Patents by Inventor Nai-Chuan Chen
Nai-Chuan Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20080053518Abstract: The present invention discloses a transparent solar cell system, which comprises: a light-permeable solar energy conversion device, balance units and conductive wires. The light-permeable solar energy conversion device has a transparent photovoltaic element, which is a PN semiconductor structure formed of two transparent conductive films. The transparent conductive films are respectively made of different oxides. The substrate of the transparent solar cell system is made of a common glass or a common plastic; therefore, the transparent solar cell system of the present invention is lightweight and environment-friendly. Further, the present invention has a simple fabrication process and a low fabrication cost; therefore, the present invention can be extensively applied to the windows and doors of buildings and vehicles and benefits the popularization of solar energy.Type: ApplicationFiled: September 5, 2006Publication date: March 6, 2008Inventors: Pen-Hsiu Chang, Hsin-Chun Lu, Ching-Ting Lee, Lain-Be Chang, Gwo-Mei Wu, Nai-Chuan Chen, An-Ping Chiu
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Publication number: 20070045607Abstract: The present invention discloses a AlGaInN nitride substrate structure using TiN as buffer layer and the manufacturing method thereof. The present invention deposits TiN having (111) surface onto the silicon substrate having (111) surface as a buffer layer, and grows III-V AlGaInN nitride epitaxy structure having (0001) surface. The present method can form high-quality III-V AlGaInN nitride epitaxy layer to manufacture the vertical-conducted III-V AlGaInN nitride devices and utilize the high-reflection TiN surface to enhance the efficiency of the opti-electrical devices. The present invention can further prevent the silicon substrate forming the noncrystalline SiNx in the AlGaInN epitaxy process, so that the yield of the chip can be improved.Type: ApplicationFiled: August 26, 2005Publication date: March 1, 2007Inventors: Nai-Chuan Chen, Chin-An Chang, Pen-Hsiu Chang, Chuan-Feng Shih, Wei-Chieh Lien
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Vertical conducting nitride diode using an electrically conductive substrate with a metal connection
Publication number: 20060017060Abstract: A semiconductor device using an electrically conductive substrate that has a metal connection includes an n-type/p-type electrically conductive substrate and one buffer layer formed on the n-type/p-type electrically conductive substrate. An electrically conductive semiconductor layer is formed on the buffer layer, and the metal connection is formed between the electrically conductive semiconductor layer and the electrically conductive substrate, wherein the electrically conductive semiconductor layer is an n-type/p-type nitride.Type: ApplicationFiled: July 26, 2004Publication date: January 26, 2006Applicants: Nai-Chuan Chen, Uni Light Technology Inc.Inventors: Nai-Chuan Chen, Pen-Hsiu Chang, An-Ping Chiu, Chuan-Feng Shih, Shun-Da Teng -
Patent number: 6853012Abstract: An AlGaInP light emitting diode with improved illumination is provided. The AlGaInP light emitting diode includes a semiconductor substrate, a light re-emitting layer, an AlGaInP layer with a first doping concentration, an AlGaInP lower cladding layer with a second doping concentration less than the first doping concentration, an undoped AlGaInP active layer, an AlGaInP upper cladding layer, a window layer, an annular-shaped top electrode on the window layer and a layered electrode on a bottom of the semiconductor substrate. The light re-emitting layer includes at least a first region formed of the light re-emitting layer and a second region formed of Al2O3 enclosing the first region. Since AlGaInP layer between the AlGaInP lower cladding layer and the light re-emitting layer has the first doping concentration larger than that of the AlGaInP lower cladding layer, the AlGaInP layer provides a transverse current spreading.Type: GrantFiled: October 21, 2002Date of Patent: February 8, 2005Assignee: Uni Light Technology Inc.Inventors: Nai-Chuan Chen, Yi-Lun Chou, Nae-Guann Yih
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Publication number: 20040075102Abstract: An AlGaInP light emitting diode with improved illumination is provided. The AlGaInP light emitting diode includes a semiconductor substrate, a light re-emitting layer, an AlGaInP layer with a first doping concentration, an AlGaInP lower cladding layer with a second doping concentration less than the first doping concentration, an undoped AlGaInP active layer, an AlGaInP upper cladding layer, a window layer, an annular-shaped top electrode on the window layer and a layered electrode on a bottom of the semiconductor substrate. The light re-emitting layer includes at least a first region formed of the light re-emitting layer and a second region formed of Al2O3 enclosing the first region. Since AlGaInP layer between the AlGaInP lower cladding layer and the light re-emitting layer has the first doping concentration larger than that of the AlGaInP lower cladding layer, the AlGaInP layer provides a transverse current spreading.Type: ApplicationFiled: October 21, 2002Publication date: April 22, 2004Inventors: Nai-Chuan Chen, Yi-Lun Chou, Nae-Guann Yih
