Patents by Inventor Naoki Mihara
Naoki Mihara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240071734Abstract: There is provided a lower electrode mechanism for plasma processing, the lower electrode mechanism including: a base portion to which radio-frequency power is applied during the plasma processing; a dielectric portion disposed at an upper surface of the base portion; and an induction heating mechanism, in which the induction heating mechanism includes an induction heating element heated by an induction magnetic field, and a magnetic field generator that is disposed inside the base portion and generates the induction magnetic field.Type: ApplicationFiled: October 25, 2023Publication date: February 29, 2024Inventors: Naoki MATSUMOTO, Mitsunori OHATA, Masataka MASUYAMA, Naoki MIHARA
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Publication number: 20240055235Abstract: A substrate processing apparatus for processing a substrate includes: a processing chamber in which a processing space for the substrate is formed; a heating mechanism that adjusts an inner temperature of the processing chamber; and an inner member provided inside the processing chamber, wherein the heating mechanism includes an induction heating element that heats at least the inner member by generating heat with an induction magnetic field, and a magnetic field generator that generates the induction magnetic field.Type: ApplicationFiled: October 25, 2023Publication date: February 15, 2024Inventors: Naoki MATSUMOTO, Masataka MASUYAMA, Naoki MIHARA
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Publication number: 20230147719Abstract: A medical information processing apparatus according to an embodiment includes a processing circuitry. The processing circuitry acquires operation information of a medical worker for medical treatment information of a target patient or operation information of a medical worker for medical treatment information of a similar patient who is similar to the target patient. Based on the operation information, the processing circuitry calculates the concordance rate between a period for which the medical treatment information of the target patient or the medical treatment information of the similar patient is referred to and the period for which the medical treatment information of the target patient is displayed. The processing circuitry performs display of information about the concordance rate.Type: ApplicationFiled: October 31, 2022Publication date: May 11, 2023Applicants: CANON MEDICAL SYSTEMS CORPORATION, National Cancer CenterInventors: Yuka SHIMOMURA, Anri YAMAZAKI, Longxun PIAO, Minoru NAKATSUGAWA, Naoki MIHARA, Masami MUKAI, Noriaki NAKAJIMA
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Patent number: 11543807Abstract: A mounting state informing apparatus includes a database, an acquisition unit, a first specifying unit, a comparison unit and an output unit. The database stores information upon a mounting position and a direction of each of multiple components belonging to a processing apparatus. The acquisition unit acquires first appearance data, which is obtained by a 3D scanner, indicating a state of an appearance of the processing apparatus. The first specifying unit identifies the multiple components based on the first appearance data and specifies a mounting position and a direction of each of the identified components. The comparison unit compares the specified mounting position and the specified direction of each of the identified components with the information upon the mounting position and the direction stored in the database. The output unit is configured to output a comparison result obtained by the comparison unit.Type: GrantFiled: October 11, 2019Date of Patent: January 3, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Naoto Hayasaka, Naoki Mihara, Kouko Yumura, Junsuke Hoshiya
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Publication number: 20200117175Abstract: A mounting state informing apparatus includes a database, an acquisition unit, a first specifying unit, a comparison unit and an output unit. The database stores information upon a mounting position and a direction of each of multiple components belonging to a processing apparatus. The acquisition unit acquires first appearance data, which is obtained by a 3D scanner, indicating a state of an appearance of the processing apparatus. The first specifying unit identifies the multiple components based on the first appearance data and specifies a mounting position and a direction of each of the identified components. The comparison unit compares the specified mounting position and the specified direction of each of the identified components with the information upon the mounting position and the direction stored in the database. The output unit is configured to output a comparison result obtained by the comparison unit.Type: ApplicationFiled: October 11, 2019Publication date: April 16, 2020Inventors: Naoto Hayasaka, Naoki Mihara, Kouko Yumura, Junsuke Hoshiya
