Abstract: The present techniques provide a semiconductor light-emitting device in which current diffusion is ensured in a transparent electrode and light absorption by the transparent electrode is suppressed. The light-emitting device comprises an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a transparent electrode, a transparent insulating film, and a reflection electrode. The transparent electrode contains In. The thickness of the transparent electrode is 10 nm to 150 nm. The reflection electrode is a p-type electrode. The reflection electrode P1 has a plurality of contact electrodes being in contact with the transparent electrode at a plurality of openings. The number density of the contact electrodes is 400/mm2 to 1,000/mm2.

Abstract: The present techniques provide a semiconductor light-emitting device in which current diffusion is ensured in a transparent electrode and light absorption by the transparent electrode is suppressed. The light-emitting device comprises an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a transparent electrode, a transparent insulating film, and a reflection electrode. The transparent electrode contains In. The thickness of the transparent electrode is 10 nm to 150 nm. The reflection electrode is a p-type electrode. The reflection electrode P1 has a plurality of contact electrodes being in contact with the transparent electrode at a plurality of openings. The number density of the contact electrodes is 400/mm2 to 1,000/mm2.

Abstract: The present invention provides a light-emitting part and a light-emitting apparatus exhibiting high brightness per unit area, and simplified production methods therefor. The light-emitting unit comprises a single base substrate, and a plurality of light-emitting devices thereon. The light-emitting unit includes a serial connection body which connects at least a part of the light-emitting devices in series. The serial connection body comprises light-emitting devices which make a current path, a light-emitting device which does not make a current path, and a connection member which electrically connects an n-electrode and a p-electrode of the light-emitting devices.

Abstract: The present invention provides a light-emitting part and a light-emitting apparatus exhibiting high brightness per unit area, and simplified production methods therefor. The light-emitting unit comprises a single base substrate, and a plurality of light-emitting devices thereon. The light-emitting unit includes a serial connection body which connects at least a part of the light-emitting devices in series. The serial connection body comprises light-emitting devices which make a current path, a light-emitting device which does not make a current path, and a connection member which electrically connects an n-electrode and a p-electrode of the light-emitting devices.

Abstract: A group III nitride semiconductor light-emitting device includes: a conductive support; a p-electrode positioned on the support, a p-type layer containing a group III nitride semiconductor, an active layer and an n-type layer having a first surface, which are positioned in turn on the p-electrode; and an n-electrode positioned on the first surface of the n-type layer. A groove is formed in the first surface of the n-type layer in a pattern such that the first surface of the n-type layer is continuous. A light-transmitting insulating film is formed on side surface and bottom surface of the groove. The groove has a depth at least reaching the p-type layer. The n-electrode is formed in wiring form.

Abstract: The invention provides a Group III nitride semiconductor light-emitting device which has a light extraction face at the n-layer side and which provides high light emission efficiency. The light-emitting device is produced through the laser lift-off technique. The surface of the n-GaN layer of the light-emitting device is roughened. On the n-GaN layer, a transparent film is formed. The transparent film satisfies the following relationship: 0.28?n×d1×2/??0.42 or 0.63?n×d1×2/??0.77, wherein n represents the refractive index of the transparent film, d1 represents the thickness of the transparent film in the direction orthogonal to an inclined face thereof, and ? represents the wavelength of the light emitted from the MQW layer.

Abstract: A method for producing a Group III nitride compound semiconductor element includes growing an epitaxial layer containing a Group III nitride compound semiconductor using a different kind of substrate as an epitaxial growth substrate, adhering a supporting substrate to the top surface of the epitaxial growth layer through a conductive layer, and then removing the epitaxial growth substrate by laser lift-off. Before adhesion of the epitaxial layer and the supporting substrate, a first groove that at least reaches an interface between the bottom surface of the epitaxial layer and the epitaxial growth substrate from the top surface of the epitaxial layer formed on the epitaxial growth substrate and acts as an air vent communicating with the outside of a wafer when the epitaxial layer and the supporting substrate are joined to each other.

