Patents by Inventor Nam Mee Kim

Nam Mee Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8048684
    Abstract: Disclosed herein is a structure and method for manipulating a spin state, regarded as important in the field of spintronics, by which the distribution of spin-up and spin-down states of carriers in a hybrid double quantum disk structure, composed of a diluted magnetic semiconductor and a ferroelectric compound semiconductor, is manipulated through dipole polarization switching of the ferroelectric compound semiconductor without a change in bias. Giant Zeeman splitting properties of the diluted magnetic semiconductor and polarization properties of the ferroelectric compound semiconductor are applied in conjunction with the Pauli exclusion principle, thus enabling the combination or separation of carriers in spin-up and spin-down states in the hybrid double quantum disk structure. The spin relaxation time in the structure is on the order of microseconds, during which the spin state is well-defined, and therefore, the structure can be applied to microprocessors having gigahertz clock speeds.
    Type: Grant
    Filed: May 7, 2008
    Date of Patent: November 1, 2011
    Assignees: Samsung Electronics Co., Ltd., Seoul National University Industry Foundation
    Inventors: Hee Sang Kim, Nam Mee Kim
  • Publication number: 20090085026
    Abstract: Disclosed herein is a structure and method for manipulating a spin state, regarded as important in the field of spintronics, by which the distribution of spin-up and spin-down states of carriers in a hybrid double quantum disk structure, composed of a diluted magnetic semiconductor and a ferroelectric compound semiconductor, is manipulated through dipole polarization switching of the ferroelectric compound semiconductor without a change in bias. Giant Zeeman splitting properties of the diluted magnetic semiconductor and polarization properties of the ferroelectric compound semiconductor are applied in conjunction with the Pauli exclusion principle, thus enabling the combination or separation of carriers in spin-up and spin-down states in the hybrid double quantum disk structure. The spin relaxation time in the structure is on the order of microseconds, during which the spin state is well-defined, and therefore, the structure can be applied to microprocessors having gigahertz clock speeds.
    Type: Application
    Filed: May 7, 2008
    Publication date: April 2, 2009
    Applicants: SAMSUNG ELECTRONICS CO., LTD., SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION
    Inventors: Hee Sang KIM, Nam Mee KIM