Abstract: A filter circuit includes: a first filter provided in a wiring between a conductive member provided inside the plasma processing apparatus and a power supplier which supplies control power or DC power to the conductive member; and a second filter provided in a wiring between the first filter and the power supplier. The first filter includes a first coil connected in series to the wiring and having no core member. The second filter includes a second coil connected in series to the wiring between the first coil and the power supplier and having core members. The second coil includes a conducting wire arranged on a surface of at least one of the core members opposite to a surface of at least one of the core members facing a hollow inner cylinder, the at least one of the core members being arranged annularly around the inner cylinder.

Abstract: The present invention provides a motor apparatus having a motor, comprising: a fan that is rotatably supported by a shaft member of the motor, and sends, in a centrifugal direction by rotation, gas taken from an axial direction of the shaft member; and a cover member that covers the fan so as to allow the gas sent in the centrifugal direction from the fan to flow along an outer surface of the motor, wherein the cover member has a blowout port that blows out some of the gas sent in the centrifugal direction from the fan in the centrifugal direction to cool an external mechanism of the motor apparatus.

Abstract: A photonic-crystal surface emitting laser includes a first semiconductor layer, a photonic crystal layer having a refractive index higher than a refractive index of the first semiconductor layer and provided on the first semiconductor layer, and an active layer provided opposite to the first semiconductor layer with respect to the photonic crystal layer. The photonic crystal layer has a first region and a plurality of second regions each having a refractive index different from a refractive index of the first region and periodically disposed in the first region in a plane of the photonic crystal layer. The second regions extend from the photonic crystal layer to the first semiconductor layer.

Abstract: A plasma processing apparatus includes: a plasma processing apparatus includes: a plasma processing chamber; a substrate support; a source RF generator coupled to the plasma processing chamber, and configured to generate a source RF pulsed signal; a first bias RF generator configured to generate a first bias RF pulsed signal; a second bias RF generator configured to generate a second bias RF pulsed signal; a first separation circuit connected between the first bias RF generator and the substrate support, and configured to suppress a coupling of the second bias RF pulsed signal from the second bias RF generator to the first bias RF generator, and a second separation circuit connected between the second bias RF generator and the substrate support, and configured to suppress a coupling of the first bias RF pulsed signal from the first bias RF generator to the second bias RF generator.

Abstract: A 1.3 ?m-band wavelength-tunable DBR laser in which a wavelength-tunable amount is extended is disclosed. The wavelength-tunable DBR laser according to an embodiment of the present invention is a wavelength-tunable DBR laser in which an active region having an optical gain and a DBR region including a diffraction grating are integrated monolithically and an oscillation wavelength is changed by injecting a current into the DBR region. At a boundary between a p-side clad layer and a core layer in the DBR region, an electron barrier layer being p-type doped and having a bandgap greater than in the p-side clad layer is further included. At a boundary between an n-side clad layer and the core layer in the DBR region, a hole barrier layer being n-type doped and having a bandgap greater than in the n-side clad layer is further included.

Abstract: A bonding device includes an irradiator that irradiates a surface of a first component with ultraviolet rays, and a conveyor that conveys the first component, wherein the irradiator irradiates the first component held by the conveyor with the ultraviolet ray, and the conveyor conveys the first component irradiated with the ultraviolet rays to a surface of a second component, and brings the surface of the first component and the surface of the second component into contact with each other to bond the first component and the second component.

Abstract: A plasma processing apparatus includes: a source RF generator that generates a source RF pulsed signal of at least three power levels; first and second bias RF generators that generate first and second bias RF pulsed signals of at least two power levels; a synchronization signal generator that generates a synchronization signal; a first matching circuit connected to the source RF generator and an antenna, thereby allowing the source RF pulsed signal to be supplied from the source RF generator to the antenna through the first matching circuit; and a second matching circuit connected to the first and second bias RF generators and a substrate support, thereby allowing the first and second bias RF pulse signals to be supplied from the first and second bias RF generators to the substrate support through the second matching circuit.

Abstract: A semiconductor optical device includes a substrate including a waveguide made of silicon and a semiconductor layer joined to the substrate so as to overlap the waveguide and including a diffraction grating formed of a first semiconductor layer and a second semiconductor layer having different refractive indices. The waveguide includes a bent portion and a plurality of straight portions that are connected to each other by the bent portion and that extend straight. The first semiconductor layer and the second semiconductor layer are each made of a compound semiconductor. The second semiconductor layer is embedded in the first semiconductor layer and includes a plurality of portions arranged in a direction in which the plurality of straight portions extend. The diffraction grating is positioned above the plurality of straight portions.

Abstract: A method for producing a semiconductor optical device includes the steps of bonding a semiconductor chip to an SOI substrate having a waveguide, the semiconductor chip having an optical gain and including a first cladding layer, a core layer, and a second cladding layer that contain III-V group compound semiconductors and are sequentially stacked in this order, forming a covered portion with a first insulating layer on the second cladding layer, etching partway in the thickness direction the second cladding layer exposed from the first insulating film, forming a second insulating film covering from the covered portion to a part of a remaining portion of the second cladding layer, and forming a first tapered portion that is disposed on the waveguide and tapered along the extending direction of the waveguide by etching the core layer and the second cladding layer exposed from the second insulating film.

Abstract: A semiconductor optical device includes a substrate formed of silicon and having a first optical waveguide and a semiconductor element formed of a III-V compound semiconductor and having a second optical waveguide, the semiconductor element being bonded to an upper surface of the substrate. The first optical waveguide and the second optical waveguide form a directional coupler.

