Abstract: The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected onto an adherend, the film having a light transmittance at a wavelength of 532 nm or 1064 nm of 20% or less, and having a contrast between a marking part and a part other than the marking part after laser marking of 20% or more.

Abstract: The present invention relates to a dicing tape-integrated film for semiconductor back surface including: a dicing tape including a base material and a pressure-sensitive adhesive layer laminated in this order, and a film for semiconductor back surface provided on the pressure-sensitive adhesive layer of the dicing tape, where the pressure-sensitive adhesive layer has a thickness of from 20 ?m to 40 ?m.

Abstract: The present invention relates to a film for flip chip type semiconductor back surface to be formed on the back surface of a semiconductor element flip chip-connected to an adherend, the film for flip chip type semiconductor back surface having a tensile storage elastic modulus at 25° C. after thermal curing within a range of from 10 GPa to 30 GPa, in which the tensile storage elastic modulus at 25° C. after thermal curing of the film for flip chip type semiconductor back surface falls within a range of from 4 times to 20 times the tensile storage elastic modulus at 25° C. before thermal curing thereof.

Abstract: The film for back surface of flip-chip semiconductor according to the present invention is a film for back surface of flip-chip semiconductor to be formed on a back surface of a semiconductor element having been flip-chip connected onto an adherend, wherein a tensile storage elastic modulus at 23° C. after thermal curing is 10 GPa or more and not more than 50 GPa. According to the film for back surface of flip-chip semiconductor of the present invention, since it is formed on the back surface of a semiconductor element having been flip-chip connected onto an adherend, it fulfills a function to protect the semiconductor element. In addition, since the film for back surface of flip-chip semiconductor according to the present invention has a tensile storage elastic modulus at 23° C. after thermal curing of 10 GPa or more, a warp of the semiconductor element generated at the time of flip-chip connection of a semiconductor element onto an adherend can be effectively suppressed or prevented.

Abstract: The present invention relates to a film for back surface of flip-chip semiconductor, which is to be formed on a back surface of a semiconductor element flip-chip connected onto an adherend, wherein an amount of shrinkage of the film for back surface of flip-chip semiconductor due to thermal curing is 2% by volume or more and not more than 30% by volume relative to a total volume of the film for back surface of flip-chip semiconductor before the thermal curing. According to the film for back surface of flip-chip semiconductor according to the present invention, since it is formed on the back surface of a semiconductor element having been flip-chip connected onto an adherend, it fulfills a function to protect the semiconductor element.

Abstract: The present invention provides a film for flip chip type semiconductor back surface, which is to be formed on a back surface of a semiconductor element flip-chip connected on an adherend, the film including a wafer adhesion layer and a laser marking layer, in which the wafer adhesion layer has an elastic modulus (at 50° C.) of 10 MPa or less and the laser marking layer has an elastic modulus (at 50° C.) of 100 MPa or more.

Abstract: Provided is a method of manufacturing a semiconductor device wherein the space between semiconductor elements that are three-dimensionally mounted can be filled easily and securely. The method of manufacturing a semiconductor device of the present invention includes preparing a semiconductor wafer with a plurality of members for connection formed on both first and second surfaces; preparing a laminated film including a dicing sheet with a pressure-sensitive adhesive layer laminated on a base material, and a curable film that is laminated on the pressure-sensitive adhesive layer and has a thickness equivalent to or more than the height of the member for connection on the first surface; pasting the curable film of the laminated film to the semiconductor wafer while facing the curable film to the first surface so that the members for connection are not exposed to the pressure-sensitive adhesive layer; and dicing the semiconductor wafer to form a semiconductor element.

Abstract: The present invention provides a dicing tape-integrated film for semiconductor back surface, including: a dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material; and a film for flip chip type semiconductor back surface provided on the pressure-sensitive adhesive layer, in which the film for flip chip type semiconductor back surface has a storage elastic modulus (at 60° C.) of from 0.9 MPa to 15 MPa.

Abstract: The present invention relates to a dicing tape-integrated film for semiconductor back surface including: a dicing tape including a base material and a pressure-sensitive adhesive layer laminated in this order, and a film for semiconductor back surface provided on the pressure-sensitive adhesive layer of the dicing tape, where the pressure-sensitive adhesive layer has a thickness of from 20 ?m to 40 ?m.

Abstract: Provided is an adhesive film for a semiconductor device that is capable of having the same physical properties as these at the time of manufacture even after it is stored for a long time. The adhesive film for a semiconductor device of the present invention contains a thermosetting resin, and in which the amount of reaction heat generated in a temperature range of ±80° C. of a reaction heat peak temperature measured by a differential scanning calorimeter after the adhesive film is stored at 25° C. for 4 weeks is 0.8 to 1 time the amount of reaction heat generated before storage.

Abstract: Provided is a laminated film wherein the space between semiconductor elements that are three-dimensionally mounted can be filled easily and securely. The laminated film of the present invention is a laminated film for filling the space between semiconductor elements that are electrically connected through a member or connection, the film including a dicing sheet in which a pressure-sensitive adhesive layer is laminated on a base material and a curable film that is laminated on the pressure-sensitive adhesive layer, wherein the curable film has a lowest melt viscosity at 50 to 200° C. of 1×102 Pa·s or more and 1×104 Pa·s or less.

