Abstract: A semiconductor device includes: a plurality of trench portions provided in a semiconductor substrate; a mesa portion provided between the plurality of trench portions in the semiconductor substrate; and a front surface metal layer provided above the semiconductor substrate, wherein each of the plurality of trench portions has: a gate trench portion including a gate conductive portion and a gate dielectric film; and a dummy trench portion including a dummy conductive portion and a dummy dielectric film, and the front surface metal layer has: an upper region in contact with an upper surface of the mesa portion in direct contact with the dummy trench portion; and an embedded region that is embedded in the semiconductor substrate and is in contact with a side wall of the mesa portion and the dummy conductive portion.

Abstract: An automotive laminated glass includes a thermoplastic interlayer film, a curved first glass sheet, and a curved second glass sheet. The thermoplastic interlayer film is disposed between the first and second glass sheets. The first glass sheet is a 0.7- to 3-mm thick non-chemically strengthened glass sheet including a convex-side first main surface and a concave-side second main surface facing the thermoplastic interlayer film. The second glass sheet is an ion-exchanged, 0.3- to 1.5-mm thick chemically strengthened glass sheet including a convex-side third main surface facing the thermoplastic interlayer film and a concave-side fourth main surface. The second glass sheet is thinner than the first glass sheet, and is adjusted to have a curvature equal to the curvature of the first glass sheet. A compressive stress layer on the concave-side fourth main surface is thicker than a compressive stress layer on the convex-side third main surface.

Abstract: An automotive laminated glass includes a thermoplastic interlayer film, a curved first glass sheet, and a curved second glass sheet. The thermoplastic interlayer film is disposed between the first and second glass sheets. The first glass sheet is a 0.7- to 3-mm thick non-chemically strengthened glass sheet including a convex-side first main surface and a concave-side second main surface facing the thermoplastic interlayer film. The second glass sheet is an ion-exchanged, 0.3- to 1.5-mm thick chemically strengthened glass sheet including a convex-side third main surface facing the thermoplastic interlayer film and a concave-side fourth main surface. The second glass sheet is thinner than the first glass sheet. The convex-side third main surface has a compressive stress layer thicker than that on the concave-side fourth main surface, and the second glass sheet is adjusted to fit the curvature of the first glass sheet.

Abstract: Disclosed is a laminated glass for an automotive vehicle in which a curved first (exterior-side) glass sheet and a curved second (interior-side) glass sheet are opposed to each other with a thermoplastic intermediate film interposed therebetween, wherein a difference in annealing point temperature between the first and second glass sheets is in the range of ±5° C., wherein a difference in softening point temperature between the first and second glass sheets is in the range of ±5° C., wherein the first glass sheet has a glass composition with a FeO content of 0.1 mass % to 0.5 mass %, wherein the second glass sheet has a glass composition with a FeO content of 0 mass % to 0.05 mass %, wherein a thickness of the second glass sheet is 0.5 mm to 1.8 mm, and wherein a thickness of the first glass sheet is 1.1 times to 1.4 times the thickness of the second glass sheet.

Abstract: An automotive laminated glass includes a thermoplastic interlayer film, a curved first glass sheet, and a curved second glass sheet. The thermoplastic interlayer film is disposed between the first and second glass sheets. The first glass sheet is a 0.7- to 3-mm thick non-chemically strengthened glass sheet including a convex-side first main surface and a concave-side second main surface facing the thermoplastic interlayer film. The second glass sheet is an ion-exchanged, 0.3- to 1.5-mm thick chemically strengthened glass sheet including a convex-side third main surface facing the thermoplastic interlayer film and a concave-side fourth main surface. The second glass sheet is thinner than the first glass sheet. The convex-side third main surface has a compressive stress layer thicker than that on the concave-side fourth main surface, and the second glass sheet is adjusted to fit the curvature of the first glass sheet.

Abstract: An automotive laminated glass includes a thermoplastic interlayer film, a curved first glass sheet, and a curved second glass sheet. The thermoplastic interlayer film is disposed between the first and second glass sheets. The first glass sheet is a 0.7- to 3-mm thick non-chemically strengthened glass sheet including a convex-side first main surface and a concave-side second main surface facing the thermoplastic interlayer film. The second glass sheet is an ion-exchanged, 0.3- to 1.5-mm thick chemically strengthened glass sheet including a convex-side third main surface facing the thermoplastic interlayer film and a concave-side fourth main surface. The second glass sheet is thinner than the first glass sheet, and is adjusted to have a curvature equal to the curvature of the first glass sheet. A compressive stress layer on the concave-side fourth main surface is thicker than a compressive stress layer on the convex-side third main surface.