Abstract: There is provided an information processing apparatus and an information processing method that can provide more useful information for an action plan of an autonomous mobile body, the information processing apparatus including an action recommendation unit configured to present a recommended action recommended to an autonomous mobile body, to the autonomous mobile body that performs an action plan based on situation estimation. The action recommendation unit determines the recommended action on the basis of an action history collected from a plurality of the autonomous mobile bodies, and on the basis of a situation summary received from a target autonomous mobile body that is a target of recommendation. The information processing method includes presenting, by a processor, a recommended action recommended to an autonomous mobile body, to the autonomous mobile body that performs an action plan based on situation estimation.

Abstract: A method for producing a semiconductor optical device includes the steps of bonding a semiconductor chip to an SOI substrate having a waveguide, the semiconductor chip having an optical gain and including a first cladding layer, a core layer, and a second cladding layer that contain III-V group compound semiconductors and are sequentially stacked in this order, forming a covered portion with a first insulating layer on the second cladding layer, etching partway in the thickness direction the second cladding layer exposed from the first insulating film, forming a second insulating film covering from the covered portion to a part of a remaining portion of the second cladding layer, and forming a first tapered portion that is disposed on the waveguide and tapered along the extending direction of the waveguide by etching the core layer and the second cladding layer exposed from the second insulating film.

Abstract: There is provided an information processing apparatus and an information processing method that can provide more useful information for an action plan of an autonomous mobile body, the information processing apparatus including an action recommendation unit configured to present a recommended action recommended to an autonomous mobile body, to the autonomous mobile body that performs an action plan based on situation estimation. The action recommendation unit determines the recommended action on the basis of an action history collected from a plurality of the autonomous mobile bodies, and on the basis of a situation summary received from a target autonomous mobile body that is a target of recommendation. The information processing method includes presenting, by a processor, a recommended action recommended to an autonomous mobile body, to the autonomous mobile body that performs an action plan based on situation estimation.

Abstract: An optical filter includes a first loop mirror, a second loop mirror, a first waveguide optically coupled to the first loop mirror and the second loop mirror, a second waveguide optically coupled to the first loop mirror and the second loop mirror, a first access waveguide optically coupled to the first waveguide, a second access waveguide optically coupled to the second waveguide, and an output section, wherein the first loop mirror includes a first loop waveguide and a first multiplexer/demultiplexer, the second loop mirror includes a second loop waveguide and a second multiplexer/demultiplexer, the output section includes a third loop waveguide, a third multiplexer/demultiplexer, a third waveguide, and a fourth waveguide, the third loop waveguide optically coupled to the second loop waveguide and the third multiplexer/demultiplexer, the third waveguide and the fourth waveguide optically coupled to the third multiplexer/demultiplexer, and the output section.

Abstract: A target detecting device projects measuring light over a predetermined range in front of a vehicle, receives reflected light from a target, and detects the target or a distance to the target, based on a light reception signal output according to the light reception state. The light projecting unit includes a light emitting element emitting measuring light and light diffusion members. The light diffusion members are provided on an upper end portion and a lower end portion of a light projecting lens constituting part of a light projecting path, and diffuses, in the vertical direction, measuring light emitted from the light emitting element and traveling through the end portions in the vertical direction of the light traveling path while transmitting the measuring light.

Abstract: The light modulator includes a substrate having a main surface including a first area, a second area, and a third area, a first III-V compound semiconductor layer of a first conductivity-type provided on the first area, a second III-V compound semiconductor layer of a first conductivity-type or a second conductivity-type provided on the second area, a core provided on the third area and including a group III-V compound semiconductor, and an electrode connected to the first III-V compound semiconductor layer. The first III-V compound semiconductor layer includes a first portion having a thickness smaller than a thickness of the core in a second direction orthogonal to the main surface and a second portion having a thickness larger than the thickness of the first portion in the second direction. The second portion is disposed between the first portion and the core.

Abstract: An optical filter includes a first loop mirror, a second loop mirror, a first waveguide optically coupled to the first loop mirror and the second loop mirror, and a first access waveguide. The first loop mirror includes a first loop waveguide and a first multiplexer/demultiplexer. The second loop mirror includes a second loop waveguide and a second multiplexer/demultiplexer. The first loop waveguide is optically coupled to the first multiplexer/demultiplexer. The second loop waveguide is optically coupled to the second multiplexer/demultiplexer. The first waveguide is optically coupled to the first multiplexer/demultiplexer and the second multiplexer/demultiplexer. The first access waveguide is optically coupled to the first waveguide.

Abstract: A semiconductor device includes an electrode which is arranged on an organic material with an insulation film interposed therebetween and which does not easily peel away from the organic material along with the insulation film. An insulation film in a region including pad portions of a phase shift electrode and a modulation electrode has openings at the centers of the pad portions of the phase shift electrode and the modulation electrode, the edge portions of which are formed on the phase shift electrode and the modulation electrode. In this way, the adjoining edges of the phase shift electrode and modulation electrode and the insulation film are all covered by the insulation film so as not to be exposed to the atmosphere.

Abstract: A semiconductor optical device includes an SOI substrate having a waveguide of silicon, and at least one gain region of a group III-V compound semiconductor having an optical gain bonded to the SOI substrate. The waveguide has a bent portion and multiple linear portions extending linearly and connected to each other through the bent portion. The gain region is disposed on each of the multiple linear portions.

Abstract: A photovoltaic power generation system includes a plurality of photovoltaic cell arrays, a plurality of power conditioners connected respectively with the plurality of photovoltaic cell arrays, and a high order device connected to the plurality of power conditioners. The high order device is configured to execute: a first output control to adjust output power of a designated power conditioner to a predetermined output power amount being set in advance; and a second output control to adjust output power from a remaining power conditioner which is other than the designated power conditioner among the plurality of power conditioners. The high order device is configured to execute characteristic-data acquisition to acquire an input/output electrical characteristic of the designated power conditioner during execution of the first output control.