Abstract: A plasma processing apparatus includes a stage for supporting a target object in a chamber defined by a chamber body. The stage includes a lower electrode, an electrostatic chuck provided on the lower electrode, heaters provided in the electrostatic chuck, and terminals electrically connected to the heaters. A conductor pipe electrically connects a high frequency power supply and the lower electrode and extends from the lower electrode to the outside of the chamber body. Power supply lines supply power from a heater controller to the heaters. Filters partially forming the power supply lines prevent the inflow of high frequency power from the heaters to the heater controller. The power supply lines include wirings which respectively connect the terminals and the filters and extend to the outside of the chamber body through an inner bore of the conductor pipe.

Abstract: There is provided a filter device. In the filter device, a plurality of coils are arranged coaxially. Each of a plurality of wirings is electrically connected to one end of each of the coils. Each of a plurality of capacitors is connected between the other end of each of the coils and the ground. A housing is electrically grounded and configured to accommodate therein the coils. Further, each of the wirings at least partially extends into the housing and has a length that is adjustable in the housing.

Abstract: A stage according to an exemplary embodiment has an electrostatic chuck. The electrostatic chuck has a base and a chuck main body. The chuck main body is provided on the base and configured to hold a substrate with electrostatic attractive force. The chuck main body has a plurality of first heaters and a plurality of second heaters. The number of second heaters is larger than the number of first heaters. The first heater controller drives the plurality of first heaters by an alternating current output or a direct current output from a first power source. The second heater controller drives the plurality of second heaters by an alternating current output or a direct current output from a second power source which has electric power lower than electric power of the output from the first power source.

Abstract: An apparatus for measuring parameters of plasma includes a cutoff probe. The cutoff probe includes: a first antenna having a line shape and configured to emit a microwave to the plasma in response to the signal provided by at least one processor; a second antenna having a line shape and configured to generate an electrical signal in response to receiving the microwave emitted by the first antenna and transferred through the plasma; a first insulating layer; a second insulating layer; a first shield; a second shield; an end protection layer covering an end of each of the first insulating layer, the second insulating layer, the first shield, and the second shield; a first antenna protection layer, of insulating nature, covering the first antenna; and a second antenna protection layer, of insulating nature, covering the second antenna.

Abstract: A plasma processing apparatus includes a stage for supporting a target object in a chamber defined by a chamber body. The stage includes a lower electrode, an electrostatic chuck provided on the lower electrode, heaters provided in the electrostatic chuck, and terminals electrically connected to the heaters. A conductor pipe electrically connects a high frequency power supply and the lower electrode and extends from the lower electrode to the outside of the chamber body. Power supply lines supply power from a heater controller to the heaters. Filters partially forming the power supply lines prevent the inflow of high frequency power from the heaters to the heater controller. The power supply lines include wirings which respectively connect the terminals and the filters and extend to the outside of the chamber body through an inner bore of the conductor pipe.

Abstract: Provided is a filter device includes: a first coil group including a plurality of coils arranged along a central axis and spirally wound with a first inner diameter; and a second coil group including a plurality of coils arranged along the central axis and spirally wound with a second inner diameter larger than the first inner diameter. A pitch between respective turns of the plurality of coils of the second coil group is larger than a pitch between respective turns of the plurality of coils of the first coil group.

Abstract: An impedance measurement jig may include a first contact plate, a second contact plate, a cover plate, a plug, and an analyzer. The first contact plate may make electrical contact with an ESC in a substrate-processing apparatus. The second contact plate may make electrical contact with a focus ring configured to surround the ESC. The cover plate may be configured to cover an upper surface of the substrate-processing apparatus. The plug may be installed at the cover plate to selectively make contact with the first contact plate or the second contact plate. The analyzer may individually apply a power to the first contact plate and the second contact plate through the plug to measure an impedance of the ESC and an impedance of the focus ring. Thus, the impedances of the ESC and the focus ring may be individually measured to inspect the ESC and/or the focus ring.

