Patents by Inventor Nanda PALANIAPPAN

Nanda PALANIAPPAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11201188
    Abstract: An imaging device may have an array of image sensor pixels. Each image sensor pixel of the array of image sensor pixels may have first and second photodiodes with different sensitivities. The photodiode having the lower sensitivity may be coupled to a storage diode and may alternately discard charge and transfer charge to the storage diode during an integration time for flicker mitigation. The length of time for which charge is discarded in each shutter cycle for flicker mitigation may be selected to adjust dynamic range of the imaging pixel. Upon conclusion of the integration time, charge from the storage diode may be sampled in a high conversion gain readout. Overflow charge from a dual conversion gain capacitor may then be sampled in a low conversion gain readout. Charge from the photodiode having higher sensitivity may finally be sampled in a high conversion gain readout.
    Type: Grant
    Filed: July 3, 2019
    Date of Patent: December 14, 2021
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Nanda Palaniappan, Minseok Oh
  • Publication number: 20200286945
    Abstract: An imaging device may have an array of image sensor pixels. Each image sensor pixel of the array of image sensor pixels may have first and second photodiodes with different sensitivities. The photodiode having the lower sensitivity may be coupled to a storage diode and may alternately discard charge and transfer charge to the storage diode during an integration time for flicker mitigation. The length of time for which charge is discarded in each shutter cycle for flicker mitigation may be selected to adjust dynamic range of the imaging pixel. Upon conclusion of the integration time, charge from the storage diode may be sampled in a high conversion gain readout. Overflow charge from a dual conversion gain capacitor may then be sampled in a low conversion gain readout. Charge from the photodiode having higher sensitivity may finally be sampled in a high conversion gain readout.
    Type: Application
    Filed: July 3, 2019
    Publication date: September 10, 2020
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Nanda PALANIAPPAN, Minseok OH