Abstract: A process comprises forming a first electrical interconnect structure on a surface of a singulated semiconductor chip having an alignment pattern, which is scanned and stored in a scanning device prior to application of a curable underfill coating to the surface of the singulated semiconductor chip. A curable underfill coating is applied to the surface of the singulated semiconductor chip to produce a coated semiconductor chip. The scanned and stored alignment pattern is delivered to an alignment and joining device positioned adjacent to and operatively associated with a substrate having a second electrical interconnect structure alignable to make electrical contact with the first electrical interconnect structure.

Abstract: A reworkable thermoset epoxy-containing material that allows for a reworkable assembly such as a reworkable waferlevel underfilled microelectronic package. A method for using the reworkable thermoset material in the formation of a microelectronic package using this material.

Abstract: A semiconductor wafer having alignment marks a sufficient distance from the outer wafer edge that reference dicing channels and a method for same. A process for dicing WLUF coated wafers into singulated chips using said alignment marks on the outer edge of the wafer.

Abstract: A semiconductor wafer and the process for aligning wafer level underfill material coated chips with a substrate via alignment marks made visible through laser dicing.

Abstract: A Negative Thermal Expansion system (NTEs) device for TCE compensation or CTE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging. One aspect of the present invention provides a method for fabricating micromachine devices that have negative thermal expansion coefficients that can be made into a composite for manipulation of the TCE of the material. These devices and composites made with these devices are in the categories of materials called “smart materials” or “responsive materials.” Another aspect of the present invention provides microdevices comprised of dual opposed bilayers of material where the two bilayers are attached to one another at the peripheral edges only, and where the bilayers themselves are at a minimum stress conditions at a reference temperature defined by the temperature at which the bilayers are formed.

Abstract: An IC device is packaged for accelerated transient particle emission by doping the underfill thereof with a transient-particle-emitting material having a predetermined, substantially constant emission rate. The emission rate may be tunable. In one aspect, a radioactive adhesive composition is provided for bonding a semiconductor device to a chip carrier. The radioactive adhesive composition is made from a cured reaction product including a resin and a filler, and may be reworkable or non-reworkable. Either the resin or the filler, individually or both together as a mix, are doped substantially uniformly with the transient-particle-emitting material, thereby putting the transient-particle-emitting in close proximity with the IC to be tested. The underfill is formulated to have a stable chemistry, and the doped particles are encapsulated, so as to contain the emissions. Accelerated transient-particle-emission testing may then be performed on the IC in situ to provide accelerated detection of soft errors.

Abstract: The present invention is a thermal interface for coupling a heat source to a heat sink. One embodiment of the invention comprises a mesh and a liquid, e.g., a thermally conductive liquid, disposed in the mesh. The mesh and the thermally conductive liquid are adapted to contact both the heat source and the heat sink when disposed therebetween. In one embodiment, the mesh may comprise a metal or organic material compatible with the liquid. In one embodiment, the liquid may comprise liquid metal. For example, the liquid may comprise a gallium indium tin alloy. A gasket may optionally be used to seal the mesh and the liquid between the heat source and the heat sink. In one embodiment, the heat source is an integrated circuit chip.

Abstract: In one embodiment, the present invention is a method and apparatus for chip cooling using a liquid metal thermal interface. One embodiment of an inventive thermal interface for facilitating thermal contact between opposing surfaces of an integrated circuit chip and a heat sink the thermal interface includes a liquid metal layer comprising a thermally conductive liquid metal material. A first barrier layer bonds the liquid metal layer to the surface of the integrated circuit chip, and a second barrier layer bonds the liquid metal layer to the surface of the heat sink.

Abstract: A reworkable thermoset epoxy-containing material that allows for a reworkable assembly such as a reworkable waferlevel underfilled miocroelectronic package. A method for using the reworkable thermoset material in the formation of a microelectronic package using this material.

Abstract: Reworkable thermoset acid-cleavable acetal and ketal based epoxy oligomers can be B-staged into a tack free state. Compositions containing the epoxy oligomers are employed in a reworkable assembly such as a wafer-level underfilled microelectronic package.

Abstract: The present invention is a thermal interface for IC chip cooling. One embodiment of the invention comprises a thermally conductive liquid or paste-like metal(s) disposed within a flexible, thermally conductive enclosure. The enclosure is adapted to be placed between an IC chip and a heat sink to enhance heat transfer from the chip to the heat sink, thereby enabling quicker and more efficient cooling of the chip than can be achieved by conventional techniques. In several embodiments, the thermal interface is held in place by mechanical pressure rather than by bonding, which further facilitates inspection and repair of the IC device.

Abstract: A reworkable thermoset epoxy-containing material that allows for a reworkable assembly such as a reworkable waferlevel underfilled miocroelectronic package. A method for using the reworkable thermoset material in the formation of a microelectronic package using this material.