Abstract: A tool device includes a lever having two screw holes, two arms each having an upper orifice for securing to the end portions of the lever, two rods attached to the arms for positioning two end ears of a housing of a universal joint to the arms, one or more screws engaged with the screw holes of the lever and adjustable relative to the lever, and each screw include a lower cavity for engaging with a stud, each stud include a tip for engaging with the slot that is formed between the end ears of the housing and for being forced to engage into the slot and to separate the end ears of the housing from each other and for allowing a bearing member to be removed from the housing.

Abstract: A tool device includes a support lever having a middle screw hole and having two side open channels, a pressing member having an outer thread for engaging with the screw hole of the support lever and having a center member pivotally attached to the inner end portion for engaging with the object, and two connecting levers each having a tongue formed in an inner end portion for engaging with the bearing element to be removed and each having an outer end portion engageable into the channel of the support lever, and each having an enlarged head for anchoring the support lever to the element and the object, and for allowing the element to be pulled and removed from the object with the pressing member.

Abstract: A method for preventing damage caused by high intensity light sources to optical components includes annealing the optical component for a predetermined period. Another method includes etching the optical component in an etchant including fluoride and bi-fluoride ions. The method also includes ultrasonically agitating the etching solution during the process followed by rinsing of the optical component in a rinse bath.

Abstract: A system and method for reducing volume spike during switching of audio output devices of an electronic device is provided. The system and method adjusts a volume level of a first audio output device currently adopted by the electronic device for audible output to a muted level, and switches the audible output from the first audio output device to a second audio output device with the muted level. The system and method further receives a desired volume level input by a user, and adjusts the second audio output device from the muted level to the desired volume level.

Abstract: A tire pressure monitoring device includes a housing unit, a tire inflating unit, and a tire pressure monitoring unit. The housing unit includes: a tubular body confining an air chamber; a tire coupling seat adapted to couple the tubular body to a tire such that the air chamber is in fluid communication with an interior of the tire; and a cap body formed with an outwardly extending annular flange to engage a retainer part of the tubular body. The tire inflating unit includes an inflating tube connected at one end to the tubular body and in fluid communication with the air chamber, and an inflating valve. The tire pressure monitoring unit is disposed in the tubular body and is covered by the cap body.

Abstract: A manufacturing method of a thin film transistor is provided. A buffer layer is formed on a substrate, and then a first and a second poly-silicon island are formed thereon. A gate-insulating layer is formed on the substrate, and a first and a second gate are formed thereon. A sacrificed layer is formed on the substrate and a photo-resist layer is formed thereon. The sacrificed layer above the first poly-silicon island is removed by using the photo-resist layer as a mask. A first ion implantation process is performed to form a first source/drain. The photo-resist layer is removed and a second ion implantation process is performed to form a second source/drain. At the same time, the second ion implantation process is used to implant ions into the buffer layer below the two sides of the second gate. A lightly-doped ion implantation process is performed after removing the sacrificed layer.

Abstract: A manufacturing method of a thin film transistor is provided. A buffer layer is formed on a substrate, and then a first and a second poly-silicon island are formed thereon. A gate-insulating layer is formed on the substrate, and a first and a second gate are formed thereon. A sacrificed layer is formed on the substrate and a photo-resist layer is formed thereon. The sacrificed layer above the first poly-silicon island is removed by using the photo-resist layer as a mask. A first ion implantation process is performed to form a first source/drain. The photo-resist layer is removed and a second ion implantation process is performed to form a second source/drain. At the same time, the second ion implantation process is used to implant ions into the buffer layer below the two sides of the second gate. A lightly-doped ion implantation process is performed after removing the sacrificed layer.

Abstract: A method of manufacturing a thin film transistor is described. A polysilicon island is formed over a substrate. A gate insulating layer is formed over the substrate to cover the polysilicin island. A gate is formed on the gate insulating layer above the polysilicon island. A passivation layer is formed over the substrate to cover the gate and the gate insulating layer. An ion implanting process is carried out to form a source/drain in the polysilicon island beside the gate, wherein a region between the source and the drain is a channel. After the first passivation layer is removed, a patterned dielectric layer is formed over the substrate, wherein the dielectric layer exposes a portion of the source/drain. A source/drain conductive layer is formed over the dielectric layer and is electrically connected to the source/drain.

Abstract: A method of forming a thin film transistor is described. A polysilicon layer is formed over a substrate, wherein the polysilicon layer has a first region, a second region and a channel region between the first and second regions. A nitrogen doping process is carried out to dope nitrogen into the polysilicin layer. A gate insulating layer and a gate are sequentially formed over the polysilicon layer, wherein the gate is formed over the channel region. A doping process is performed so as to form a source and a drain in the first region and second region, respectively.

