Patents by Inventor Naohito Kato

Naohito Kato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device constituting bipolar transistor
    Patent number: 4994880
    Abstract: Base regions of first and second stage transistors are formed in a semiconductor substrate consisting of low and high resistivity collector layers, and emitter regions are formed in the respective base regions. The emitter region of the second stage transistor has an interdigital structure with a plurality of finger portions, and an emitter surface electrode is formed on the emitter region of the second stage transistor. The second stage transistor emitter surface electrode has an extending portion at a position spaced apart from a transistor operation region where the finger portions are formed. An emitter connection electrode is formed on the extending portion, and a lead is connected by soldering or the like to the emitter connection electrode.
    Type: Grant
    Filed: September 25, 1989
    Date of Patent: February 19, 1991
    Assignee: Nippondenso Co., Ltd.
    Inventors: Naohito Kato, Yoshiyuki Miyase, Tomoatsu Makino, Kasuhiro Yamada, Masami Yamaoka, Takeshi Matsui, Masahiro Yamamoto, Yoshiki Ishida, Tohru Nomura