Abstract: A semiconductor device includes a semiconductor substrate having a drift region of a first conductivity type; a base region of a second conductivity type in the semiconductor substrate; an emitter region of the first conductivity type in the semiconductor substrate; a first gate trench portion that is formed in the upper surface of the semiconductor substrate and is in contact with the emitter region and the base region; a second gate trench portion formed in the upper surface of the semiconductor substrate; a first electrical element electrically connected to the first gate trench portion; and a second electrical element electrically connected to the second gate trench portion, wherein a time constant of an RC circuit constituted by the second electrical element and the second gate trench portion is greater than a time constant of an RC circuit constituted by the first electrical element and the first gate trench portion.

Abstract: A semiconductor device includes: a first conductivity type drift region having crystal defects generated by electron-beam irradiation; a first main electrode region of a first conductivity type arranged in the drift region and having an impurity concentration higher than that of the drift region; and a second main electrode region of a second conductivity type arranged in the drift region to be separated from the first main electrode region, wherein the crystal defects contain a first composite defect implemented by a vacancy and oxygen and a second composite defect implemented by carbon and oxygen, and a density of the crystal defects is set so that a peak signal intensity of a level of the first composite defect identified by a deep-level transient spectroscopy measurement is five times or more than a peak signal intensity of a level of the second composite defect.

Abstract: A semiconductor device includes a semiconductor substrate having a drift region of a first conductivity type; a base region of a second conductivity type in the semiconductor substrate; an emitter region of the first conductivity type in the semiconductor substrate; a first gate trench portion that is formed in the upper surface of the semiconductor substrate and is in contact with the emitter region and the base region; a second gate trench portion formed in the upper surface of the semiconductor substrate; a first electrical element electrically connected to the first gate trench portion; and a second electrical element electrically connected to the second gate trench portion, wherein a time constant of an RC circuit constituted by the second electrical element and the second gate trench portion is greater than a time constant of an RC circuit constituted by the first electrical element and the first gate trench portion.

Abstract: A trench insulated gate bipolar transistor includes trenches formed in the front surface of a first conductivity type drift layer, a plurality of gate electrodes selectively provided inside the trenches, insulating blocks formed of an insulator, with which the insides of the trenches are filled, one between adjacent gate electrodes, and a second conductivity type collector region formed on a surface of the first conductivity type drift layer on the opposite side from the trenches.

Abstract: A semiconductor device includes: a first conductivity type drift region having crystal defects generated by electron-beam irradiation; a first main electrode region of a first conductivity type arranged in the drift region and having an impurity concentration higher than that of the drift region; and a second main electrode region of a second conductivity type arranged in the drift region to be separated from the first main electrode region, wherein the crystal defects contain a first composite defect implemented by a vacancy and oxygen and a second composite defect implemented by carbon and oxygen, and a density of the crystal defects is set so that a peak signal intensity of a level of the first composite defect identified by a deep-level transient spectroscopy measurement is five times or more than a peak signal intensity of a level of the second composite defect.

Abstract: A trench insulated gate bipolar transistor includes trenches formed in the front surface of a first conductivity type drift layer, a plurality of gate electrodes selectively provided inside the trenches, insulating blocks formed of an insulator, with which the insides of the trenches are filled, one between adjacent gate electrodes, and a second conductivity type collector region formed on a surface of the first conductivity type drift layer on the opposite side from the trenches.

Abstract: Disclosed is an ultraviolet and infrared absorptive glass characterized by that its coloring component contains, based on mass of the ultraviolet and infrared absorptive glass, 0.05-0.9 mass % of CeO2, 0.50-1.20 mass % of of total iron oxide in terms of Fe2O3, 0.08-0.30 mass % of FeO, 0.1-1.5 mass % of TiO2, 10-25 mass ppm of CoO, and 0.1-50 mass ppm of Cr2O3, that mass ratio (Fe2+/Fe3+) of divalent iron to trivalent iron is 0.20-0.45, and that dominant wavelength measured by using illuminant D65 of JIS Z 8701 is 510-560 nm. This glass has satisfactory optical characteristics, even though the content of CeO2 has been reduced.

