Abstract: There is provided a photoelectric conversion device which can prevent the contact resistance between a non-crystalline semiconductor layer containing impurities and an electrode formed on the non-crystalline silicon layer from increasing, and can improve the element characteristics. A photoelectric conversion element (10) includes a silicon substrate (12), a first non-crystalline semiconductor layer (20n), a second non-crystalline semiconductor layer (20p), a first electrode (22n), and a second electrode (22p). One electrode (22n) includes first conductive layers (26n, 26p), and second conductive layers (28n, 28p). The first conductive layers (26n, 26p) have a first metal as a main component. The second conductive layers (28n, 28p) contain a second metal which is more likely to be oxidized than the first metal, are formed to be in contact with the first conductive layers (26n, 26p), and are disposed to be closer to the silicon substrate (12) than the first conductive layers (26n, 26p).

Abstract: There is provided a photoelectric conversion element which can prevent the contact resistance between a non-crystalline semiconductor layer containing impurities and an electrode formed on the non-crystalline semiconductor layer from increasing, and can improve the element characteristics. A photoelectric conversion element (10) includes a semiconductor substrate (12), a first semiconductor layer (20n), a second semiconductor layer (20p), a first electrode (22n), and a second electrode (22p). The first semiconductor layer (20n) has a first conductive type. The second semiconductor layer (20p) has a second conductive type opposite to the first conductive type. The first electrode (22n) is formed on the first semiconductor layer (20n). The second electrode (22p) is formed on the second semiconductor layer (20p). At least one electrode of the first electrode (22n) and the second electrode (22p) includes a plurality of metal crystal grains.

Abstract: There is provided a photoelectric conversion element which can prevent the contact resistance between a non-crystalline semiconductor layer containing impurities and an electrode formed on the non-crystalline semiconductor layer from increasing, and can improve the element characteristics. A photoelectric conversion element (10) includes a semiconductor substrate (12), a first semiconductor layer (20n), a second semiconductor layer (20p), a first electrode (22n), and a second electrode (22p). The first semiconductor layer has a first conductive type. The second semiconductor layer has a second conductive type. The first electrode is formed on the first semiconductor layer. The second electrode is formed on the second semiconductor layer. The first electrode includes a first transparent conductive layer (26n) formed on the first semiconductor layer, and a first metal layer (28n) formed on the first transparent conductive layer.

Abstract: There is provided a photoelectric conversion element which includes an n-type single crystal silicon substrate (1). The n-type single crystal silicon substrate (1) includes a central region (11) and an end-portion region (12). The central region (11) is a region which has the same central point as the central point of the n-type single crystal silicon substrate (1) and is surrounded by a circle. The diameter of the circle is set to be a length which is 40% of a length of the shortest side among four sides of the n-type single crystal silicon substrate (1). The central region (11) has a thickness t1. The end-portion region (12) is a region of being within 5 mm from an edge of the n-type single crystal silicon substrate (1). The end-portion region (12) is disposed on an outside of the central region (11) in an in-plane direction of the n-type single crystal silicon substrate (1), and has a thickness t2 which is thinner than the thickness t1.

Abstract: Provided are a solar cell module, a method of manufacturing the solar cell module, and a photovoltaic power generation system including the solar cell module. The solar cell module includes a solar cell group in which a plurality of solar cells are arranged, and a first heat storage layer that is disposed on a rear surface side of the solar cell group. The first heat storage layer is a layer that contains 80% by weight or greater of a heat storage material including a first latent heat storage material having a phase change temperature of T1. The solar cell module may further include a second heat storage layer, which includes a second latent heat storage material having a phase change temperature T2 different from the phase change temperature T1, on a rear surface side of the first heat storage layer.

Abstract: There is provided a photoelectric conversion element which includes an n-type single crystal silicon substrate (1). The n-type single crystal silicon substrate (1) includes a central region (11) and an end-portion region (12). The central region (11) is a region which has the same central point as the central point of the n-type single crystal silicon substrate (1) and is surrounded by a circle. The diameter of the circle is set to be a length which is 40% of a length of the shortest side among four sides of the n-type single crystal silicon substrate (1). The central region (11) has a thickness t1. The end-portion region (12) is a region of being within 5 mm from an edge of the n-type single crystal silicon substrate (1). The end-portion region (12) is disposed on an outside of the central region (11) in an in-plane direction of the n-type single crystal silicon substrate (1), and has a thickness t2 which is thinner than the thickness t1.

