Abstract: One or more embodiments of the present invention provide a microbial strain with improved productivity of ?-glutamylcysteine, bis-?-glutamylcystine, ?-glutamylcystine, reduced glutathione, and/or oxidized glutathione. Such microbial strain has disruption of [1] a gene encoding ?-glutamyltransferase and [2] a gene encoding phosphoglycerate mutase and enhanced expression of [3] a gene encoding glutamate-cysteine ligase and/or a gene encoding glutathione synthetase or [4] a gene encoding bifunctional glutathione synthetase. This invention also discloses a method for producing the substances mentioned above via culture of the microbial strain.

Abstract: A camera device includes a first filter configured to restrict a transverse wave component of incident light having light of a plurality of different wavelength bands generated based on birefringence in a car film from a vehicle to which the car film is adhered, a lens on which a vertical wave component of the incident light transmitted through the first filter is incident, a second filter configured to restrict a vertical wave component of the incident light in a visible region among the vertical wave component of the incident light imaged by the lens, and an imaging element configured to image the vehicle as a subject based on a vertical wave component of the incident light in a near-infrared region transmitted through the second filter.

Abstract: The invention provides a water supplying apparatus and method thereof which has a high capacity of peeling and removing a disused material such as a resist film and the like, and can efficiently use water vapor. A water supplying apparatus for executing a washing process, a cleaning process and a working process of a subject, is provided with a water vapor body supplying means for supplying a water vapor body, and a water mist body supplying means for supplying a water mist body containing liquid water fine particles, and the structure is made such that said water vapor body and said water mist body are supplied to the subject by independently controlling said two means.

Abstract: The invention provides a water supplying apparatus and method thereof which has a high capacity of peeling and removing a disused material such as a resist film and the like, and can efficiently use water vapor. A water supplying apparatus for executing a washing process, a cleaning process and a working process of a subject, is provided with a water vapor body supplying means for supplying a water vapor body, and a water mist body supplying means for supplying a water mist body containing liquid water fine particles, and the structure is made such that said water vapor body and said water mist body are supplied to the subject by independently controlling said two means.

Abstract: The invention provides a water supplying apparatus and method thereof which has a high capacity of peeling and removing a disused material such as a resist film and the like, and can efficiently use water vapor. A water supplying apparatus for executing a washing process, a cleaning process and a working process of a subject, is provided with a water vapor body supplying means for supplying a water vapor body, and a water mist body supplying means for supplying a water mist body containing liquid water fine particles, and the structure is made such that said water vapor body and said water mist body are supplied to the subject by independently controlling said two means.

Abstract: A water supply apparatus and a method thereof have a high capability of peeling-off and removing unnecessary objects such as a resist film, and parameters for setting efficient water supply conditions. The water supply apparatus and the method are designed to supply water for cleaning, peeling-off, or treating a target article. On a surface of the target article to be processed, a nozzle device is provided for spraying a mixture of water vapor and water mist. At least the following parameters are respectively set as water supply conditions to proper values so as to supply water to the target article, and these parameters include (1) a weight ratio of water vapor to water mist on the surface to be processed, (2) a temperature of the surface to be processed, and (3) a distance between a (water) blowing port of the nozzle device and the surface to be processed.

Abstract: The invention provides a water supplying apparatus and method thereof which has a high capacity of peeling and removing a disused material such as a resist film and the like, and can efficiently use water vapor. A water supplying apparatus for executing a washing process, a cleaning process and a working process of a subject, is provided with a water vapor body supplying means for supplying a water vapor body, and a water mist body supplying means for supplying a water mist body containing liquid water fine particles, and the structure is made such that said water vapor body and said water mist body are supplied to the subject by independently controlling said two means.

Abstract: A silicon nitride or silicon oxynitride film is deposited by plasma enhanced chemical vapor deposition from a precursor gas mixture of a silane, a nitrogen-containing organosilane and a nitrogen-containing gas at low temperatures of 300.degree.-400.degree. C. and pressure of 1-10 Torr. The silicon nitride films have low carbon content and low hydrogen content, low wet etch rates and they form conformal films over stepped topography.

Abstract: A silicon nitride or silicon oxynitride film is deposited by plasma enhanced chemical vapor deposition from a precursor gas mixture of a silane, a nitrogen-containing organosilane and a nitrogen-containing gas at low temperatures of 300.degree.-400.degree. C. and pressure of 1-10 Torr. The silicon nitride films have low carbon content and low hydrogen content, low wet etch rates and they form conformal films over stepped topography.

Abstract: An improvement in a method for cleaning a CVD deposition chamber in a semiconductor wafer processing apparatus is described. The improvement comprises the treatment of fluorine residues in the CVD deposition chamber, left from a prior fluorine plasma cleaning step, by contacting such fluorine residues with one or more reducing gases which will react with the fluorine residues to form one or more gaseous or solid reaction products or a mixture of same.

Abstract: An improvement in a method for cleaning a CVD deposition chamber in a semiconductor wafer processing apparatus is described. The improvement comprises the treatment of fluorine residues in the CVD deposition chamber, left from a prior fluorine plasma cleaning step, by contacting such fluorine residues with one or more reducing gases which will react with the fluorine residues to form one or more gaseous or solid reaction products or a mixture of same.

Abstract: A process for manufacturing a bipolar semiconductor device. An epitaxial layer is formed on a silicon wafer, and a base layer is formed by the diffusion of impurities having one conductivity type in a part of the epitaxial layer. Impurities having the opposite conductivity type are deposited in a part of the base layer, polycrystalline silicon is deposited on the entire surface of the wafer which is provided with windows for emitter, base and collector electrodes, and a gold-containing film is applied on the entire surface of the polycrystalline silicon layer. Impurities having the opposite conductivity type are deposited and driven into the base layer so as to form an emitter layer and simultaneously gold atoms are driven in through the collector windows into a collector layer of the epitaxial layer and through the base and emitter windows into the collector layer.