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Patent number: 10319568Abstract: A plasma processing apparatus includes a process chamber including a sidewall, a mounting table disposed in the process chamber, a shield member which is disposed along the inner surface of the sidewall to surround the mounting table and has an opening facing the transfer port, and a shutter configured to open/close the opening, the shutter being movable up and down. The shutter has a first portion adapted to face the opening, and a second portion adapted to face the shield member at a lower side of the shield member. The shield member has a lower portion including a contact surface facing the second portion. A contactor adapted to contact the contact surface is disposed at the second portion. The first portion of the shutter closes the opening through a gap between the first portion and the shield member. The contact surface and the contactor are formed of HASTELLOY®.Type: GrantFiled: October 27, 2014Date of Patent: June 11, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Ippei Shimizu, Naoki Mihara, Shunsuke Ogata
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Patent number: 10312057Abstract: A plasma processing apparatus includes a processing chamber, a table disposed in the processing chamber, a dielectric window provided at the processing chamber, and a surrounding body made of a dielectric material surrounding a processing space between the table and the dielectric window. The dielectric window and the surrounding body are separated from each other in a vertical direction with a predetermined gap therebetween.Type: GrantFiled: October 14, 2015Date of Patent: June 4, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Masayuki Kohno, Yusuke Yoshida, Naoki Matsumoto, Ippei Shimizu, Naoki Mihara, Jun Yoshikawa, Michitaka Aita, Yoshikazu Azumaya, Junsuke Hoshiya
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Patent number: 10062547Abstract: In a plasma processing apparatus for processing a substrate by plasmatizing a process gas introduced into a processing container, an introducing unit which introduces the process gas is formed on a ceiling surface of the processing container; a gas retention portion which gathers the process gas supplied from the outside of the processing container through a supply passage, and a plurality of gas ejection holes which allow communication between the gas retention portion and the inside of the processing container are formed in the introducing unit; a gas ejection hole is not formed in a location of the gas retention portion that faces an opening of the supply passage; and a cross section of each of the gas ejection holes has a flat shape.Type: GrantFiled: July 31, 2014Date of Patent: August 28, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Naoki Mihara, Naoki Matsumoto, Jun Yoshikawa, Kazuo Murakami
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Publication number: 20160126114Abstract: A plasma processing apparatus includes a processing chamber, a table disposed in the processing chamber, a dielectric window provided at the processing chamber, and a surrounding body made of a dielectric material surrounding a processing space between the table and the dielectric window. The dielectric window and the surrounding body are separated from each other in a vertical direction with a predetermined gap therebetween.Type: ApplicationFiled: October 14, 2015Publication date: May 5, 2016Applicant: TOKYO ELECTRON LIMITEDInventors: Masayuki KOHNO, Yusuke YOSHIDA, Naoki MATSUMOTO, Ippei SHIMIZU, Naoki MIHARA, Jun YOSHIKAWA, Michitaka AITA, Yoshikazu AZUMAYA, Junsuke HOSHIYA
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Patent number: 9324542Abstract: In a plasma processing apparatus of an exemplary embodiment, energy of microwaves is introduced from an antenna into the processing container through a dielectric window. The plasma processing apparatus includes a central introducing unit and a peripheral introducing unit. A central introduction port of the central introducing unit injects a gas just below the dielectric window. A plurality of peripheral introduction ports of the peripheral introducing unit injects a gas towards a periphery of the placement region. The central introducing unit is connected to with a plurality of first gas sources including a reactive gas source and a rare gas source through a plurality of first flow rate control units. The peripheral introducing unit is connected to with a plurality of second gas sources including a reactive gas source and a rare gas source through a plurality of second flow rate control units.Type: GrantFiled: September 20, 2013Date of Patent: April 26, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Naoki Matsumoto, Yugo Tomita, Naoki Mihara, Kazuki Takahashi, Michitaka Aita, Jun Yoshikawa, Takahiro Senda, Yoshiyasu Sato, Kazuyuki Kato, Kenji Sudou, Hitoshi Mizusugi
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Patent number: 9277637Abstract: An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.Type: GrantFiled: November 16, 2011Date of Patent: March 1, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Toshihisa Nozawa, Caizhong Tian, Masaru Sasaki, Naoki Mihara, Naoki Matsumoto, Kazuki Moyama, Jun Yoshikawa
