Abstract: Provided is an inductor structure. In embodiments of the invention, the inductor structure includes a first laminated stack. The first laminated stack includes layers of an insulating material alternating with layers of a first magnetic material. The inductor structure includes a laminated second stack formed on the first laminated stack. The second laminated stack includes layers of the insulating material alternating with layers of a second magnetic material. The second magnetic material has a greater permeability than does the first magnetic material.

Abstract: Embodiments of the invention are directed to a method of fabricating a yoke arrangement of an inductor. A non-limiting example method includes forming a dielectric layer across from a major surface of a substrate. The method further includes configuring the dielectric layer such that it imparts a predetermined dielectric layer compressive stress on the substrate. A magnetic stack is formed on an opposite side of the dielectric layer from the substrate, wherein the magnetic stack includes one or more magnetic layers alternating with one or more insulating layers. The method further includes configuring the magnetic stack such that it imparts a predetermined magnetic stack tensile stress on the dielectric layer, wherein a net effect of the predetermined dielectric layer compressive stress and the predetermined magnetic stack tensile stress on the substrate is insufficient to cause a portion of the major surface of the substrate to be substantially non-planar.

Abstract: A method for fabricating a magnetic material stack on a substrate, comprises forming a first dielectric layer, forming a first magnetic material layer on the first dielectric layer, forming at least a second dielectric layer on the first magnetic material layer and forming at least a second magnetic material layer on the second dielectric layer. During one or more of the forming steps, a surface smoothing operation is performed to remove at least a portion of surface roughness on the layer being formed.

Abstract: A magnetic material stack comprises a first dielectric layer, a first magnetic material layer on the first dielectric layer, at least a second dielectric layer on the first magnetic material layer and at least a second magnetic material layer on the second dielectric layer.

Abstract: A magnetic laminating structure and process for preventing substrate bowing include multiple film stack segments that include a first magnetic layer, at least one additional magnetic layer, and a dielectric spacer disposed between the first and at least one additional magnetic layers. A dielectric isolation layer is intermediate magnetic layers and on the sidewalls thereof. The magnetic layers are characterized by defined tensile strength and the multiple segments function to relive the stress as the magnetic laminating structure is formed, wherein the cumulative thickness of the magnetic layers is greater than 1 micron. Also described are methods for forming the magnetic laminating structure.

Abstract: Embodiments are directed to a method of forming a laminated magnetic inductor and resulting structures having multiple magnetic layer thicknesses. A first magnetic stack having one or more magnetic layers alternating with one or more insulating layers is formed in a first inner region of the laminated magnetic inductor. A second magnetic stack is formed opposite a major surface of the first magnetic stack in an outer region of the laminated magnetic inductor. A third magnetic stack is formed opposite a major surface of the second magnetic stack in a second inner region of the laminated magnetic inductor. The magnetic layers are formed such that a thickness of a magnetic layer in each of the first and third magnetic stacks is less than a thickness of a magnetic layer in the second magnetic stack.

Abstract: A method for fabricating a magnetic material stack on a substrate includes the following steps. A first dielectric layer is formed. A first magnetic material layer is formed on the first dielectric layer. At least a second dielectric layer is formed on the first magnetic material layer. At least a second magnetic material layer is formed on the second dielectric layer. During one or more of the forming steps, a surface smoothing operation is performed to remove at least a portion of surface roughness on the layer being formed. The magnetic material stack can be used to form a low magnetic loss yoke inductor.

Abstract: Circuits and methods are provided. The circuits and methods are for providing a supply voltage to a dynamic internal power supply node of a group of other circuits. A circuit includes a first transistor and a second transistor, of different channel types, coupled in parallel to a static power supply that supplies a constant power supply voltage. The circuit further includes a magnetic inductor having a first terminal connected to a common node between the first transistor and the second transistor and a second terminal connected to the dynamic internal power supply node, to supply the dynamic internal power supply node with a boosted voltage having a magnitude greater than a magnitude of the constant power supply voltage by resonating with at least one capacitance coupled to the dynamic internal power supply node.

Abstract: Circuits and methods are provided. The circuits and methods are for providing a supply voltage to a dynamic internal power supply node of a group of other circuits. A circuit includes a first transistor and a second transistor, of different channel types, coupled in parallel to a static power supply that supplies a constant power supply voltage. The circuit further includes a magnetic inductor having a first terminal connected to a common node between the first transistor and the second transistor and a second terminal connected to the dynamic internal power supply node, to supply the dynamic internal power supply node with a boosted voltage having a magnitude greater than a magnitude of the constant power supply voltage by resonating with at least one capacitance coupled to the dynamic internal power supply node.

Abstract: A magnetic laminating structure and process includes alternating layers of a magnetic material and a multilayered insulating material, wherein the multilayered insulating material is intermediate adjacent magnetic material layers and comprises a first insulating layer abutting at least one additional insulating layer, wherein the first insulating layer and the at least one additional insulating layer comprise different dielectric materials and/or are formed by a different deposition process, and wherein the layers of the magnetic material have a cumulative thickness greater than 1 micron.

