Abstract: A metal-insulator-metal (MIM) capacitor structure includes a substrate extending along a first direction to define a length, a second direction orthogonal to the first direction to define a width, and a third direction orthogonal to the first and second direction to define a height. The substrate includes a first capacitance region and a second capacitance region. The first capacitance region has a first maximum operating voltage (Vmax) and the second capacitance region has a second Vmax that is greater than the first Vmax.

Abstract: Disclosed is a processing device, a system, a method for board writing display. The processing device comprises: an extraction unit to extract a first board-writing image from a first image frame in a video and a second board-writing image from a second image frame in the video; a supplement unit to determine an occlusion area of the second board-writing image based on a target object segmentation image of the second image frame, and replace the occlusion area of the second board-writing image with a corresponding area of the first board-writing image to obtain a third board-writing image; an output unit to generate an output image frame based on the second image frame and the third board-writing image, the output image frame presents an image with a target object located behind a transparentized board writing content. The present disclosure enables the board-writing data in the video to be presented completely.

Abstract: Disclosed is a board-writing extraction method and a related device. The board writing extraction method includes: obtaining a target object segmentation image of a writing-board image, wherein a contrast ratio between a target object and a non-target object in the target object segmentation image reaches a predetermined contrast ratio; converting, according to the target object segmentation image, a grayscale image of the writing-board image into a to-be-processed grayscale image with the board writing being highlighted; and performing binarization processing on the to-be-processed grayscale image to obtain a board-writing image of the writing-board image. The present disclosure can effectively reduce the noise in the board-writing image extracted from the writing-board image.

Abstract: Embodiments of the present invention are directed to methods and resulting structures for integrated circuits having metal-insulator-metal (MIM) capacitors that serve as both decoupling capacitors and crack stops. In a non-limiting embodiment, an interconnect is formed on a first portion of a substrate in an interior region of the integrated circuit. A second portion of the substrate is exposed in an edge region of the integrated circuit. A MIM capacitor is formed over the second portion of the substrate in the edge region. The MIM capacitor includes two or more plates and one or more dielectric layers. Each dielectric layer is positioned between an adjacent pair of the two or more plates and a portion of the two or more plates extends over the interconnect in the interior region. A plate of the two or more plates is electrically coupled to a last metal wiring level of the interconnect.

Abstract: Embodiments of the present invention are directed to methods and resulting structures for integrated circuits having metal-insulator-metal (MIM) capacitors that serve as both decoupling capacitors and crack stops. In a non-limiting embodiment, an interconnect is formed on a first portion of a substrate in an interior region of the integrated circuit. A second portion of the substrate is exposed in an edge region of the integrated circuit. A MIM capacitor is formed over the second portion of the substrate in the edge region. The MIM capacitor includes two or more plates and one or more dielectric layers. Each dielectric layer is positioned between an adjacent pair of the two or more plates and a portion of the two or more plates extends over the interconnect in the interior region. A plate of the two or more plates is electrically coupled to a last metal wiring level of the interconnect.

Abstract: A metal-insulator-metal (MIM) capacitor structure includes a substrate extending along a first direction to define a length, a second direction orthogonal to the first direction to define a width, and a third direction orthogonal to the first and second direction to define a height. The substrate includes a first capacitance region and a second capacitance region. The first capacitance region has a first maximum operating voltage (Vmax) and the second capacitance region has a second Vmax that is greater than the first Vmax.

Abstract: Embodiments of the present invention are directed to methods and resulting structures for integrated circuits having metal-insulator-metal (MIM) capacitors that serve as both decoupling capacitors and crack stops. In a non-limiting embodiment, an interconnect is formed on a first portion of a substrate in an interior region of the integrated circuit. A second portion of the substrate is exposed in an edge region of the integrated circuit. A MIM capacitor is formed over the second portion of the substrate in the edge region. The MIM capacitor includes two or more plates and one or more dielectric layers. Each dielectric layer is positioned between an adjacent pair of the two or more plates and a portion of the two or more plates extends over the interconnect in the interior region. A plate of the two or more plates is electrically coupled to a last metal wiring level of the interconnect.

Abstract: A metal insulator metal capacitor and method for fabricating a metal insulator metal capacitor (MIMcap) are disclosed. A first level metal pattern is embedded in a first dielectric layer over a substrate. The first level metal pattern has a top surface co-planar with a top surface of the first dielectric layer. In a selected etch step, either one of the first metal pattern or the first dielectric is etched to form a stepped top surface. A conformal insulating layer on the stepped top surface. The MIMcap is formed on the conformal insulating layer in a conformal manner.

Abstract: A metal insulator metal capacitor and method for fabricating a metal insulator metal capacitor (MIMcap) are disclosed. A first level metal pattern is embedded in a first dielectric layer over a substrate. The first level metal pattern has a top surface co-planar with a top surface of the first dielectric layer. In a selected etch step, either one of the first metal pattern or the first dielectric is etched to form a stepped top surface. A conformal insulating layer on the stepped top surface. The MIMcap is formed on the conformal insulating layer in a conformal manner.

Abstract: A single molecule or molecule complex detection method is disclosed in certain aspects, comprising nano- or micro-fluidic channels.

Abstract: A single molecule or molecule complex detection method is disclosed in certain aspects, comprising nano- or micro-fluidic channels.

Abstract: A nano-fluidic trapping device and method of fabrication are disclosed. In one embodiment, a nano-fluidic trapping device for assembling a SERS-active cluster includes a substrate. The nano-fluidic trapping device further includes a SERS-active cluster compartment. The SERS-active cluster is formed in the SERS-active cluster compartment. In addition, the nano-fluidic trapping device includes a reservoir. The reservoir allows introduction of target molecules into the nano-fluidic trapping device. Moreover, the nano-fluidic trapping device includes a microchannel. The microchannel allows the target molecules to be introduced to the SERS-active cluster compartment from the reservoir. The nano-fluidic trapping device also includes a nanochannel. The SERS-active cluster compartment, the reservoir, the microchannel, and the nanochannel are disposed within the substrate.

Abstract: The subject invention provides materials and methods for the efficient and economical production of flowering plants from bulbs. Using the procedures described herein, it is possible to produce large numbers of healthy plants from bulbs or even seeds in a timely fashion. Specifically, bulbs or seeds are placed in at least one growth tray and stored in a cool environment. Such environment induces plant growth in roots and shoots. Once the roots and shoots of the plants form an interwoven cluster on the interior bottom surface of a growth tray, the plant clusters and the growth tray are removed from the cool environment and planted as a unit in soil to grow to maturity.

Abstract: The subject invention provides inexpensive and convenient containers for holding a variety of substances. Although the containers of the subject invention are particularly well adapted for use in cell culture procedures, the versatile nature of these containers make them advantageous in a wide variety of applications.