Abstract: Provided is a fan control apparatus which includes: a first sensor; a second sensor; an RF fan; and a controller. The first sensor is provided in a first room, and is configured to acquire a measured value of at least one condition selected from conditions of atmospheric pressure, temperature, and humidity for the first room, the second sensor is provided in a second room adjacent to the first room, and is configured to acquire a measured value of the same condition as the at least one selected condition for the second room, the RF fan is placed at a boundary between the first and second rooms, and the controller is configured to control a rotational speed and rotational direction of the RF fan in such a manner that the measured values of the first and second sensors are the same.

Abstract: To provide a piezoelectric body film and a piezoelectric element from which an excellent piezoelectric characteristic can be obtained even in a high-temperature environment and a method for manufacturing a piezoelectric element. A piezoelectric body film of the present invention is a piezoelectric body film containing a perovskite-type oxide represented by Formula (1), in which a content q of Nb with respect to the number of all atoms in the perovskite-type oxide and a ratio r of a diffraction peak intensity from a (200) plane to a diffraction peak intensity from a (100) plane of the perovskite-type oxide, which is measured using an X-ray diffraction method, satisfy Formula (2), Formula (1) A1+?[(ZryTi1-y)1-xNbx]O2, Formula (2) 0.35?r/q<0.

Abstract: In the piezoelectric film including a perovskite oxide which is represented by General Formula P, 0.1?x?0.3 and 0<y?0.49x are satisfied, A1+?[(Zr,Ti)1-x-yNbxScy]Oz . . . General Formula P, in General Formula P, A is an A-site element primarily containing Pb, ?=0 and z=3 are standard values, but ? and z may deviate from standard values in a range in which a perovskite structure is capable of being obtained.

Abstract: In the piezoelectric film including a perovskite oxide which is represented by General Formula P, 0.1?x?0.3 and 0<y?0.49x are satisfied, A1+?[(Zr,Ti)1-x-yNbxScy]Oz . . . General Formula P, in General Formula P, A is an A-site element primarily containing Pb, ?=0 and z=3 are standard values, but ? and z may deviate from standard values in a range in which a perovskite structure is capable of being obtained.

Abstract: Provided is a piezoelectric film that has a perovskite structure preferentially oriented to a (100) plane and that comprises a composite oxide represented by the following compositional formula: Pba[(ZrxTi1-x)1-yNby]bO3 wherein 0<x<1, and 0.10?y<0.13, in which in a case where a ratio I(200)/I(100) of a diffraction peak intensity I(200) from a perovskite (200) plane with respect to a diffraction peak intensity I(100) from a perovskite (100) plane, as measured by an X-ray diffraction method, is r, and a/b is q, 0.28r+0.9?q?0.32r+0.95, 1.10?q?1.25, and r?1.00 are satisfied.

Abstract: The piezoelectric film includes a perovskite oxide which is represented by General Formula P, A1+?B1-x-yNbxNiyOz??General Formula P where A contains at least Pb, B contains at least Zr and Ti, and x and y respectively satisfy 0.1?x?0.3 and 0?y?0.75x. Although standard values of ? and z are ?=0 and z=3, these values may deviate from the standard values in a range in which a perovskite structure is capable of being obtained.

Abstract: A cooling fan automatic control system includes: a temperature sensor configured to measure a temperature of an object to be cooled; a plurality of current sensors configured to measure power consumption by each of a plurality of cooling fans; and a controller which, when a measured temperature that is a measured value obtained by the temperature sensor is higher than a target cooling temperature of the object to be cooled, controls rotational speeds of the plurality of cooling fans so as to minimize a total of measured current values of the plurality of cooling fans obtained by the plurality of current sensors.

Abstract: Provided is a piezoelectric film formed by a vapor phase growth method, the piezoelectric film containing: a perovskite oxide in which a perovskite oxide represented by the following formula P is doped with Si in an amount of from 0.2 mol % to less than 0.5 mol %, wherein a ratio of a peak intensity of a pyrochlore phase to a sum of peak intensities in respective plane orientations of (100), (001), (110), (101) and (111) of a perovskite phase measured by an X-ray diffraction method is 0.25 or less: A1+?[(ZrxTi1?x)1?aNba]Oy??Formula P wherein, in formula P, A is an A-site element primarily containing Pb; Zr, Ti, and Nb are B-site elements; x is more than 0 but less than 1; a is 0.1 or more but less than 0.3.

Abstract: The piezoelectric film includes a perovskite oxide which is represented by General Formula P, A1+?B1-x-yNbxNiyOz??General Formula P where A contains at least Pb, B contains at least Zr and Ti, and x and y respectively satisfy 0.1?x?0.3 and 0?y?0.75x. Although standard values of ? and z are ?=0 and z=3, these values may deviate from the standard values in a range in which a perovskite structure is capable of being obtained.

Abstract: A piezoelectric film of the present invention is a piezoelectric film including a perovskite oxide represented by the following formula (P), in which crystal phases of the perovskite oxide include tetragonal crystals and rhombohedral crystals at a ratio that satisfies the following formula (1). A1+?[(ZrxTi1?x)1?aNba]Oy??(P) 0.70?rhombohedral crystals/(rhombohedral crystals+tetragonal crystals)?0.95?? (1), where, in the formula (P), A is an A-site element primarily containing Pb, and Zr, Ti, and Nb are B-site elements. x is equal to or higher than 0.4 and lower than 1, excluding x of equal to or higher than 0.51 and equal to or lower than 0.53. a is equal to or higher than 0.08.