Abstract: Provided is a method of manufacturing a semiconductor device wherein the space between semiconductor elements that are three-dimensionally mounted can be filled easily and securely. The method of manufacturing a semiconductor device of the present invention includes preparing a semiconductor wafer with a plurality of members for connection formed on both first and second surfaces; preparing a laminated film including a dicing sheet with a pressure-sensitive adhesive layer laminated on a base material, and a curable film that is laminated on the pressure-sensitive adhesive layer and has a thickness equivalent to or more than the height of the member for connection on the first surface; pasting the curable film of the laminated film to the semiconductor wafer while facing the curable film to the first surface so that the members for connection are not exposed to the pressure-sensitive adhesive layer; and dicing the semiconductor wafer to form a semiconductor element.

Abstract: The present invention relates to a dicing tape-integrated film for semiconductor back surface including: a dicing tape including a base material and a pressure-sensitive adhesive layer laminated in this order, and a film for semiconductor back surface provided on the pressure-sensitive adhesive layer of the dicing tape, where the pressure-sensitive adhesive layer has a thickness of from 20 ?m to 40 ?m.

Abstract: The present invention provides a dicing tape-integrated wafer back surface protective film including: a dicing tape including a base material and a pressure-sensitive adhesive layer formed on the base material; and a wafer back surface protective film formed on the pressure-sensitive adhesive layer of the dicing tape, in which the wafer back surface protective film is colored. It is preferable that the colored wafer back surface protective film has a laser marking ability. The dicing tape-integrated wafer back surface protective film can be suitably used for a flip chip-mounted semiconductor device.

Abstract: An epoxy resin composition for semiconductor encapsulation, which comprises: (A) an epoxy resin having at least two epoxy groups in a molecule thereof; (B) a compound having at least two phenolic hydroxyl groups in a molecule thereof; and (C) particles of a compound represented by general formula (1), the particles having a maximum particle diameter of not greater than 30 ?m and a standard deviation of not greater than 5 ?m, the particles being dispersed in the epoxy resin composition: wherein X1 to X5, which may be the same or different, are each a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or a fluorine atom. The epoxy resin composition is an encapsulation material excellent in pot life, fluidity and curability, and has a lower chloride ion content. The epoxy resin composition provides a highly reliable semiconductor device excellent in moisture resistant reliability.

Abstract: The present invention aims to provide a method of manufacturing a semiconductor device that is capable of preventing cracks in a low dielectric material layer of a semiconductor wafer, while also suppressing an increase in the number of steps in the manufacturing process. This object is achieved by a method of manufacturing a semiconductor device including the steps of pasting a film for forming a protective layer in which a support base, an adhesive layer, and a thermosetting resin layer are laminated, in that order, onto a bumped wafer in which a low dielectric material layer is formed, with the thermosetting resin layer serving as a pasting surface, and further, peeling the support base and the adhesive layer from the thermosetting resin layer, forming a protective layer by thermally curing the thermosetting resin layer, and dicing the bumped wafer and the protective layer together.

Abstract: The present invention aims to provide a film for forming a protective layer that is capable of preventing cracks in a low dielectric material layer of a semiconductor wafer while suppressing an increase in the number of steps in the manufacture of a semiconductor device. This object is achieved by a film for forming a protective layer on a bumped wafer in which a low dielectric material layer is formed, including a support base, an adhesive layer, and a thermosetting resin layer, laminated in this order, wherein the melt viscosity of the thermosetting resin layer is 1×102 Pa·S or more and 2×104 Pa·S or less, and the shear modulus of the adhesive layer is 1×103 Pa or more and 2×106 Pa or less, when the thermosetting resin layer has a temperature in a range of 50 to 120° C.

Abstract: The present invention provides a dicing tape-integrated wafer back surface protective film including: a dicing tape including a base material and a pressure-sensitive adhesive layer formed on the base material; and a wafer back surface protective film formed on the pressure-sensitive adhesive layer of the dicing tape, in which the wafer back surface protective film is colored. It is preferable that the colored wafer back surface protective film has a laser marking ability. The dicing tape-integrated wafer back surface protective film can be suitably used for a flip chip-mounted semiconductor device.

Abstract: An object of the present invention is to provide a thermosetting die-bonding film having both storage modulus and high adhering strength that are necessary in manufacturing a semiconductor device and to provide a dicing die-bonding film including the thermosetting die-bonding film. The thermosetting die-bonding film of the present invention is a thermosetting die-bonding film that is used in manufacture of a semiconductor device and includes at least an epoxy resin, a phenol resin, an acrylic copolymer, and a filler, has a storage modulus at 80 to 140° C. before thermal curing in a range of 10 kPa to 10 MPa and a storage modulus at 175° C. before thermal curing in a range of 0.1 to 3 MPa.

Abstract: The present invention relates to a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material having an asperities-formed surface, and a pressure-sensitive adhesive layer laminated on the base material, and a film for semiconductor back surface laminated on the pressure-sensitive adhesive layer of the dicing tape, in which the dicing tape has a haze of at most 45%.