Abstract: There is provided a photoelectric conversion device which can prevent the contact resistance between a non-crystalline semiconductor layer containing impurities and an electrode formed on the non-crystalline silicon layer from increasing, and can improve the element characteristics. A photoelectric conversion element (10) includes a silicon substrate (12), a first non-crystalline semiconductor layer (20n), a second non-crystalline semiconductor layer (20p), a first electrode (22n), and a second electrode (22p). One electrode (22n) includes first conductive layers (26n, 26p), and second conductive layers (28n, 28p). The first conductive layers (26n, 26p) have a first metal as a main component. The second conductive layers (28n, 28p) contain a second metal which is more likely to be oxidized than the first metal, are formed to be in contact with the first conductive layers (26n, 26p), and are disposed to be closer to the silicon substrate (12) than the first conductive layers (26n, 26p).

Abstract: A photoelectric conversion element 100 includes an n-type monocrystalline silicon substrate 1, an non-crystalline thin film 2, i-type non-crystalline thin films 11 to 1m and 21 to 2m?1, p-type non-crystalline thin films 31 to 3m, and n-type non-crystalline thin films 41 to 4m?1. The non-crystalline thin film 2 is configured of non-crystalline thin films 201 and 202 and is disposed in contact with the surface on the light incident side of the n-type monocrystalline silicon substrate 1. The non-crystalline thin film 201 is configured of a-Si, and the non-crystalline thin film 202 is configured of a-SiNx (0.78?x?1.03). The i-type non-crystalline thin films 11 to 1m and 21 to 2m?1 are disposed in contact with the rear surface of the n-type monocrystalline silicon substrate 1. The p-type non-crystalline thin films 31 to 3m are disposed in contact with the i-type non-crystalline thin films 11 to 1m.

Abstract: A photoelectric conversion element 100 includes an n-type monocrystalline silicon substrate 1, an non-crystalline thin film 2, i-type non-crystalline thin films 11 to 1m and 21 to 2m-1, p-type non-crystalline thin films 31 to 3m, and n-type non-crystalline thin films 41 to 4m-1. The non-crystalline thin film 2 is configured of non-crystalline thin films 201 and 202 and is disposed in contact with the surface on the light incident side of the n-type monocrystalline silicon substrate 1. The non-crystalline thin film 201 is configured of a-Si, and the non-crystalline thin film 202 is configured of a-SiNx (0<x<0.85) and is disposed further on the light incident side than the non-crystalline thin film 201. The i-type non-crystalline thin films 11 to 1m and 21 to 2m-1 are disposed in contact with the rear surface of the n-type monocrystalline silicon substrate 1. The p-type non-crystalline thin films 31 to 3m are disposed in contact with the i-type non-crystalline thin films 11 to 1m.

Abstract: There is provided a photoelectric conversion element which can prevent the contact resistance between a non-crystalline semiconductor layer containing impurities and an electrode formed on the non-crystalline semiconductor layer from increasing, and can improve the element characteristics. A photoelectric conversion element (10) includes a semiconductor substrate (12), a first semiconductor layer (20n), a second semiconductor layer (20p), a first electrode (22n), and a second electrode (22p). The first semiconductor layer has a first conductive type. The second semiconductor layer has a second conductive type. The first electrode is formed on the first semiconductor layer. The second electrode is formed on the second semiconductor layer. The first electrode includes a first transparent conductive layer (26n) formed on the first semiconductor layer, and a first metal layer (28n) formed on the first transparent conductive layer.

Abstract: There is provided a photoelectric conversion element which can prevent the contact resistance between a non-crystalline semiconductor layer containing impurities and an electrode formed on the non-crystalline semiconductor layer from increasing, and can improve the element characteristics. A photoelectric conversion element (10) includes a semiconductor substrate (12), a first semiconductor layer (20n), a second semiconductor layer (20p), a first electrode (22n), and a second electrode (22p). The first semiconductor layer (20n) has a first conductive type. The second semiconductor layer (20p) has a second conductive type opposite to the first conductive type. The first electrode (22n) is formed on the first semiconductor layer (20n). The second electrode (22p) is formed on the second semiconductor layer (20p). At least one electrode of the first electrode (22n) and the second electrode (22p) includes a plurality of metal crystal grains.

Abstract: The photoelectric conversion element includes a semiconductor substrate, a first amorphous film of a first conductivity type disposed on an entire surface of one surface of the semiconductor substrate, a first conductive oxide layer disposed on the first amorphous film, a second amorphous film of the first conductivity type disposed on a part of the other surface of the semiconductor substrate, a second conductive oxide layer disposed on the second amorphous film, a third amorphous film of a second conductivity type disposed on the other part of the other surface of the semiconductor substrate, and a third conductive oxide layer disposed on the third amorphous film. Electric conductivity of the first conductive oxide layer is lower than electric conductivities of the second and the third conductive oxide layer. Transmittance of the first conductive oxide layer is higher than transmittances of the second and the third conductive oxide layer.