Abstract: Provided are an electroacoustic transduction film capable of reproducing a sound with a sufficient sound volume at a high conversion efficiency, a manufacturing method thereof, an electroacoustic transducer, a flexible display, a vocal cord microphone, and a sensor for a musical instrument.

Abstract: Provided is a piezoelectric film formed by a vapor phase growth method, the piezoelectric film containing: a perovskite oxide in which a perovskite oxide represented by the following formula P is doped with Si in an amount of from 0.2 mol % to less than 0.5 mol %, wherein a ratio of a peak intensity of a pyrochlore phase to a sum of peak intensities in respective plane orientations of (100), (001), (110), (101) and (111) of a perovskite phase measured by an X-ray diffraction method is 0.25 or less: A1+?[(ZrxTi1?a)1?aNba]Oy??Formula P wherein, in formula P, A is an A-site element primarily containing Pb; Zr, Ti, and Nb are B-site elements; x is more than 0 but less than 1; a is 0.1 or more but less than 0.3.

Abstract: A piezoelectric film of the present invention is a piezoelectric film including a perovskite oxide represented by the following formula (P), in which crystal phases of the perovskite oxide include tetragonal crystals and rhombohedral crystals at a ratio that satisfies the following formula (1). A1+?[(ZrxTi1-x)1-aNba]Oy??(P) 0.70?rhombohedral crystals/(rhombohedral crystals+tetragonal crystals)?0.95?? (1), where, in the formula (P), A is an A-site element primarily containing Pb, and Zr, Ti, and Nb are B-site elements. x is equal to or higher than 0.4 and lower than 1, excluding x of equal to or higher than 0.51 and equal to or lower than 0.53. a is equal to or higher than 0.08.

Abstract: A photoelectric conversion device, which includes, on a substrate, a layered structure of a conductive layer formed by a transition metal element, a photoelectric conversion layer formed by a compound semiconductor containing a group Ib element, a group IIIb element and a group VIb element, and a transparent electrode, further includes a transition metal dichalcogenide thin film formed by the transition metal element and the group VIb element between the conductive layer and the photoelectric conversion layer. 80% or less of lot of crystallites forming the transition metal dichalcogenide thin film and occupying the surface of the conductive layer, on which the thin film is formed, have the c-axes thereof oriented substantially perpendicular to the surface of the conductive layer.

Abstract: An emergency notification in-vehicle terminal mountable to a vehicle is disclosed. The in-vehicle terminal is configured to transmit emergency information to a center in response to detection of an occurrence of an emergency situation involving the vehicle. The in-vehicle terminal determines, in response to the detection of the occurrence of the emergency situation, whether the emergency notification in-vehicle terminal is operating by an electric power of a back-up battery. If it is determined that the emergency notification in-vehicle terminal is operating by the electric power of the back-up battery, the in-vehicle terminal transmits a minimum necessary amount of the emergency information to the center.

Abstract: A solar cell of a module type in which thin-film solar cells having a light absorbing layer made of a compound semiconductor are joined in series on a single substrate. The substrate includes a base made of a ferritic stainless steel, an aluminum layer formed on at least one surface of the base, and an insulation layer having a porous structure obtained by anodizing a surface of the aluminum layer. The insulation layer exhibits compressive stress at room temperature.

Abstract: A mass-spectrometry apparatus includes a substrate for mass spectrometry used in surface-assisted laser desorption/ionization mass spectrometry, a light irradiation means that irradiates sample S in contact with a surface of the substrate with measurement light L1 to desorb analyte R in sample S from the surface, a metal probe that generates near-field light at the leading end thereof by irradiation with measurement light L1, a detector that detects desorbed analyte Ri, and an analysis means that performs mass spectrometry on analyte R based on a detection result by the detector. The leading end of the metal probe is arranged in such a manner that the near-field light generated by irradiation with measurement light L1 is in contact with a measurement light irradiation portion of sample S. The metal probe is arranged, with respect to the measurement light irradiation portion, at a position different from the direction of the detector.

Abstract: In a device for mass spectrometry, an analyte contained in a sample is desorbed from a surface of the device by irradiating the sample in contact with the surface with measurement light. The device includes a micro-structure having a plurality of metal bodies on a surface of a substrate, and the plurality of metal bodies have sizes that can excite localized plasmons by irradiation with the measurement light. Further, the device includes an initiator fixed at least to a part of a surface of the micro-structure.

Abstract: A method of measuring Raman signals comprises: an analyte placing step of placing an analyte on a detection surface of a microstructure plate which generates an enhanced electric field when irradiated with excitation light; an irradiating step of irradiating the detection surface with the excitation light so that the enhanced electric field is generated around the detection surface and light is emitted from the analyte and the detection surface to be enhanced by the generated enhanced electric field; a Raman signal obtaining step of detecting the enhanced light to obtain a Raman signal emitted from the analyte and a background signal for use as a reference, the Raman signal and the background signal having respective intensities; and a normalizing step of normalizing the Raman signal from the analyte by dividing the intensity of the Raman signal from the analyte by the intensity of the background signal obtained as the reference.

Abstract: An emergency notification in-vehicle terminal mountable to a vehicle is disclosed. The in-vehicle terminal is configured to transmit emergency information to a center in response to detection of an occurrence of an emergency situation involving the vehicle. The in-vehicle terminal determines, in response to the detection of the occurrence of the emergency situation, whether the emergency notification in-vehicle terminal is operating by an electric power of a back-up battery. If it is determined that the emergency notification in-vehicle terminal is operating by the electric power of the back-up battery, the in-vehicle terminal transmits a minimum necessary amount of the emergency information to the center.