Abstract: A semiconductor device has a super junction structure and includes a first semiconductor layer of the second conductive type disposed on the first column region and the second column region, a second semiconductor layer of the first conductive type disposed on the first semiconductor layer, a first semiconductor region of the first conductive type that is electrically connected to the first electrode and is disposed in a surface layer portion of the second semiconductor layer to be separated from the first semiconductor layer, and a second semiconductor region of the second conductive type that is electrically connected to the second electrode and that is disposed at least in the surface layer portion of the second semiconductor layer to be separated from the first semiconductor region and is electrically connected to the first semiconductor layer.

Abstract: An information processing device includes a processor configured to: acquire renewable power generation information from a renewable energy power generation server; acquire at least one of hydrogen power generation information from a hydrogen power generation server and fuel cell information; acquire grid power generation information from a grid power generation server; acquire electric power information from each of a plurality of consumer facilities in a predetermined area, the electric power information being regarding an amount of electric power consumed by the consumer facility; and generate proposal information including information on a type of electric power supplied to a predetermined consumer facility based on at least one of the renewable power generation information, the hydrogen power generation information, and the fuel cell information, the grid power generation information, and a plurality of pieces of the electric power information, and output the proposal information to the predetermined con

Abstract: Electric field communication that adopts a metal as a communication medium is performed. An electric field communication system communicating through an electric field, includes: a communication medium made of a material capable of transmitting the electric field; a first transmitter that generates an electric field dependent on a potential difference between a first electrode, which is disposed on a side of the communication medium and is connected to the communication medium via a coupling capacitance, and a second electrode connected to an earth ground via a coupling capacitance, with the first electrode being connected on a signal side of the transmitter, and the second electrode being connected on a ground side of the transmitter; and a first receiver disposed in contact with the communication medium, wherein the first transmitter and the first receiver communicate with each other through the electric field via the communication medium.

Abstract: A semiconductor device has a super junction structure and includes a first semiconductor layer of the second conductive type disposed on the first column region and the second column region, a second semiconductor layer of the first conductive type disposed on the first semiconductor layer, a first semiconductor region of the first conductive type that is electrically connected to the first electrode and is disposed in a surface layer portion of the second semiconductor layer to be separated from the first semiconductor layer, and a second semiconductor region of the second conductive type that is electrically connected to the second electrode and that is disposed at least in the surface layer portion of the second semiconductor layer to be separated from the first semiconductor region and is electrically connected to the first semiconductor layer.

Abstract: Electric field communication that adopts a metal as a communication medium is performed. An electric field communication system communicating through an electric field, includes: a communication medium made of a material capable of transmitting the electric field; a first transmitter that generates an electric field dependent on a potential difference between a first electrode, which is disposed on a side of the communication medium and is connected to the communication medium via a coupling capacitance, and a second electrode connected to an earth ground via a coupling capacitance, with the first electrode being connected on a signal side of the transmitter, and the second electrode being connected on a ground side of the transmitter; and a first receiver disposed in contact with the communication medium, wherein the first transmitter and the first receiver communicate with each other through the electric field via the communication medium.

Abstract: In a plasma treatment method, at least a surface of a target object is treated using a plasma treatment apparatus at least including a discharge electrode section configured to cause electric discharge based on supply of a high voltage pulse from a pulse power supply, by supplying fluid including nitrogen into the discharge electrode section to generate plasma by electric discharge in the discharge electrode section and applying resultant active species and the fluid to the target object. The flow rate of the fluid is in a range of 20 mm/s to 500 mm/s. Electrical energy per area of the discharge electrode section in the pulse power supply is 1.4×104 (J/cm2) or more. The separation distance from the center of the discharge electrode section to the target object is in a range of 3 mm to 1700 mm.

Abstract: A semiconductor device contains a semiconductor substrate, a cathode, an anode, and a gate electrode. The semiconductor device has a cathode segment disposed in a portion corresponding to at least the cathode, an anode segment disposed in a portion corresponding to the anode, a plurality of embedded segments disposed in a portion closer to the cathode segment than to the anode segment, a takeoff segment disposed between the gate electrode and the embedded segments to electrically connect the gate electrode to the embedded segments, and a channel segment disposed between the adjacent embedded segments.

Abstract: In a plasma treatment method, at least a surface of a target object is treated using a plasma treatment apparatus at least including a discharge electrode section configured to cause electric discharge based on supply of a high voltage pulse from a pulse power supply, by supplying fluid including nitrogen into the discharge electrode section to generate plasma by electric discharge in the discharge electrode section and applying resultant active species and the fluid to the target object. The flow rate of the fluid is in a range of 20 mm/s to 500 mm/s. Electrical energy per area of the discharge electrode section in the pulse power supply is 1.4×104 (J/cm2) or more. The separation distance from the center of the discharge electrode section to the target object is in a range of 3 mm to 1700 mm.

Abstract: A semiconductor device satisfies the condition Db?(?)×Da, in which Da represents a distance between a top surface of a cathode segment and an end of an embedded gate segment facing an anode segment, and Db represents a distance between a highest-impurity concentration portion in the embedded gate segment and an end of the cathode segment facing the anode segment.

Abstract: A first electrode, a second electrode and a third electrode are provided in a middle of a passage. The second electrode is provided on an upstream side of the first electrode, and the third electrode is provided on a downstream side of the first electrode. A connecting line connects the first electrode to a first pole of a pulsed power supply, and connects the second electrode and the third electrode to a second pole of the pulsed power supply. The first electrode crosses a first gas passing surface and occupies a part of the first gas passing surface. The second electrode and the third electrode cross a second gas passing surface and a third gas passing surface and occupy a part of the second gas passing surface and the third gas passing surface respectively.

