Abstract: One embodiment relates to an organic electronic material containing a charge transport polymer or oligomer, wherein the charge transport polymer or oligomer has a nitrogen atom and an aromatic hydrocarbon group ArF that is bonded to the nitrogen atom and is substituted with a fluorine atom, and also has a structural unit containing a carbazole structure.

Abstract: An embodiment of the present invention relates to a treatment liquid which contains an ionic compound and a solvent, and is used for adhering the ionic compound to at least one surface selected from the group consisting of a surface on which a layer having hole transport properties is to be formed, and a surface of a layer having hole transport properties.

Abstract: One embodiment relates to an organic electronic material containing a charge transport polymer, wherein the charge transport polymer is a polymer which, when 25 ?L portions of methanol are added dropwise and stirred into 1,000 ?L of a solution containing the charge transport polymer and toluene in a ratio of 20 mg of the charge transport polymer per 2,290 ?L of toluene, the amount of methanol added by the time cloudiness develops in the solution is greater than 350 ?L.

Abstract: The present invention relates to an organic electronic material containing at least an ionic compound represented by general formula (1) shown below and a compound having a charge transport unit. The present invention can provide an organic electronic material that is capable of forming an organic electronic element having a low drive voltage and excellent emission efficiency and lifespan characteristics. In general formula (1), ArF represents a fluoroaryl group or a fluoroheteroaryl group, each of Ra and Rb independently represents a hydrogen atom (H), an alkyl group, a benzyl group, an aryl group or a heteroaryl group, and A represents an anion.

Abstract: One embodiment relates to a branched polymer production method including reacting a monomer component containing at least reactive monomers (1) and (2) described below. The reactive monomer (1) has at least a conjugation unit and three or more reactive functional groups bonded to the conjugation unit, wherein the three or more reactive functional groups include two types of reactive functional groups that are mutually different. The reactive monomer (2) has at least a conjugation unit and two reactive functional groups bonded to the conjugation unit, wherein one of the two reactive functional groups is a group capable of reacting with one type of reactive functional group selected from among the two types of reactive functional groups, and the other of the two reactive functional groups is a group capable of reacting with the other type of reactive functional group selected from among the two types of reactive functional groups.

Abstract: A charge transport material containing at least one charge transport polymer selected from the group consisting of a first charge transport polymer having one or more monovalent conjugated diene-containing groups, and a second charge transport polymer having one or more monovalent dienophile-containing groups.

Abstract: One embodiment relates to a branched polymer production method that includes reacting a monomer component containing at least a reactive monomer (1) described below. The reactive monomer (1) has at least a conjugation unit and three or more reactive functional groups bonded to the conjugation unit, and the three or more reactive functional groups include two types of reactive functional groups that are mutually different.

Abstract: An organic electronic material containing a charge transport compound having at least one of the structural regions represented by formulas (1), (2) and (3) shown below. In the formulas, Ar represents an arylene group or heteroarylene group of 2 to 30 carbon atoms, a represents an integer of 1 to 6, b represents an integer of 2 to 6, c represents an integer of 2 to 6, and X represents a substituted or unsubstituted polymerizable functional group.

Abstract: A charge transport material containing a charge transport polymer that satisfies at least one of (I) or (II) described below: (I) to independently have both a monovalent substituent having an alicyclic structure of 7 or more carbon atoms, and a monovalent substituent having a carbonyl-containing group; and (II) to have a monovalent substituent that includes a monovalent substituent having an alicyclic structure of 7 or more carbon atoms bonded directly to a carbonyl-containing group.

Abstract: A photoelectric conversion element includes an n-type semiconductor substrate, a p-type amorphous semiconductor film on the side of a first surface and side surface of the semiconductor substrate, an n-type amorphous semiconductor film on the first surface side of the semiconductor substrate, a p-electrode on the p-type amorphous semiconductor film, and an n-electrode on the n-type amorphous semiconductor film. The p-electrode is located on the p-type amorphous semiconductor film, which is placed on the first surface side and side surface of the semiconductor substrate.