Abstract: A thin film transistor includes a substrate, a polysilicon layer, a patterned gate dielectric layer, a gate layer, a channel region, a source region, a drain region, and a LDD region. The polysilicon layer is positioned over the substrate. The patterned gate dielectric layer is positioned over the polysilicon layer. The patterned gate dielectric layer has a third and a fourth portion, wherein the fourth portion has a thickness smaller than that of the third portion. The gate layer is positioned over the third portion. The source region and the drain region are positioned in the polysilicon layer under the fourth portion. The channel region is positioned in the polysilicon layer under the gate layer. The LDD region is positioned in the polysilicon layer under the third portion and is between the channel region and the source region or between the channel region and the drain region.

Abstract: A method is disclosed to make a lightly doped drain of a low-temperature poly-silicon thin film transistor. Nitrogen is implanted during steps of doping the source and the drain so as to suppress the spreading of the other types of dope so that the poly-silicon layer forms a shallow interface lightly doped drain after annealing. Implantation of nitrogen takes place before or after the other types of dope. Nitrogen is implanted to a depth no greater than that of the other types of dope. The present is simple, improves hot carrier effect and repairs flaws in the poly-silicon layer.

Abstract: A method of manufacturing a thin film transistor is described. A polysilicon island is formed over a substrate. A gate insulating layer is formed over the substrate to cover the polysilicin island. A gate is formed on the gate insulating layer above the polysilicon island. A passivation layer is formed over the substrate to cover the gate and the gate insulating layer. An ion implanting process is carried out to form a source/drain in the polysilicon island beside the gate, wherein a region between the source and the drain is a channel. After the first passivation layer is removed, a patterned dielectric layer is formed over the substrate, wherein the dielectric layer exposes a portion of the source/drain. A source/drain conductive layer is formed over the dielectric layer and is electrically connected to the source/drain.

Abstract: A thin film transistor includes a substrate, a polysilicon layer, a patterned gate dielectric layer, a gate layer, a channel region, a source region, a drain region, and a LDD region. The polysilicon layer is positioned over the substrate. The patterned gate dielectric layer is positioned over the polysilicon layer. The patterned gate dielectric layer has a third and a fourth portion, wherein the fourth portion has a thickness smaller than that of the third portion. The gate layer is positioned over the third portion. The source region and the drain region are positioned in the polysilicon layer under the fourth portion. The channel region is positioned in the polysilicon layer under the gate layer. The LDD region is positioned in the polysilicon layer under the third portion and is between the channel region and the source region or between the channel region and the drain region.

Abstract: A keyswitch structure has a slender key cap and an integral balance structure for a key with a short press stroke. The keyswitch structure has a casing and at least one key. The casing has at least one pair of hooks arranged on a bottom face thereof, and at least one receiving groove. The key has a key cap, a connection portion parallel extended from a bottom portion of the key cap, and a balance rod integrally arranged on an end side of the connection portion. The balance rod has two sides arranged in the two hooks, respectively. The present invention can simplify the assembly steps, and efficiently prevent the key from swinging and being wedged.

Abstract: A keyswitch structure has a slender key cap and an integral balance structure for a key with a short press stroke. The keyswitch structure has a casing and at least one key. The casing has at least one pair of hooks arranged on a bottom face thereof, and at least one receiving groove. The key has a key cap, a connection portion parallel extended from a bottom portion of the key cap, and a balance rod integrally arranged on an end side of the connection portion. The balance rod has two sides arranged in the two hooks, respectively. The present invention can simplify the assembly steps, and efficiently prevent the key from swinging and being wedged.

Abstract: An apparatus for automatically delivering hemodialysis solution to a plurality of hemodialysis machines includes a plurality of supply tanks adapted to be fluidly communicated with a corresponding one of the hemodialysis machines. Each of the supply tanks has a bottom portion provided with a connecting port. A main tank contains the hemodialysis solution therein and is formed with an outlet port. A solution delivery system includes a main delivery pipe which has an inlet section connected to the outlet port of the main tank and provided with an electromagnetic delivery control valve and a delivery pump, and a plurality of main branch pipes. Each of the main branch pipes has an input portion connected fluidly to the main delivery pipe and an output portion connected fluidly to the connecting port of a respective one of the supply tanks. Each of the main branch pipes is provided with an electromagnetic main branch valve.