Abstract: In the Group III nitride-based compound semiconductor light-emitting device of the invention, an non-light-emitting area is formed in a light-emitting layer. In a light-emitting diode where light is extracted on the side of an n-layer, an outer wiring trace portion and an inner wiring trace portion of an n-contact electrode impedes light emission from the light-emitting layer. Therefore, there are provided, at the interface between a p-layer and a p-contact electrode, high-resistance faces having a width wider than the orthogonal projections of contact areas between the outer and inner wiring trace portions and the n-layer on the interface between the p-contact electrode and the p-layer. Through this configuration, current flow is limited, and portions having a total area equivalent to that of the high-resistance faces of the light-emitting layer serve as non-light-emitting areas.

Abstract: A group III nitride semiconductor light-emitting element having improved light extraction efficiency is provided. The light-emitting element has a plurality of dot-like grooves formed on a surface at the side joining to a p-electrode of a p-type layer. The groove has a depth reaching an n-type layer. Side surface of the groove is slanted such that a cross-section in an element surface direction is decreased toward the n-type layer from the p-type layer. Fine irregularities are formed on the surface at the side joining to an n-electrode of the n-type layer, except for a region on which the n-electrode is formed, and a translucent insulating film having a refractive index of from 1.5 to 2.3 is formed on the fine irregularities. Light extraction efficiency is improved by reflection of light to the n-type layer side by the groove and prevention of reflection to the n-type layer side by the insulating film.

Abstract: A group III nitride semiconductor light-emitting device includes: a conductive support; a p-electrode positioned on the support, a p-type layer containing a group III nitride semiconductor, an active layer and an n-type layer having a first surface, which are positioned in turn on the p-electrode; and an n-electrode positioned on the first surface of the n-type layer. A groove is formed in the first surface of the n-type layer in a pattern such that the first surface of the n-type layer is continuous. A light-transmitting insulating film is formed on side surface and bottom surface of the groove. The groove has a depth at least reaching the p-type layer. The n-electrode is formed in wiring form.

Abstract: In the Group III nitride-based compound semiconductor light-emitting device of the invention, an non-light-emitting area is formed in a light-emitting layer. In a light-emitting diode where light is extracted on the side of an n-layer, an outer wiring trace portion and an inner wiring trace portion of an n-contact electrode impedes light emission from the light-emitting layer. Therefore, there are provided, at the interface between a p-layer and a p-contact electrode, high-resistance faces having a width wider than the orthogonal projections of contact areas between the outer and inner wiring trace portions and the n-layer on the interface between the p-contact electrode and the p-layer. Through this configuration, current flow is limited, and portions having a total area equivalent to that of the high-resistance faces of the light-emitting layer serve as non-light-emitting areas.

Abstract: A method for producing a Group III nitride compound semiconductor element includes growing an epitaxial layer containing a Group III nitride compound semiconductor using a different kind of substrate as an epitaxial growth substrate, adhering a supporting substrate to the top surface of the epitaxial growth layer through a conductive layer, and then removing the epitaxial growth substrate by laser lift-off. Before adhesion of the epitaxial layer and the supporting substrate, a first groove that at least reaches an interface between the bottom surface of the epitaxial layer and the epitaxial growth substrate from the top surface of the epitaxial layer formed on the epitaxial growth substrate and acts as an air vent communicating with the outside of a wafer when the epitaxial layer and the supporting substrate are joined to each other.

Abstract: A light emitting element has a well layer formed of a GaN-based semiconductor, a barrier layer next to the well layer, the barrier layer being formed of a GaN-based semiconductor, and a GaN-based semiconductor layer formed between the well layer and the barrier layer. The GaN-based semiconductor layer has a dopant to cancel a piezoelectric field caused between the well layer and the barrier layer.