Abstract: A photochemical electrode includes: an electrically conductive layer; and a photoexcitation material layer provided over the electrically conductive layer and including a photoexcitation material, wherein the photoexcitation material layer is one of a first photoexcitation material layer in which a potential of the conduction band minimum decreases from a second surface opposite to a first surface on the side of the electrically conductive layer toward the first surface and a second photoexcitation material layer in which a potential of the valence band maximum decreases from the second surface toward the first surface.

Abstract: A photochemical electrode includes: an electrically-conductive layer; and a photo-excited material layer including a photo-excited material provided over the electrically-conductive layer, wherein in a surface of the photo-excited material layer, a lattice plane having highest atomic density in a crystal structure of the photo-excited material is oriented in a surface direction of the surface of the photo-excited material layer.

Abstract: A photochemical electrode includes: an electrically conductive layer; and a photoexcitation material layer provided over the electrically conductive layer and including a photoexcitation material, wherein the photoexcitation material layer is one of a first photoexcitation material layer in which a potential of the conduction band minimum decreases from a second surface opposite to a first surface on the side of the electrically conductive layer toward the first surface and a second photoexcitation material layer in which a potential of the valence band maximum decreases from the second surface toward the first surface.

Abstract: A photochemical electrode includes: an electrically-conductive layer; and a photo-excited material layer including a photo-excited material provided over the electrically-conductive layer, wherein in a surface of the photo-excited material layer, a lattice plane having highest atomic density in a crystal structure of the photo-excited material is oriented in a surface direction of the surface of the photo-excited material layer.

Abstract: A photoexcitation material includes: a wurtzite type solid solution crystal containing t gallium, zinc, nitrogen and oxygen, wherein a peak (A) of an existence ratio of nitrogen or oxygen which is a first adjacent atom of the gallium or zinc and a peak (B) of an existence ratio of gallium or zinc which is a second adjacent atom of the gallium or zinc satisfy a relational expression of A>B in a relationship between a distance and the existence ratio of the adjacent atom of the gallium or zinc, the relationship being obtained from an extended X-ray absorption fine structure analysis.

Abstract: A photoexcitation material includes: a wurtzite type solid solution crystal containing t gallium, zinc, nitrogen and oxygen, wherein a peak (A) of an existence ratio of nitrogen or oxygen which is a first adjacent atom of the gallium or zinc and a peak (B) of an existence ratio of gallium or zinc which is a second adjacent atom of the gallium or zinc satisfy a relational expression of A>B in a relationship between a distance and the existence ratio of the adjacent atom of the gallium or zinc, the relationship being obtained from an extended X-ray absorption fine structure analysis.

Abstract: A photoexcitation material includes: a wurtzite type solid solution crystal containing gallium, zinc, nitrogen and oxygen, wherein a peak (A) of an existence ratio of nitrogen or oxygen which is a first adjacent atom of the gallium or zinc and a peak (B) of an existence ratio of gallium or zinc which is a second adjacent atom of the gallium or zinc satisfy a relational expression of A>B in a relationship between a distance and the existence ratio of the adjacent atom of the gallium or zinc, the relationship being obtained from an extended X-ray absorption fine structure analysis.

Abstract: A photoexcitation material includes: a wurtzite type solid solution crystal containing gallium, zinc, nitrogen and oxygen, wherein a peak (A) of an existence ratio of nitrogen or oxygen which is a first adjacent atom of the gallium or zinc and a peak (B) of an existence ratio of gallium or zinc which is a second adjacent atom of the gallium or zinc satisfy a relational expression of A>B in a relationship between a distance and the existence ratio of the adjacent atom of the gallium or zinc, the relationship being obtained from an extended X-ray absorption fine structure analysis.

Abstract: A photochemical electrode includes: an electrically conductive layer; and a photoexcitation material layer provided over the electrically conductive layer and including a photoexcitation material, wherein the photoexcitation material layer is one of a first photoexcitation material layer in which a potential of the conduction band minimum decreases from a second surface opposite to a first surface on the side of the electrically conductive layer toward the first surface and a second photoexcitation material layer in which a potential of the valence band maximum decreases from the second surface toward the first surface.