Abstract: A plasma processing apparatus includes; a chamber, a lower electrode disposed within the chamber and including a lower surface and an opposing upper surface configured to seat a wafer, an RF rod disposed on the lower surface of the lower electrode and extending in a vertical direction. The RF plate includes a first portion contacting the lower surface of the lower electrode, a second portion protruding from the first portion towards the RF rod, and a third portion extending from the second portion to connect the RF rod. A grounding electrode is spaced apart from the RF plate and at least partially surrounds a side wall of the RF rod and a side wall of the second portion of the RF plate. The grounding electrode includes a first grounding electrode facing each of the side wall of the RF rod and the second portion of the RF plate, and a second grounding electrode at least partially surrounding the first grounding electrode, and configured to horizontally rotate.

Abstract: A plasma processing apparatus includes a stage for supporting a target object in a chamber defined by a chamber body. The stage includes a lower electrode, an electrostatic chuck provided on the lower electrode, heaters provided in the electrostatic chuck, and terminals electrically connected to the heaters. A conductor pipe electrically connects a high frequency power supply and the lower electrode and extends from the lower electrode to the outside of the chamber body. Power supply lines supply power from a heater controller to the heaters. Filters partially forming the power supply lines prevent the inflow of high frequency power from the heaters to the heater controller. The power supply lines include wirings which respectively connect the terminals and the filters and extend to the outside of the chamber body through an inner bore of the conductor pipe.

Abstract: Provided is a filter device including a plurality of coils, a plural of capacitors, and a frame. The coils constitute a plurality of coil groups. Each coil group includes two or more coils. The two or more coils in each coil group are provided such that respective windings of the two or more coils extend spirally about a central axis and respective turns of the two or more coils are sequentially and repeatedly arranged in an axial direction in which the central axis extends. The coil groups are provided coaxially with the central axis. A pitch between the respective turns of the two or more coils of any one coil group among the coil groups is larger than a pitch between the respective turns of the two or more coils of the coil group provided inside the one coil group among the coil groups.

Abstract: In a plasma processing apparatus, a high frequency power source is electrically connected to a lower electrode of a supporting table through a power feeding unit. The power feeding unit is surrounded by a conductor pipe outside the chamber. An electrostatic chuck of the supporting table has therein a plurality of heaters. A filter device is provided between the heaters and a heater controller. The filter device includes a plurality of coil groups, each of the coil groups including two or more coils. In each of the coil groups, the two or more coils are arranged such that winding portions of the two or more coils extend in a spiral shape around a central axis and turns of the winding portions are arranged sequentially and repeatedly, and the coil groups are provided coaxially to the central axis to surround the conductor pipe directly below the chamber.

Abstract: A plasma processing apparatus includes; a chamber, a lower electrode disposed within the chamber and including a lower surface and an opposing upper surface configured to seat a wafer, an RF rod disposed on the lower surface of the lower electrode and extending in a vertical direction. The RF plate includes a first portion contacting the lower surface of the lower electrode, a second portion protruding from the first portion towards the RF rod, and a third portion extending from the second portion to connect the RF rod. A grounding electrode is spaced apart from the RF plate and at least partially surrounds a side wall of the RF rod and a side wall of the second portion of the RF plate. The grounding electrode includes a first grounding electrode facing each of the side wall of the RF rod and the second portion of the RF plate, and a second grounding electrode at least partially surrounding the first grounding electrode, and configured to horizontally rotate.

Abstract: A plasma processing method for a workpiece in a plasma processing apparatus includes (i) performing a first plasma processing on a workpiece, and (ii) performing a second plasma processing on the workpiece. Power of second radio frequency waves set in the second plasma processing is greater than the power of the second radio frequency waves set in the first plasma processing. In the second plasma processing, a magnetic field distribution having a horizontal component on an edge side of the workpiece greater than a horizontal component on a center of the workpiece is formed by an electromagnet.

