second powder together. The first region of the mold corresponds to a contact portion, and the second region corresponds to an arm portion of the monolithic structure of the circuit breaker.

Abstract: A system including a contact tip that includes an arcing surface, a base surface, and a graded structure is presented. The graded structure includes a first region comprising a first surface proximate to the arcing surface, a second region comprising a second surface proximate to the base surface, and an intermediate region disposed between the first region and the second region. A concentration of silver in the graded structure decreases from the first surface to the second surface. A method of forming a contact tip includes preparing starting materials for a first region, an intermediate region, and a second region of the contact tip. The starting materials of the first, intermediate, and second regions are sequentially added to a container to form a graded blend of starting materials. The graded blend of starting materials are compacted and heat-treated to form a contact tip having a graded structure.

Abstract: A process for synthesizing a color stable Mn4+ doped phosphor includes contacting a precursor of formula I, in gaseous form at an elevated temperature with a fluorine-containing oxidizing agent to form the color stable Mn4+ doped phosphor Ax[MFy]:Mn4+??I wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; and y is 5, 6 or 7.

Abstract: A process for synthesizing a color stable Mn4+ doped phosphor includes contacting a precursor of formula I, in gaseous form at an elevated temperature with a fluorine-containing oxidizing agent to form the color stable Mn4+ doped phosphor Ax[MFy]:Mn4+ wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; and y is 5, 6 or 7.

Abstract: A process for synthesizing a color stable Mn4+ doped phosphor includes contacting a precursor of formula I, in gaseous form at an elevated temperature with a fluorine-containing oxidizing agent to form the color stable Mn4+ doped phosphor Ax[MFy]:Mn4+??I wherein A is Li, Na, K, Rb, Cs, NR4 or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; R is H, lower alkyl, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; and y is 5, 6 or 7.

Abstract: A color stable Mn4+ doped phosphor of formula I, Ax[MFy]:Mn4+??I wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7; and wherein % intensity loss of the phosphor after exposure to light flux of at least 80 w/cm2 at a temperature of at least 50° C. for at least 21 hours is ?4%.

Abstract: A method for utilizing microwave generated multi-bubble plasma to treat an effluent is provided. The method comprises: providing a microwave field; flowing an effluent and gas bubbles in the effluent across the microwave field; enhancing electromagnetic field in a path of the gas bubbles in the microwave field via an electrode; triggering plasma in the gas bubbles as the gas bubbles reach a region of enhanced electromagnetic field; and coupling microwave to the plasma.

Abstract: A luminescent material includes an aluminate phosphor of formula I A1+xMg1+yAl10+zO17+x+y+1.5z:Eu2+, R3+, where 0?x?0.4, 0?y?1 and 0?z?0.2. A is selected from Ca, Ba, and Sr and combinations thereof. The aluminate phosphor is doped with a rare earth ion (R3+), which exists in stable multi-valence states in the luminescent material. R3+ is selected from the group consisting of Sm3+, Yb3+, Tm3+, Ce3+, Tb3+, Pr3+ and combinations thereof. Phosphors of formula I may be blended with other blue, yellow, orange, green, and red phosphors to yield white light phosphor blends. A lighting apparatus including such a luminescent material is also presented. The light apparatus includes a light source in addition to the luminescent material.

Abstract: A luminescent material includes an aluminate phosphor of formula I A1+xMg1+yAl10+zO17+x+y+1.5z:Eu2+, R3+, where 0?x?0.4, 0?y?1 and 0?z?0.2. A is selected from Ca, Ba, and Sr and combinations thereof. The aluminate phosphor is doped with a rare earth ion (R3+), which exists in stable multi-valence states in the luminescent material. R3+ is selected from the group consisting of Sm3+, Yb3+, Tm3+, Ce3+, Tb3+, Pr3+ and combinations thereof. Phosphors of formula I may be blended with other blue, yellow, orange, green, and red phosphors to yield white light phosphor blends. A lighting apparatus including such a luminescent material is also presented. The light apparatus includes a light source in addition to the luminescent material.

Abstract: An easy to clean and stain resistant coating for a cooking product includes an oxycarbofluoride coating. The oxycarbofluoride coating has a composition comprising at least one metal oxide, carbon and fluorine and can be applied to a substrate using a sol-gel process.

Abstract: An easy to clean and stain resistant coating for a cooking product includes an oxycarbofluoride coating. The oxycarbofluoride coating has a composition comprising at least one metal oxide, carbon and fluorine and can be applied to a substrate using a sol-gel process.

Abstract: Low band gap semiconductor oxides include nanocrystalline porous particles doped with an anion selected from the group consisting of carbon, nitrogen, fluorine, and combinations thereof, wherein the doped nanocrystalline porous semiconductor oxide has a lower band gap energy relative to undoped semiconductor oxides. A combustion synthesis process is used to fabricate the low bang gap materials. Also disclosed herein are dye sensitized solar cells containing the doped semiconductor oxides.