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Publication number: 20150294839Abstract: Disclosed is a plasma processing apparatus including a processing container, a placing table, a central introduction section, and a peripheral introduction section. The central introduction section is provided above the placing table. The central introduction introduces a gas toward the placing table along the axis passing through a center of the placing table. The peripheral introduction section is provided between the central introduction section and a top surface of the placing table in a height direction. In addition, the peripheral introduction section is formed along a side wall. The peripheral introduction section provides a plurality of gas ejection ports arranged in a circumferential direction with respect to the axis. The plurality of gas ejection ports of the peripheral introduction section extend away from the placing table as the gas ejection ports come close to the axis.Type: ApplicationFiled: April 8, 2015Publication date: October 15, 2015Applicant: TOKYO ELECTRON LIMITEDInventors: Hiroyuki TAKABA, Tetsuya NISHIZUKA, Naoki MATSUMOTO, Michitaka AITA, Takashi MINAKAWA, Kazuki TAKAHASHI, Jun YOSHIKAWA, Motoshi FUKUDOME, Naoki MIHARA, Hiroyuki KONDO
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Patent number: 9111726Abstract: A plasma processing apparatus includes a processing chamber, a stage, a dielectric member, a microwave introduction device, an injector, and an electric field shield. The processing chamber has a processing space therein. The stage is provided within the processing chamber. The dielectric member has a through hole and is provided to face the stage. The microwave introduction device is configured to introduce microwave into the processing space via the dielectric member. The injector has at least one through hole and is made of a dielectric material, e.g., a bulk dielectric material. The injector is provided within the dielectric member. The injector and the through hole of the dielectric member form a path for supplying a processing gas into the processing space. The electric field shield encloses the injector.Type: GrantFiled: April 24, 2012Date of Patent: August 18, 2015Assignee: TOKYO ELECTRON LIMITEDInventors: Kazuki Moyama, Kiyotaka Ishibashi, Osamu Morita, Takehiro Tanikawa, Naoki Matsumoto, Naoki Mihara, Wataru Yoshikawa
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Publication number: 20150228459Abstract: In a plasma processing apparatus of an exemplary embodiment, energy of microwaves is introduced from an antenna into the processing container through a dielectric window. The plasma processing apparatus includes a central introducing unit and a peripheral introducing unit. A central introduction port of the central introducing unit injects a gas just below the dielectric window. A plurality of peripheral introduction ports of the peripheral introducing unit injects a gas towards a periphery of the placement region. The central introducing unit is connected to with a plurality of first gas sources including a reactive gas source and a rare gas source through a plurality of first flow rate control units. The peripheral introducing unit is connected to with a plurality of second gas sources including a reactive gas source and a rare gas source through a plurality of second flow rate control units.Type: ApplicationFiled: September 20, 2013Publication date: August 13, 2015Applicant: TOKYO ELECTRON LIMITEDInventors: Naoki Matsumoto, Yugo Tomita, Naoki Mihara, Kazuki Takahashi, Michitaka Aita, Jun Yoshikawa, Takahiro Senda, Yoshiyasu Sato, Kazuyuki Kato, Kenji Sudou, Hitoshi Mizusugi
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Publication number: 20150155139Abstract: A slot plate is provided at one surface of a dielectric window. The other surface of the dielectric window includes a flat surface surrounded by an annular first recess, and a plurality of second recesses formed at a bottom surface of the first recess. An antenna including the dielectric window and the slot plate provided at one surface of the dielectric window can be applied to the plasma processing apparatus.Type: ApplicationFiled: December 1, 2014Publication date: June 4, 2015Applicant: TOKYO ELECTRON LIMITEDInventors: Jun YOSHIKAWA, Naoki MATSUMOTO, Masayuki SHINTAKU, Koji KOYAMA, Naoki MIHARA, Yugo TOMITA