Abstract: The photoelectric conversion element includes a semiconductor substrate, a first amorphous film of a first conductivity type disposed on an entire surface of one surface of the semiconductor substrate, a first conductive oxide layer disposed on the first amorphous film, a second amorphous film of the first conductivity type disposed on a part of the other surface of the semiconductor substrate, a second conductive oxide layer disposed on the second amorphous film, a third amorphous film of a second conductivity type disposed on the other part of the other surface of the semiconductor substrate, and a third conductive oxide layer disposed on the third amorphous film. Electric conductivity of the first conductive oxide layer is lower than electric conductivities of the second and the third conductive oxide layer. Transmittance of the first conductive oxide layer is higher than transmittances of the second and the third conductive oxide layer.

Abstract: Provided is a photoelectric conversion element which includes a first conductive semiconductor substrate of a first conductivity type, a first semiconductor film of the first conductivity type disposed on one front surface of the semiconductor substrate, a second semiconductor film of a second conductivity type disposed on the front surface to be independent from the first semiconductor film, and a dielectric film disposed between the semiconductor substrate and the first semiconductor film and/or between the semiconductor substrate and the second semiconductor film, in which an intermetallic compound layer is formed on the first semiconductor film and on the second semiconductor film.

Abstract: A photoelectric conversion element including an i-type non-single-crystal film provided on the entire one surface of a semiconductor substrate, in which an interface between the semiconductor substrate and the i-type non-single-crystal film is flat, and a method of manufacturing the photoelectric conversion element are provided.

Abstract: A parameter setting device includes reference-format definition data for specifying setting items of a parameter regarding a first unit of a predetermined model and a predetermined version, differential-format definition data for specifying setting items of a parameter regarding a second unit of a model or a version different from the model or the version of the first unit with a difference from the reference-format definition data, a reference-data access unit and a differential-data access unit that select, when a parameter-setting target unit is the first unit, the reference-format definition data, and select, when the parameter-setting target unit is the second unit, both the reference-format definition data and the differential-format definition data, and a parameter conversion unit that interprets the parameter setting data based on the selected format definition data.

Abstract: The present invention aims to improve the photoelectric current of a dye-sensitized solar cell module and produce a high power dye-sensitized solar cell. The present invention provides a dye-sensitized solar cell module comprising at least two photoelectric conversion elements each comprising a transparent conductive layer, a porous photoelectric conversion layer adsorbing a dye, an electrolytic layer, a catalyst layer, and a conductive layer on a transparent substrate, wherein the respective photoelectric conversion elements are different in at least one among the layering order of the respective layers composing the photoelectric conversion elements; the type and composition of the materials for the respective layers; the particle diameter in the case the materials of the respective layers are granular; the thickness and width of the respective layers; the form of the respective layers; and the open circuit voltage of the photoelectric conversion elements, and thereby the aim is achieved.

Abstract: A photosensitizer attaining high incident photon-to-current conversion efficiency and having long durability life and a solar cell using the photosensitizer are provided. A solar cell 1 includes: a semiconductor electrode 10 including a substrate 18 having a conductive film 16 formed on its surface and a porous semiconductor layer 20 formed on the substrate 18; a counter electrode 12 including a substrate 30 having a conductive film 28 formed on its surface; and a carrier transport layer 14 including conductive material, posed between the semiconductor electrode 10 and the counter electrode 12. The surface of porous semiconductor layer 20 is caused to carry a light absorber 22 including inorganic material 24 carrying organic molecules 26 each having an aromatic ring.

Abstract: A photovoltaic cell having improved photoelectric conversion efficiency is provided. Furthermore, a solar cell employing such a photovoltaic cell is also provided. The photovoltaic cell is composed of a photoelectric conversion layer (31) made of a porous semiconductor layer (11) that has adsorbed a dye, a carrier transporting layer (4), and a pair of electrodes (3, 7). A total haze ratio of the porous semiconductor layer (11) of the photoelectric conversion layer (31) in a near infrared region is 60% or more to 95% or less. Especially when the porous semiconductor layer (11) is made of a plurality of layers, the haze ratio of the porous semiconductor layer in the near infrared region that is furthest from a light incident side is preferably 60% or more to 95% or less.

Abstract: The present invention aims to improve the photoelectric current of a dye-sensitized solar cell module and produce a high power dye-sensitized solar cell. The present invention provides a dye-sensitized solar cell module comprising at least two photoelectric conversion elements each comprising a transparent conductive layer, a porous photoelectric conversion layer adsorbing a dye, an electrolytic layer, a catalyst layer, and a conductive layer on a transparent substrate, wherein the respective photoelectric conversion elements are different in at least one among the layering order of the respective layers composing the photoelectric conversion elements; the type and composition of the materials for the respective layers; the particle diameter on the case the materials of the respective layers are granular; the thickness and width of the respective layers; the form of the respective layers; and the open circuit voltage of the photoelectric conversion elements, and thereby the aim is achieved.