Abstract: A gas reforming device including: a flow passage forming body flow passage through which process gas flows; a cathode provided on a cross section of the flow passage; an anode provided apart from the cathode, and including a bar-like portion; and a pulse power supply that applies a pulse voltage between the cathode and the anode. The cathode includes: an opening array body that has at least a surface thereof made of an insulator, and has a planar structure in which openings through which the process gas passes are arrayed; and a grounding electrode provided on a peripheral portion of the flow passage. A tip end of the bar-like portion of the anode is located in an inside of the flow passage of the process gas, and is spaced apart from the opening array body in a direction parallel to a direction where the process gas flows.

Abstract: To provide a plasma igniter capable of generating a discharge such as a pulse streamer discharge in a large region even by application of a low voltage, implementing powerful ignition by pulse voltage application in two or more stages, improving an air-fuel ratio (A/F), and reducing a CO2 emission amount. A plasma igniter includes an igniter part having a combustion chamber, and a discharge part arranged in such a manner that its discharge tip end is exposed to the combustion chamber. The discharge tip end has a column-shaped anode, an annular cathode arranged to be a predetermined interval away from an anode tip end part, and an annular floating electrode arranged between the anode tip end part and the cathode.

Abstract: This invention concerns with the plasma inactivating method and processor that can inactivate the surface of the object without causing the degradation inside of it. The inactivation of toxins on the surface of the object proceeds as removing the toxins by nitriding or oxidizing the toxins by the following triple effects, the sharp pulsed electric field by the supply of the electric pulses, the generated N-radicals (N*) contained inside of the plasma in the surrounding gases composed mainly by N2 gas under the low pressure.

Abstract: A first electrode, a second electrode and a third electrode are provided in a middle of a passage. The second electrode is provided on an upstream side of the first electrode, and the third electrode is provided on a downstream side of the first electrode. A connecting line connects the first electrode to a first pole of a pulsed power supply, and connects the second electrode and the third electrode to a second pole of the pulsed power supply. The first electrode crosses a first gas passing surface and occupies a part of the first gas passing surface. The second electrode and the third electrode cross a second gas passing surface and a third gas passing surface and occupy a part of the second gas passing surface and the third gas passing surface respectively.

Abstract: A gas reforming device including: a flow passage forming body flow passage through which process gas flows; a cathode provided on a cross section of the flow passage; an anode provided apart from the cathode, and including a bar-like portion; and a pulse power supply that applies a pulse voltage between the cathode and the anode. The cathode includes: an opening array body that has at least a surface thereof made of an insulator, and has a planar structure in which openings through which the process gas passes are arrayed; and a grounding electrode provided on a peripheral portion of the flow passage. A tip end of the bar-like portion of the anode is located in an inside of the flow passage of the process gas, and is spaced apart from the opening array body in a direction parallel to a direction where the process gas flows.

Abstract: This invention concerns with the plasma inactivating method and processor that can inactivate the surface of the object without causing the degradation inside of it. The inactivation of toxins on the surface of the object proceeds as removing the toxins by nitriding or oxidizing the toxins by the following triple effects, the sharp pulsed electric field by the supply of the electric pulses, the generated N-radicals (N*) contained inside of the plasma in the surrounding gases composed mainly by N2 gas under the low pressure.

Abstract: A plasma reactor includes a reaction container having an inlet 4 for a reforming target gas and an outlet for a reformed gas, a pair of electrodes that generate plasma and are disposed opposite to each other in an inner space of the reaction container, a pulse power supply that applies a voltage between the pair of electrodes, and a catalyst that promotes a reforming reaction of the reforming target gas, one electrode being a honeycomb electrode that is formed of a conductive ceramic and includes a plurality of cells that are defined by a partition wall, the other electrode being disposed opposite to an end face of the honeycomb electrode, the catalyst being supported on the partition wall of the honeycomb electrode, and a concave surface being formed in a center area of the end face of the honeycomb electrode that opposes the opposite electrode.

Abstract: An aseptization apparatus 1 includes a sealed container 11 forming an aseptization space 191, a nitrogen gas supplying system 12 for converting atmosphere of the aseptization space 191 into nitrogen atmosphere, an electrode pair 13 disposed in the aseptization space 191, a pulse power supply 14 for repeatedly applying an electric pulse to the electrode pair 13, and a mirror 15 for returning a short-wavelength ultraviolet ray going from inside of the aseptization space 191 to outside to inside of the aseptization space 191.

Abstract: To provide a plasma igniter capable of generating a discharge such as a pulse streamer discharge in a large region even by application of a low voltage, implementing powerful ignition by pulse voltage application in two or more stages, improving an air-fuel ratio (A/F), and reducing a CO2 emission amount. A plasma igniter includes an igniter part having a combustion chamber, and a discharge part arranged in such a manner that its discharge tip end is exposed to the combustion chamber. The discharge tip end has a column-shaped anode, an annular cathode arranged to be a predetermined interval away from an anode tip end part, and an annular floating electrode arranged between the anode tip end part and the cathode.

Abstract: A surface treatment apparatus encompasses a gas introducing system configured to introduce a process gas from downstream end of a tubular treatment object; a vacuum evacuating system configured to evacuate the process gas from other end of the treatment object; an excited particle supplying system disposed at upstream side of the treatment object, configured to supply excited particles for inducing initial discharge in a main body of the treatment object; and a first main electrode and a second main electrode disposed oppositely to each other, defining a treating region of the treatment object as a main plasma generating region disposed therebetween, wherein the excited particle supplying system is driven at least until generation of main plasma, and main pulse of duty ratio of 10?7 to 10?1 is applied across the first main electrode and second main electrode, to generate a non-thermal equilibrium plasma flow in the inside of the treatment object, and thereby an inner surface of the treatment object is treated