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Patent number: 9048070Abstract: A dielectric window for a plasma treatment device for a plasma treatment device that uses microwaves as a plasma source. The dielectric window is circular-plate-shaped and allows microwaves to propagate. The dielectric window has a recess that has an opening on the lower-surface side and that indents in the plate thickness direction of the dielectric window, and is provided to the lower surface at which plasma is generated when the dielectric window is provided to the plasma treatment device. The recess has a bottom surface extending in the direction perpendicular to the plate thickness direction, and a side surface extending in the plate thickness direction from the circumferential edge of the bottom surface toward the opening of the recess. In addition, an inclined surface extends at an incline relative to the plate thickness direction from the opening-side circumferential edge of the side surface toward the opening of the recess.Type: GrantFiled: November 8, 2012Date of Patent: June 2, 2015Assignee: TOKYO ELECTRON LIMITEDInventors: Caizhong Tian, Naoki Matsumoto, Koji Koyama, Naoki Mihara, Kazuki Takahashi, Jun Yoshikawa, Kazuki Moyama, Takehiro Tanikawa
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Publication number: 20150129129Abstract: A plasma processing apparatus includes a process chamber including a sidewall, a mounting table disposed in the process chamber, a shield member which is disposed along the inner surface of the sidewall to surround the mounting table and has an opening facing the transfer port, and a shutter configured to open/close the opening, the shutter being movable up and down. The shutter has a first portion adapted to face the opening, and a second portion adapted to face the shield member at a lower side of the shield member. The shield member has a lower portion including a contact surface facing the second portion. A contactor adapted to contact the contact surface is disposed at the second portion. The first portion of the shutter closes the opening through a gap between the first portion and the shield member. The contact surface and the contactor are formed of HASTELLOY®.Type: ApplicationFiled: October 27, 2014Publication date: May 14, 2015Applicant: TOKYO ELECTRON LIMITEDInventors: Ippei SHIMIZU, Naoki MIHARA, Shunsuke OGATA
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Patent number: 8920596Abstract: In a plasma processing apparatus for processing a substrate by plasmatizing a process gas introduced into a processing container, an introducing unit which introduces the process gas is formed on a ceiling surface of the processing container; a gas retention portion which gathers the process gas supplied from the outside of the processing container through a supply passage, and a plurality of gas ejection holes which allow communication between the gas retention portion and the inside of the processing container are formed in the introducing unit; a gas ejection hole is not formed in a location of the gas retention portion that faces an opening of the supply passage; and a cross section of each of the gas ejection holes has a flat shape.Type: GrantFiled: August 25, 2010Date of Patent: December 30, 2014Assignee: Tokyo Electron LimitedInventors: Naoki Mihara, Naoki Matsumoto, Jun Yoshikawa, Kazuo Murakami
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Publication number: 20140338602Abstract: In a plasma processing apparatus for processing a substrate by plasmatizing a process gas introduced into a processing container, an introducing unit which introduces the process gas is formed on a ceiling surface of the processing container; a gas retention portion which gathers the process gas supplied from the outside of the processing container through a supply passage, and a plurality of gas ejection holes which allow communication between the gas retention portion and the inside of the processing container are formed in the introducing unit; a gas ejection hole is not formed in a location of the gas retention portion that faces an opening of the supply passage; and a cross section of each of the gas ejection holes has a flat shape.Type: ApplicationFiled: July 31, 2014Publication date: November 20, 2014Inventors: Naoki MIHARA, Naoki MATSUMOTO, Jun YOSHIKAWA, Kazuo MURAKAMI
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Publication number: 20140312767Abstract: A dielectric window for a plasma treatment device for a plasma treatment device that uses microwaves as a plasma source. The dielectric window is circular-plate-shaped and allows microwaves to propagate. The dielectric window has a recess that has an opening on the lower-surface side and that indents in the plate thickness direction of the dielectric window, and is provided to the lower surface at which plasma is generated when the dielectric window is provided to the plasma treatment device. The recess has a bottom surface extending in the direction perpendicular to the plate thickness direction, and a side surface extending in the plate thickness direction from the circumferential edge of the bottom surface toward the opening of the recess. In addition, an inclined surface extends at an incline relative to the plate thickness direction from the opening-side circumferential edge of the side surface toward the opening of the recess.Type: ApplicationFiled: November 8, 2012Publication date: October 23, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Caizhong Tian, Naoki Matsumoto, Koji Koyama, Naoki Mihara, Kazuki Takahashi, Jun Yoshikawa, Kazuki Moyama, Takehiro Tanikawa