Abstract: This silicon electrode plate for plasma etching is a silicon electrode plate for plasma etching with superior durability including silicon single crystal which, in terms of atomic ratio, contains 3 to 11 ppba of boron, and further contains a total of 0.5 to 6 ppba of either or both of phosphorus and arsenic.

Abstract: This silicon electrode plate for plasma etching is a silicon electrode plate for plasma etching with superior durability including silicon single crystal which, in terms of atomic ratio, contains 3 to 11 ppba of boron, and further contains a total of 0.5 to 6 ppba of either or both of phosphorus and arsenic.

Abstract: A semiconductor chip includes a substrate having a main surface, the main surface including a flame-shaped first area, which is along sides of the main surface, and a second area encompassed by the first area, a pad formed in the first area and a bump electrode formed on the pad, and at least one supporting member formed in the second area.

Abstract: A semiconductor chip includes a substrate having a main surface, the main surface including a flame-shaped first area, which is along sides of the main surface, and a second area encompassed by the first area, a pad formed in the first area and a bump electrode formed on the pad, and at least one supporting member formed in the second area.

Abstract: A semiconductor chip includes a substrate having a main surface, the main surface including a flame-shaped first area, which is along sides of the main surface, and a second area encompassed by the first area, a pad formed in the first area and a bump electrode formed on the pad, and at least one supporting member formed in the second area.

Abstract: A probe whose characteristic impedance can be accurately adjusted to a desired value with the production of a small number of prototypes. The probe includes a first line with a signal terminal to be connected to a signal electrode of a circuit to be measured and at least one first region connected to the signal terminal and to which one end of a chip capacitor is connected, a second line connected to a terminal of the first line and a junction to be connected to a measuring instrument at the remaining terminal, and an impedance matched to a characteristic impedance of the measuring instrument, a ground connector with a ground terminal to be connected to the ground electrode of the circuit to be measured, and at least one second region connected to the ground terminal and on which the remaining terminal of the chip capacitor is mounted in one-to-one correspondence with the first region.

Abstract: A semiconductor chip includes a substrate having a main surface, the main surface including a flame-shaped first area, which is along sides of the main surface, and a second area encompassed by the first area, a pad formed in the first area and a bump electrode formed on the pad, and at least one supporting member formed in the second area.

Abstract: Provided is a probe whose characteristic impedance can be accurately adjusted to the desired value with the production of a small number of prototypes.

Abstract: A reflow mounting method and a semiconductor device for efficient manufacture of TCPs superior in reliability by preventing the deformation of leads and ensuring a dependable contact between the bonding pads on a circuit board and the leads, wherein metal pieces arranged as weights on the leads are temporarily positioned adequately to specified bonding pads, thus restraining the leads from shifting from appropriate positions, which may occur if the leads deform, and wherein the metal pieces become wettable by bonding agent when heated, thus making sure that the leads are firmly fixed between the metal pieces and the bonding pads.