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Patent number: 6555405Abstract: The present invention provides a method for forming a semiconductor device with a metal substrate. The method includes providing at least one semiconductor substrate; forming at least one semiconductor layer on the semiconductor substrate; forming the metal substrate on the semiconductor substrate and then removing the semiconductor substrate. The metal substrate has advantages of high thermal and electrical conductivity that can improve the reliability and lifetime of the semiconductor device.Type: GrantFiled: August 21, 2001Date of Patent: April 29, 2003Assignee: Uni Light Technology, Inc.Inventors: Nai-Chuan Chen, Bor-Jen Wu, Yuan-Hsin Tzou, Nae-Guann Yih, Chien-An Chen
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Patent number: 6468824Abstract: The present invention provides a method for forming a semiconductor device with a metallic substrate. The method comprises providing a semiconductor substrate. At least a semiconductor layer is formed on the semiconductor substrate. A metallic electrode layer is formed on the semiconductor layer. The metallic substrate is formed on the metallic electrode layer and the semiconductor substrate is removed. The metallic substrate has advantages of high thermal and electrical conductivity, that can improve the reliability and life-time of the semiconductor device.Type: GrantFiled: March 22, 2001Date of Patent: October 22, 2002Assignee: Uni Light Technology Inc.Inventors: Nai-Chuan Chen, Bor-Jen Wu, Yuan-Hsin Tzou, Nae-Guann Yih, Chien-An Chen
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Publication number: 20020137244Abstract: The present invention provides a method for forming a semiconductor device with a metal substrate. The method includes at least one semiconductor substrate; at least one semiconductor layer is formed on the semiconductor substrate; the metal substrate is formed on the semiconductor substrate and then the semiconductor substrate is removed. The metal substrate has advantages of high thermal and electrical conductivity, that can improve the reliability and lifetime of the semiconductor device.Type: ApplicationFiled: August 21, 2001Publication date: September 26, 2002Applicant: Uni Light Technology Inc.Inventors: Nai-Chuan Chen, Bor-Jen Wu, Yuan-Hsin Tzou, Nae-Guann Yih, Chien-An Chen
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Publication number: 20020137243Abstract: The present invention provides a method for forming a semiconductor device with a metallic substrate. The method comprises providing a semiconductor substrate. At least a semiconductor layer is formed on the semiconductor substrate. A metallic electrode layer is formed on the semiconductor layer. The metallic substrate is formed on the metallic electrode layer and the semiconductor substrate is removed. The metallic substrate has advantages of high thermal and electrical conductivity, that can improve the reliability and life-time of the semiconductor device.Type: ApplicationFiled: March 22, 2001Publication date: September 26, 2002Inventors: Nai-Chuan Chen, Bor-Jen Wu, Yuan-Hsin Tzou, Nae-Guann Yih, Chien-An Chen
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Publication number: 20020130327Abstract: The present invention provides a light semiconductor device comprising a substrate and a first semiconductor structure on the substrate. A light emitting structure is on a first portion of the first semiconductor structure. A first contact structure is on a second portion of the first semiconductor structure. The second portion is separated from the first portion of the first semiconductor structure. The first contact structure has a first shape. A second semiconductor structure is on the light emitting structure. A transparent contact is on the second semiconductor structure and has a cut-off portion to expose the portion of second semiconductor structure and a second shape. A second contact structure is on the cut-off portion of the transparent contact. The second contact structure contacting the second semiconductor has a third shape.Type: ApplicationFiled: March 19, 2001Publication date: September 19, 2002Inventors: Bor-Jen Wu, Nae-Guann Yih, Chien-An Chen, Nai-Chuan Chen
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Patent number: 6445007Abstract: The present invention provides a light semiconductor device comprising a substrate and a first semiconductor structure on the substrate. A light emitting structure is on a first portion of the first semiconductor structure. A first contact structure is on a second portion of the first semiconductor structure. The second portion is separated from the first portion of the first semiconductor structure. The first contact structure has a first shape. A second semiconductor structure is on the light emitting structure. A transparent contact is on the second semiconductor structure and has a cut-off portion to expose the portion of the second semiconductor structure and a second shape. A second contact structure is on the cut-off portion of the transparent contact. The second contact structure contacting the second semiconductor has a third shape.Type: GrantFiled: March 19, 2001Date of Patent: September 3, 2002Assignee: Uni Light Technology Inc.Inventors: Bor-Jen Wu, Nae-Guann Yih, Chien-An Chen, Nai-Chuan Chen