Abstract: A photochemical electrode includes: an electrically-conductive layer; and a photo-excited material layer including a photo-excited material provided over the electrically-conductive layer, wherein in a surface of the photo-excited material layer, a lattice plane having highest atomic density in a crystal structure of the photo-excited material is oriented in a surface direction of the surface of the photo-excited material layer.

Abstract: An information display device includes a storage area configured to store a display information item for displaying a real image on a display device; a focal length setting unit configured to set a second focal length that is different from a first focal length extending from a user to the real image displayed on the display device; a converting unit configured to convert the display information item stored in the storage area into a converted display information item for displaying a virtual image at the second focal length; and a virtual image displaying unit configured to display the virtual image at the second focal length based on the converted display information item.

Abstract: A SiO2 film is formed as a thermal oxide film on a surface of a Si substrate. Next, the SiO2 film is heat-treated under a nitridation gas atmosphere to be changed to a SION film. As a result, a tensile stress toward a SiON film side acts on atoms existing on a surface layer of the Si substrate to cause distortion, so that the interatomic distance of the Si atoms in the Si substrate becomes longer. An amount of the distortion can be measured by, for example, an X-ray CTR scattering method. Next, a SiN film is formed on the SiON film by a CVD method or the like. The magnitude of the tensile stress acting on the Si substrate differs depending on the thickness of the SiN film. This method improves carrier mobility owing to the displacement of the Si atoms, so that sufficient carrier mobility can be obtained even when nitrogen concentration near an interface between the SiON film and the Si substrate is high.

Abstract: X-rays are irradiated to a sample to be measured including at least one layer of film formed on a substrate; an interference oscillation curve of the X-rays incident on the sample to be measured is measured; and a concentration of an element adhered on a surface of the sample to be measured and/or segregated in an interface of the film is measured. The interference oscillation curve is fitted to an analysis formula expressing an X-ray reflectance to thereby determining a density of a region of the sample to be measured, where the element is adhered or is segregated, and a concentration of the element is computed based on the density.

Abstract: A film thickness measuring method comprises the steps of measuring reflectances of X-rays on a film, extracting interference oscillations from the measured X-ray reflectances, and Fourier transforming the interference oscillations to compute a film thickness of the film, an average reflectance being given by fitting the measured X-ray reflectances to an analysis formula including a term of a product of a power function of an incident angle, which expresses attenuation of reflectances on a smooth surface of the film and an exponent function which expresses influence of roughness of the surface of the film, and a constant term expressing a background added to the product; the interference oscillations being given by using the measured X-ray reflectances and the average reflectance. The film thickness measuring method can extract interference oscillations of a reflectance curve by a method including arbitrariness and by a simple procedure.

Abstract: A method of producing a high temperature superconductor Josephson element for an electronic device or a photodetector comprising the steps of: forming a lower ceramic superconductor film on a substrate; forming an upper ceramic superconductor of a different system ceramic from that of the lower ceramic superconductor film on a portion of the lower ceramic superconductor and on the substrate; and forming an insulating layer (tunnel barrier) between the lower and upper ceramic superconductor films by an interdiffusion therebetween.

Abstract: A method for fabricating a superconductive film composed of a RE.sub.1 Ba.sub.2 Cu.sub.3 O.sub.x compound, or a (Bi.Sr.Ca.Cu.O) compound. In a first embodiment, oxides or carbonates of the component materials, namely Y.sub.2 O.sub.3, BaCO.sub.3, and CuO are mixed in atomic ratios of 1:2:3, according to the chemical formula of RE.sub.1 Ba.sub.2 Cu.sub.3 O.sub.x, and sintered to create a rhombic perovskite structure. The sintered mixture is powdered again, with added powdered amounts of Y.sub.2 O.sub.3 and powdered metallic Cu, and sintered. The sintered product is used as the source for an electron beam evaporator. In a second embodiment the (Bi.Sr.Ca.Cu.O) compound is formed into a sintered pellet which is composed of a mixture of one part of BiO, 3-15 parts of SrCO.sub.3, 4-30 parts of CaCO.sub.3, and 2-5 parts of CuO, in atomic ratios of Bi, Sr, Ca and Cu.