Abstract: A gate in a semiconductor device is formed to have a dummy gate pattern that protects a gate. Metal lines are formed to supply power for a semiconductor device and transfer a signal. A semiconductor device includes a quad coupled receiver type input/output buffer. The semiconductor device is formed with a gate line that extends over an active region, and a gate pad located outside of the active region. The gate line and the gate pad are adjoined such that the gate line and a side of the gate pad form a line. Dummy gates may also be applied. The semiconductor device includes a first metal line patterns supplying power to a block having a plurality of cells, a second metal line pattern transferring a signal to the cells, and dummy metal line patterns divided into in a longitudinal direction.

Abstract: A gate in a semiconductor device is formed to have a dummy gate pattern that protects a gate. Metal lines are formed to supply power for a semiconductor device and transfer a signal. A semiconductor device includes a quad coupled receiver type input/output buffer. The semiconductor device is formed with a gate line that extends over an active region, and a gate pad located outside of the active region. The gate line and the gate pad are adjoined such that the gate line and a side of the gate pad form a line. Dummy gates may also be applied. The semiconductor device includes a first metal line patterns supplying power to a block having a plurality of cells, a second metal line pattern transferring a signal to the cells, and dummy metal line patterns divided into in a longitudinal direction.

Abstract: A semiconductor apparatus comprises a semiconductor substrate; a group of PMOS transistors formed on a predetermined portion of the semiconductor substrate; a group of NMOS transistors disposed adjacent to the group of PMOS transistors on the semiconductor substrate; a guard ring region formed between the group of PMOS transistors and the group of NMOS transistors; and a current detouring unit formed in the guard ring region and configured to discharge current produced by plasma ions towards the semiconductor substrate.

Abstract: A gate in a semiconductor device is formed to have a dummy gate pattern that protects a gate. Metal lines are formed to supply power for a semiconductor device and transfer a signal. A semiconductor device includes a quad coupled receiver type input/output buffer. The semiconductor device is formed with a gate line that extends over an active region, and a gate pad located outside of the active region. The gate line and the gate pad are adjoined such that the gate line and a side of the gate pad form a line. Dummy gates may also be applied. The semiconductor device includes a first metal line patterns supplying power to a block having a plurality of cells, a second metal line pattern transferring a signal to the cells, and dummy metal line patterns divided into in a longitudinal direction.

Abstract: An amplifier in a semiconductor integrated circuit includes a current-mirror typed differential amplifier and a cross-coupled differential amplifier, whereby a minute voltage difference from a bit line signal or a data bus signal is amplified. The amplifier for generating an amplified signal includes a load for coupling to a first voltage potential, a first sense amplifier responsive to a first data signal, and a second sense amplifier responsive to a second data signal. The first and second sense amplifiers are commonly coupled to the load, and the amplified signal of the first or second data signal is generated.

Abstract: An amplifier in a semiconductor integrated circuit includes a current-mirror typed differential amplifier and a cross-coupled differential amplifier, whereby a minute voltage difference from a bit line signal or a data bus signal is amplified. The amplifier for generating an amplified signal includes a load for coupling to a first voltage potential, a first sense amplifier responsive to a first data signal, and a second sense amplifier responsive to a second data signal. The first and second sense amplifiers are commonly coupled to the load, and the amplified signal of the first or second data signal is generated.

Abstract: An amplifier in a semiconductor integrated circuit includes a current-mirror typed differential amplifier and a cross-coupled differential amplifier, whereby a minute voltage difference from a bit line signal or a data bus signal is amplified. The amplifier for generating an amplified signal includes a load for coupling to a first voltage potential, a first sense amplifier responsive to a first data signal, and a second sense amplifier responsive to a second data signal. The first and second sense amplifiers are commonly coupled to the load, and the amplified signal of the first or second data signal is generated.