Abstract: A plasma processing apparatus includes at least one asymmetry member that causes a non-uniformity of plasma density around the high frequency electrode; and a plasma density distribution controller that is arranged depending on arrangement of the at least one asymmetry member to suppress the non-uniformity of plasma density around the high frequency electrode in the azimuthal direction. The plasma density distribution controller includes a first conductor which has first and second surfaces facing opposite directions to each other and is electrically connected with the rear surface of the high frequency electrode with respect to the first high frequency power; and a second conductor which includes a first connecting portion(s) electrically connected with a portion of the second surface of the first conductor and a second connecting portion electrically connected with a conductive grounding member electrically grounded around the high frequency electrode with respect to the first high frequency power.

Abstract: A stage according to an exemplary embodiment has an electrostatic chuck. The electrostatic chuck has a base and a chuck main body. The chuck main body is provided on the base and configured to hold a substrate with electrostatic attractive force. The chuck main body has a plurality of first heaters and a plurality of second heaters. The number of second heaters is larger than the number of first heaters. The first heater controller drives the plurality of first heaters by an alternating current output or a direct current output from a first power source. The second heater controller drives the plurality of second heaters by an alternating current output or a direct current output from a second power source which has electric power lower than electric power of the output from the first power source.

Abstract: A filter device includes a plurality of coils of which central axes are spaced apart from one another and in parallel to one another and a plurality of ground members spaced apart from one another and extending in parallel to the central axes of the coils outside of the coils. Each of the coils is spaced apart from another coil closest thereto by a first distance. Each of the ground members is spaced apart from a coil closest thereto by a second distance. The number of ground members spaced apart from each of the coils by the second distance is the same.

Abstract: A stage according to an exemplary embodiment has an electrostatic chuck. The electrostatic chuck has a base and a chuck main body. The chuck main body is provided on the base and configured to hold a substrate with electrostatic attractive force. The chuck main body has a plurality of first heaters and a plurality of second heaters. The number of second heaters is larger than the number of first heaters. The first heater controller drives the plurality of first heaters by an alternating current output or a direct current output from a first power source. The second heater controller drives the plurality of second heaters by an alternating current output or a direct current output from a second power source which has electric power lower than electric power of the output from the first power source.

Abstract: A plasma processing apparatus includes a stage including a lower electrode in an inner space of a chamber main body. An upper electrode is provided above the stage. A first radio frequency power supply is electrically connected to the upper electrode through a power feed conductor. A second radio frequency power supply is electrically connected to a lower electrode. A ground conductor extends above the chamber main body to cover the upper electrode. The ground conductor provides an external space at the outside thereof on the side of the inner space. the third portion, the external space being provided on the second portion and above the inner space. The external space is spaced upward from the upper electrode and is shielded from the upper electrode by the ground conductor. An electromagnet is disposed in the external space.

Abstract: A substrate processing apparatus includes a chamber, a pedestal provided in the chamber and having a substrate holding region to hold a substrate thereon, and a gas supply part to supply a gas into the chamber. A plurality of electron gun arrays two-dimensionally arranged so as to cover the substrate holding region is provided and configured to emit electrons toward the gas to cause interactions between the emitted electrons and the gas. A plurality of electron energy control parts is correspondingly provided at each of the electron gun arrays and configured to control energy of the electrons emitted from each of the electron gun arrays independently of each other.

Abstract: A method is provided to design a filter. In the method, a difference between a high frequency to be blocked and a resonance frequency of a distributed constant type reference filter is obtained, the reference filter including a reference coil having windings wound at a plurality of pitches having the same length in an axial direction and a capacitor connected in parallel to the reference coil. When the difference is greater than the predetermined value, a split position in the reference coil where the reference coil is divided into a first coil element and a second coil element connected in series and a split distance between the first coil element and the second coil element to reduce the first difference.