Abstract: The present invention aims to provide a chemically strengthened glass plate which has a good yield in a cutting process of the chemically strengthened glass plate and has sufficient strength. The chemically strengthened glass plate has a surface compressive stress of not less than 600 MPa at a surface of the chemically strengthened glass plate, and a compressive stress layer containing two types of stress patterns A and B. The stress pattern A is a stress pattern of a surface portion of the glass plate, and the stress pattern B is a stress pattern of an inside of the glass plate. The stress patterns satisfy the formula SA>SB where SA represents a slope of the stress pattern A and SB represents a slope of the stress pattern B when the stress patterns A and B are each approximated by a linear function.

Abstract: The present invention aims to provide a chemically strengthened glass with cutting easiness and a higher compressive residual stress than the conventional one, made of soda-lime glass. The chemically strengthened glass of the present invention is a chemically strengthened glass manufactured by ion exchange of a surface layer of a glass article to replace alkali metal ions A which are the largest in amount among all the alkali metal ion components of the glass article with alkali metal ions B having a larger ionic radius than the alkali metal ions A, wherein the glass article before the ion exchange is made of soda-lime glass substantially composed of SiO2: 65 to 75%, Na2O+K2O: 5 to 20%, CaO: 2 to 15%, MgO: 0 to 10%, and Al2O3: 0 to 5% on a mass basis, the chemically strengthened glass after the ion exchange has a surface compressive stress of 600 to 900 MPa, and has a compressive stress layer with a depth of 5 to 20 ?m at a surface of the glass.

Abstract: The present invention aims to provide a chemically strengthened glass plate which has a good yield in a cutting process of the chemically strengthened glass plate and has sufficient strength. The chemically strengthened glass plate has a surface compressive stress of not less than 600 MPa at a surface of the chemically strengthened glass plate, and a compressive stress layer containing two types of stress patterns A and B. The stress pattern A is a stress pattern of a surface portion of the glass plate, and the stress pattern B is a stress pattern of an inside of the glass plate. The stress patterns satisfy the formula SA>SB where SA represents a slope of the stress pattern A and SB represents a slope of the stress pattern B when the stress patterns A and B are each approximated by a linear function.

Abstract: The present invention aims to provide a cover glass for display devices, made of soda-lime glass, excellent in cutting easiness and reliability of surface strength. The cover glass for display devices of the present invention includes a chemically strengthened glass, and has a compressive stress layer having a depth of 6 to 15 ?m. In the cover glass, a shape parameter determined in accordance with JIS R 1625 (1996) based on analysis of a facture stress of the cover glass measured by a coaxial double ring test is not less than 7, and strength of the cover glass when a cumulative fracture probability is 1% is not less than 450 MPa. The glass plate before the ion exchange is made of soda-lime glass.

Abstract: Disclosed is an ultraviolet and infrared absorptive glass characterized by that its coloring component contains, based on mass of the ultraviolet and infrared absorptive glass, 0.05-0.9 mass % of CeO2, 0.50-1.20 mass % of of total iron oxide in terms of Fe2O3, 0.08-0.30 mass % of FeO, 0.1-1.5 mass % of TiO2, 10-25 mass ppm of CoO, and 0.1-50 mass ppm of Cr2O3, that mass ratio (Fe2+/Fe3+) of divalent iron to trivalent iron is 0.20-0.45, and that dominant wavelength measured by using illuminant D65 of JIS Z 8701 is 510-560 nm. This glass has satisfactory optical characteristics, even though the content of CeO2 has been reduced.

Abstract: Disclosed is a glass composition including 60 to 70% by mass of SiO2, 0.5 to 3.0% by mass of Al2O3, 2 to 8% by mass of Na2O, 5 to 15% by mass of K2O, 8 to 13% by mass of MgO, 0 to 5% by mass of CaO, 0 to 8% by mass of SrO and 0.5 to 5% by mass of ZrO2, and substantially excluding BaO and B2O3, wherein a total amount of Na2O and K2O is 8 to 18% by mass, and a total amount of MgO, CaO and SrO is 10 to 22% by mass.