Patents by Inventor Naoki Ike

Naoki Ike has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8999450
    Abstract: An object of the present invention is to provide a method for manufacturing a substrate having a metal complex film on the surface thereof. According to the present invention, a metal salt-containing composition containing a metal salt, a polyvalent carboxylic acid having a cis-form structure, and a solvent, in which: the molar ratio of the polyvalent carboxylic acid to the metal salt is not less than 0.5 and not more than 4.0; the moisture content of the composition is not less than 0.05% by weight is used in an application method to apply on a substrate. Thereafter, a two-step heat treatment is carried out.
    Type: Grant
    Filed: September 28, 2009
    Date of Patent: April 7, 2015
    Assignee: Dai-Ichi Kogyo Seiyaku Co., Ltd.
    Inventors: Yasuteru Saito, Naoki Ike
  • Patent number: 8871567
    Abstract: The present invention achieves a formation of a metal oxide film of a thin film transistor with a simplified process. The present invention is concerned with a method for manufacturing a field-effect transistor comprising a gate electrode, a source electrode, a drain electrode, a channel layer and a gate insulating layer wherein the channel layer is formed by using a metal salt-containing composition comprising a metal salt, a polyvalent carboxylic acid having a cis-form structure of —C(COOH)?C(COOH)—, an organic solvent and a water wherein a molar ratio of the polyvalent carboxylic acid to the metal salt is in the range of 0.5 to 4.0.
    Type: Grant
    Filed: December 19, 2011
    Date of Patent: October 28, 2014
    Assignees: Panasonic Corporation, Dai-Ichi Kogyo Seiyaku Co., Ltd.
    Inventors: Koichi Hirano, Shingo Komatsu, Yasuteru Saito, Naoki Ike
  • Publication number: 20130032797
    Abstract: The present invention achieves a formation of a metal oxide film of a thin film transistor with a simplified process. The present invention is concerned with a method for manufacturing a field-effect transistor comprising a gate electrode, a source electrode, a drain electrode, a channel layer and a gate insulating layer wherein the channel layer is formed by using a metal salt-containing composition comprising a metal salt, a polyvalent carboxylic acid having a cis-form structure of —C(COOH)?C(COOH)—, an organic solvent and a water wherein a molar ratio of the polyvalent carboxylic acid to the metal salt is in the range of 0.5 to 4.0.
    Type: Application
    Filed: December 19, 2011
    Publication date: February 7, 2013
    Inventors: Koichi Hirano, Shingo Komatsu, Yasuteru Saito, Naoki Ike
  • Publication number: 20120230900
    Abstract: An object of the present invention is to provide a metal salt-containing composition which is applicable to many metal source materials, and can be used for forming a compact and uniform metal oxide film comparable to those formed according to a sputtering method, as well as to provide a substrate having a metal complex film on the surface thereof obtained using the metal salt-containing composition, and a substrate having a metal complex film on the surface thereof obtained by further heating the substrate. Moreover, another object of the present invention is to provide a method for manufacturing a substrate having such a metal complex film on the surface thereof. According to the present invention, a metal salt-containing composition containing a metal salt, a polyvalent carboxylic acid having a cis-form structure, and a solvent, in which: the molar ratio of the polyvalent carboxylic acid to the metal salt is not less than 0.5 and not more than 4.
    Type: Application
    Filed: September 28, 2009
    Publication date: September 13, 2012
    Applicant: Dai-Ichi Kogyo Seiyaku Co., Ltd.
    Inventors: Yasuteru Saito, Naoki Ike