Abstract: Embodiments of the invention are directed to a method of fabricating a yoke arrangement of an inductor. A non-limiting example method includes forming a dielectric layer across from a major surface of a substrate. The method further includes configuring the dielectric layer such that it imparts a predetermined dielectric layer compressive stress on the substrate. A magnetic stack is formed on an opposite side of the dielectric layer from the substrate, wherein the magnetic stack includes one or more magnetic layers alternating with one or more insulating layers. The method further includes configuring the magnetic stack such that it imparts a predetermined magnetic stack tensile stress on the dielectric layer, wherein a net effect of the predetermined dielectric layer compressive stress and the predetermined magnetic stack tensile stress on the substrate is insufficient to cause a portion of the major surface of the substrate to be substantially non-planar.

Abstract: Semiconductor devices and methods relating to the semiconductor devices are provided. A semiconductor device includes a resonant clock circuit. The semiconductor device further includes an inductor. The semiconductor device also includes a magnetic layer formed of a magnetic material disposed in between a portion of the resonant clock circuit and the inductor. Clock signals of the resonant clock circuit are utilized by the magnetic layer.

Abstract: Semiconductor devices and methods relating to the semiconductor devices are provided. A semiconductor device includes a resonant clock circuit. The semiconductor device further includes an inductor. The semiconductor device also includes a magnetic layer formed of a magnetic material disposed in between a portion of the resonant clock circuit and the inductor. Clock signals of the resonant clock circuit are utilized by the magnetic layer.

Abstract: Circuits and methods are provided. The circuits and methods are for providing a supply voltage to a dynamic internal power supply node of a group of other circuits. A circuit includes a first transistor and a second transistor, of different channel types, coupled in parallel to a static power supply that supplies a constant power supply voltage. The circuit further includes a magnetic inductor having a first terminal connected to a common node between the first transistor and the second transistor and a second terminal connected to the dynamic internal power supply node, to supply the dynamic internal power supply node with a boosted voltage having a magnitude greater than a magnitude of the constant power supply voltage by resonating with at least one capacitance coupled to the dynamic internal power supply node.

Abstract: A circuit and method are provided. The circuit and method are for providing a supply voltage. The circuit includes a first transistor and a second transistor, coupled to a static power supply that supplies a constant power supply voltage. The circuit further includes a magnetic inductor having a first terminal connected to a common node between the first transistor and the second transistor and a second terminal connected to the dynamic internal power supply node, to supply a dynamic internal power supply node with a boosted voltage relative to the constant power supply voltage by resonating with at least one capacitance coupled to the dynamic internal power supply node.

Abstract: Circuits and methods are provided. The circuits and methods are for providing a supply voltage to a dynamic internal power supply node of a group of other circuits. A circuit includes a first transistor and a second transistor, of different channel types, coupled in parallel to a static power supply that supplies a constant power supply voltage. The circuit further includes a magnetic inductor having a first terminal connected to a common node between the first transistor and the second transistor and a second terminal connected to the dynamic internal power supply node, to supply the dynamic internal power supply node with a boosted voltage having a magnitude greater than a magnitude of the constant power supply voltage by resonating with at least one capacitance coupled to the dynamic internal power supply node.

Abstract: Embodiments of the invention are directed to a method of fabricating a yoke arrangement of an inductor. A non-limiting example method includes forming a dielectric layer across from a major surface of a substrate. The method further includes configuring the dielectric layer such that it imparts a predetermined dielectric layer compressive stress on the substrate. A magnetic stack is formed on an opposite side of the dielectric layer from the substrate, wherein the magnetic stack includes one or more magnetic layers alternating with one or more insulating layers. The method further includes configuring the magnetic stack such that it imparts a predetermined magnetic stack tensile stress on the dielectric layer, wherein a net effect of the predetermined dielectric layer compressive stress and the predetermined magnetic stack tensile stress on the substrate is insufficient to cause a portion of the major surface of the substrate to be substantially non-planar.

Abstract: Provided is an inductor structure. In embodiments of the invention, the inductor structure includes a laminated first stack and a laminated second stack. The laminated first stack includes one or more layers of a magnetic material and one or more layers of a first insulating material having a thickness. The inductor structure also includes at least one layer of a second insulating material having a thickness. The thickness of the at least one layer of the second insulating material is different than the thickness of each of the layers of the first insulating material.

Abstract: Provided is an inductor structure. In embodiments of the invention, the inductor structure includes a first laminated stack. The first laminated stack includes layers of an insulating material alternating with layers of a first magnetic material. The inductor structure includes a laminated second stack formed on the first laminated stack. The second laminated stack includes layers of the insulating material alternating with layers of a second magnetic material. The second magnetic material has a greater permeability than does the first magnetic material.

Abstract: Provided is an inductor structure. In embodiments of the invention, the inductor structure includes a first laminated stack. The first laminated stack includes layers of an insulating material alternating with layers of a first magnetic material. The inductor structure includes a laminated second stack formed on the first laminated stack. The second laminated stack includes layers of the insulating material alternating with layers of a second magnetic material. The second magnetic material has a greater permeability than does the first magnetic material.