Abstract: A semiconductor device includes a base, a first wiring line, a semiconductor film, a second wiring line, an insulating film, and a semiconductor auxiliary layer. The first wiring line is provided in the first, second, and third regions of the base. The semiconductor film has one or more low-resistance regions, is provided between the first wiring line and the base in the first region, and is in contact with the first wiring line in the second region. The second wiring line is in contact with the first wiring line in the third region. The insulating film is provided between the first wiring line and the semiconductor film in the first region. The semiconductor auxiliary layer is in contact with the semiconductor film at least in the first region, and assists electrical coupling via the first region.

Abstract: An organic electronic material containing a charge transport polymer for which, in a molecular weight distribution chart measured by GPC, the area ratio accounted for by components having a molecular weight of less than 20,000 is not more than 40%, and the area ratio accounted for by components having a molecular weight of 500 or less is not more than 1%.

Abstract: A semiconductor device includes a substrate, a first wiring line, a semiconductor film, a second wiring line, and an insulating film. The substrate includes first, second, and third regions provided adjacently in this order in a predetermined direction. The first wiring line is provided on the substrate and provided in each of the first, second, and third regions. The semiconductor film has a low-resistance region in at least a portion thereof. The semiconductor film is provided between the first wiring line and the substrate in the first region, and is in contact with the first wiring line in the second region. The second wiring line is provided at a position closer to the substrate than the semiconductor film, and is in contact with the first wiring line in the third region. The insulating film is provided between the first wiring line and the semiconductor film in the first region.

Abstract: An organic electronic material containing a charge transport compound having a structural region represented by formula (I) and having a weight average molecular weight greater than 40,000. —Ar—X—Y—Z??(I) In the formula, Ar represents an arylene group or heteroarylene group of 2 to 30 carbon atoms, X represents a linking group, Y represents an aliphatic hydrocarbon group of 1 to 10 carbon atoms, and Z represents a substituted or unsubstituted polymerizable functional group.

Abstract: Provided are a photoelectric conversion element capable of enhancing characteristics and reliability more than ever before and a method for manufacturing the photoelectric conversion element. The photoelectric conversion element includes a base including a semiconductor substrate, a first i-type semiconductor film placed on a portion of a surface of the semiconductor substrate, a first conductivity-type semiconductor film placed on the first i-type semiconductor film, a second i-type semiconductor film placed on another portion of the surface thereof, and a second conductivity-type semiconductor film placed on the second i-type semiconductor film; an electrode section including a first electrode layer placed on the first conductivity-type semiconductor film and a second electrode layer placed on the second conductivity-type semiconductor film; and a reflective section placed in a gap region A interposed between the first electrode layer and the second electrode layer.

Abstract: A thin film transistor includes a substrate, a semiconductor layer, a first gate insulating film, a second gate insulating film, and a gate electrode. The semiconductor layer is provided in a selective region of the substrate. The first gate insulating film is provided in the selective region of the substrate and covers a surface of the semiconductor layer. The second gate insulating film extends across opposite sides of the first gate insulating film along a channel width direction and covers the first gate insulating film that covers the semiconductor layer. The gate electrode faces the semiconductor layer across the second gate insulating film.

Abstract: One embodiment relates to a charge transport material containing a proton donor and a hole transport polymer having a group represented by formula (Ia) shown below.

Abstract: An embodiment of the present invention relates to an organic electronic material containing a charge transport polymer or oligomer having, at least at one terminal, a condensed polycyclic aromatic hydrocarbon moiety having three or more benzene rings.

Abstract: One embodiment relates to an organic electronic material containing a charge transport polymer or oligomer, wherein the charge transport polymer or oligomer has a structural unit containing an aromatic amine structure substituted with a fluorine atom.

Abstract: There is provided a photoelectric conversion element which includes an n-type single crystal silicon substrate (1). The n-type single crystal silicon substrate (1) includes a central region (11) and an end-portion region (12). The central region (11) is a region which has the same central point as the central point of the n-type single crystal silicon substrate (1) and is surrounded by a circle. The diameter of the circle is set to be a length which is 40% of a length of the shortest side among four sides of the n-type single crystal silicon substrate (1). The central region (11) has a thickness t1. The end-portion region (12) is a region of being within 5 mm from an edge of the n-type single crystal silicon substrate (1). The end-portion region (12) is disposed on an outside of the central region (11) in an in-plane direction of the n-type single crystal silicon substrate (1), and has a thickness t2 which is thinner than the thickness t1.